STP3NC90Z-1 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 90V V(BR)DSS | 3.5A I(D) | TO-262AA ; 晶体管| MOSFET | N沟道| 90V V（ BR ） DSS | 3.5AI （D ） | TO- 262AA\n
| 型号： | STP3NC90Z-1 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 90V V(BR)DSS | 3.5A I(D) | TO-262AA
|
| 文件： | 总11页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP3NC90Z - STP3NC90ZFP
STB3NC90Z-1
N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK
Zener-Protected PowerMESH III MOSFET
TYPE
V
R
DS(on)
I
D
DSS
STP3NC90Z/FP
STB3NC90Z-1
900V
900V
< 3.5Ω
< 3.5Ω
3.5 A
3.5 A
■
■
TYPICAL R (on) = 3.2Ω
DS
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
3
2
1
TO-220
TO-220FP
■
■
■
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
3
2
1
I2PAK
(Tabless TO-220)
DESCRIPTION
The third generation of MESH OVERLAY
Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
■
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP(B)3NC90Z(-1) STP3NC90ZFP
V
Drain-source Voltage (V
= 0)
GS
900
900
± 25
V
V
DS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuos) at T = 25°C
3.5
2.2
14
3.5(*)
2.2(*)
14
A
D
C
I
Drain Current (continuos) at T = 100°C
A
D
C
I
( )
●
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
100
0.8
35
W
TOT
C
Derating Factor
0.28
W/°C
mA
KV
V/ns
V
I
Gate-source Current (*)
±50
2.5
3
GS
V
Gate source ESD(HBM-C=100pF, R=15KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
ESD(G-S)
dv/dt
V
--
2000
ISO
T
–65 to 150
150
°C
°C
stg
T
Max. Operating Junction Temperature
j
(1)I ≤3.5A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
j JMAX
(•)Pulse width limited by safe operating area
SD
DD
(BR)DSS
(*) Limited only by maximum temperature allowed
.
January 2001
1/11
STP3NC90Z/FP/STB3NC90Z-1
THERMAL DATA
TO-220 / I2PAK
TO-220FP
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
1.25
3.57
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
62
0.1
300
T
l
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
3.5
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
220
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
Test Conditions
= 250 µA, V = 0
Min.
Typ.
Max.
Unit
V
I
I
900
V
(BR)DSS
D
D
GS
∆BV
/∆T Breakdown Voltage Temp.
= 1 mA, V = 0
1
V/°C
DSS
J
GS
Coefficient
I
V
V
V
= Max Rating
DS
1
µA
µA
µA
DSS
Zero Gate Voltage
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
I
Gate-body Leakage
= ±20V
±10
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
4
Max.
5
Unit
V
V
GS(th)
DS(on)
Gate Threshold Voltage
V
V
= V , I = 250µA
3
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 1.75 A
3.2
3.5
Ω
D
I
On State Drain Current
V
V
> I
= 10V
x R
DS(on)max,
3.5
A
D(on)
DS
GS
D(on)
DYNAMIC
Symbol
Parameter
Test Conditions
x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
> I
3
S
DS
D(on)
I
= 1.75A
D
C
C
V
= 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
1250
78
pF
pF
iss
oss
Reverse Transfer
Capacitance
C
rss
7
pF
2/11
STP3NC90Z/FP/STB3NC90Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
= 450 V, I = 1.5 A
28
ns
Turn-on Delay Time
d(on)
DD
D
R
= 4.7Ω V
= 10V
GS
G
t
14
ns
r
Rise Time
(see test circuit, Figure 3)
Q
V
V
= 720V, I = 3A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
27
8
38
nC
nC
nC
g
DD
GS
D
Q
Q
gs
gd
10
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
16
Max.
Unit
ns
t
V
R
= 720V, I = 3 A,
r(Voff)
DD
D
= 4.7Ω, V = 10V
G
GS
t
10
ns
f
(see test circuit, Figure 5)
t
Cross-over Time
18
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
3.5
14
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
A
SDM
V
I
I
= 3 A, V
= 0
GS
1.6
V
SD
SD
SD
t
= 3 A, di/dt = 100A/µs,
= 100V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
712
4450
13
ns
µC
A
rr
V
DD
j
Q
rr
RRM
(see test circuit, Figure 5)
I
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
25
V
GSO
-4
αT
Rz
Voltage Thermal Coefficient
Dynamic Resistance
T=25°C Note(3)
1.3
90
10 /°C
I
= 50 mA
Ω
D
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V = α T (25°-T) BV
(25°)
GSO
BV
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/11
STP3NC90Z/FP/STB3NC90Z-1
Safe Operating Area For TO-220 / I PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220 / I PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/11
STP3NC90Z/FP/STB3NC90Z-1
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/11
STP3NC90Z/FP/STB3NC90Z-1
Source-drain Diode Forward Characteristics
6/11
STP3NC90Z/FP/STB3NC90Z-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/11
STP3NC90Z/FP/STB3NC90Z-1
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
4.40
1.23
2.40
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
8/11
STP3NC90Z/FP/STB3NC90Z-1
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L2
L4
9/11
STP3NC90Z/FP/STB3NC90Z-1
2
TO-262 (I PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
10/11
STP3NC90Z/FP/STB3NC90Z-1
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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11/11
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