STP3NC70ZFP [STMICROELECTRONICS]

N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH⑩III MOSFET; N沟道700V - 4.1ohm - 2.5A TO- 220 / TO- 220FP齐纳保护PowerMESH⑩III MOSFET


型号：	STP3NC70ZFP
厂家：	ST
描述：	N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH⑩III MOSFET N沟道700V - 4.1ohm - 2.5A TO- 220 / TO- 220FP齐纳保护PowerMESH⑩III MOSFET
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中文：	中文翻译
下载：	下载PDF数据表文档文件

STP3NC70Z

STP3NC70ZFP

N-CHANNEL 700V - 4.1Ω - 2.5A TO-220/TO-220FP

Zener-Protected PowerMESH™III MOSFET

TYPE

DSS

DS(on)

STP3NC70Z

STP3NC70ZFP

700V

< 4.7Ω

2.5 A

■

TYPICAL R (on) = 4.1Ω

EXTREMELY HIGH dv/dt AND CAPABILITY

GATE TO - SOURCE ZENER DIODES

100% AVALANCHE TESTED

VERY LOW GATE INPUT RESISTANCE

GATE CHARGE MINIMIZED

■

TO-220

TO-220FP

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrat-

ing back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capa-

bility with higher ruggedness performance as re-

quested by a large variety of single-switch

applications.

APPLICATIONS

■

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

■

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP3NC70Z

STP3NC70ZFP

Drain-source Voltage (V = 0)

700

± 25

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

2.5

1.6

2.5 (*)

1.6 (*)

Drain Current (continuos) at T = 100°C

(●)

Drain Current (pulsed)

TOT

Total Dissipation at T = 25°C

Derating Factor

0.52

0.28

W/°C

V/ns

Gate-source Current (DC)

±50

1.5

Gate source ESD(HBM-C=100pF, R=1.5KΩ)

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

ESD(G-S)

dv/dt (1)

2500

ISO

stg

–65 to 150

150

°C

Max. Operating Junction Temperature

°C

(1) I ≤2.5A, di/dt ≤100A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX

(•)Pulse width limited by safe operating area

June 2001

1/10

(*) Limited by Maximum Temperature allowed

STP3NC70Z/STP3NC70ZFP

THERMAL DATA

TO-220

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

1.92

3.57

°C/W

°C

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

300

Maximum Lead Temperature For Soldering Purpose

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

2.5

(pulse width limited by T max)

Single Pulse Avalanche Energy

150

(starting T = 25 °C, I = I , V = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Drain-source

Breakdown Voltage

Test Conditions

= 250 µA, V = 0

Min.

Typ.

Max.

Unit

700

(BR)DSS

∆BV

/∆T Breakdown Voltage Temp.

= 1 mA, V = 0

0.8

V/°C

DSS

Coefficient

Zero Gate Voltage

= Max Rating

µA

DSS

Drain Current (V = 0)

= Max Rating, T = 125 °C

Gate-body Leakage

= ±20V

±10

GSS

Current (V = 0)

ON (1)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

GS(th)

= V , I = 250µA

Gate Threshold Voltage

Static Drain-source On

Resistance

= 10V, I = 1.25 A

4.1

4.7

Ω

DS(on)

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

(1)

Forward Transconductance

> I

D(on)

x R

DS(on)max,

= 1.25A

V = 25V, f = 1 MHz, V = 0

DS GS

Input Capacitance

Output Capacitance

530

iss

oss

Reverse Transfer

Capacitance

rss

2/10

STP3NC70Z/STP3NC70ZFP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

= 350 V, I = 1.25 A

Turn-on Delay Time

d(on)

= 4.7Ω V = 10V

Rise Time

(see test circuit, Figure 3)

= 560V, I = 2.5A,

= 10V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SWITCHING OFF

Symbol

Parameter

Off-voltage Rise Time

Fall Time

Test Conditions

Min.

Typ.

Max.

Unit

= 560V, I = 2.5 A,

r(Voff)

= 4.7Ω, V = 10V

(see test circuit, Figure 5)

Cross-over Time

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

2.5

Unit

Source-drain Current

(2)

(1)

Source-drain Current (pulsed)

Forward On Voltage

SDM

= 2.5 A, V = 0

1.6

= 2.5 A, di/dt = 100A/µs,

= 27V, T = 150°C

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

175

0.6

7.5

µC

RRM

(see test circuit, Figure 5)

GATE-SOURCE ZENER DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

GSO

-4

αT

Voltage Thermal Coefficient

Dynamic Resistance

T=25°C Note(3)

1.3

10 /°C

= 50 mA, V = 0

Ω

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. ∆V = αT (25°-T) BV

(25°)

GSO

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally

be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient

and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid

the usage of external components.

3/10

STP3NC70Z/STP3NC70ZFP

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

Thermal Impedance for TO-220

Thermal Impedance for TO-220FP

Output Characteristics

Transfer Characteristics

4/10

STP3NC70Z/STP3NC70ZFP

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

Normalized Gate Threshold Voltage vs Temp.

Normalized On Resistance vs Temperature

5/10

STP3NC70Z/STP3NC70ZFP

Source-drain Diode Forward Characteristics

6/10

STP3NC70Z/STP3NC70ZFP

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For

Fig. 4: Gate Charge test Circuit

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

7/10

STP3NC70Z/STP3NC70ZFP

TO-220 MECHANICAL DATA

inch

TYP.

DIM.

MIN.

TYP.

MAX.

4.60

1.32

2.72

MIN.

0.173

0.048

0.094

MAX.

0.181

0.051

0.107

4.40

1.23

2.40

1.27

0.050

0.49

0.61

1.14

4.95

2.4

0.70

0.88

1.70

5.15

2.7

0.019

0.024

0.044

0.194

0.094

0.393

0.027

0.034

0.067

0.203

0.106

0.409

DIA.

10.0

10.40

16.4

0.645

13.0

2.65

15.25

6.2

14.0

2.95

15.75

6.6

0.511

0.104

0.600

0.244

0.137

0.147

0.551

0.116

0.620

0.260

0.154

0.151

3.5

3.93

3.85

3.75

Dia.

P011C

8/10

STP3NC70Z/STP3NC70ZFP

TO-220FP MECHANICAL DATA

mm.

inch

DIM.

MIN.

4.4

TYP

MAX.

4.6

2.7

2.75

0.7

MIN.

0.173

0.098

0.017

0.030

0.045

0.195

0.094

0.393

TYP.

MAX.

0.181

0.106

0.108

0.027

0.039

0.067

0.204

0.106

0.409

2.5

0.45

0.75

1.15

4.95

2.4

1.7

5.2

2.7

10.4

0.630

28.6

9.8

2.9

15.9

30.6

10.6

3.6

1.126

.0385

0.114

0.626

0.354

0.118

1.204

0.417

0.141

0.645

0.366

0.126

16.4

9.3

3.2

1 2

9/10

STP3NC70Z/STP3NC70ZFP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is

granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are

subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products

are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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10/10

STP3NC70ZFP [STMICROELECTRONICS]

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