STP3NC50 [STMICROELECTRONICS]
N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh⑩II MOSFET; N沟道500V - 3ohm - 2.8A TO- 220 MOSFET PowerMesh⑩II
| 型号： | STP3NC50 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh⑩II MOSFET |
| 文件： | 总8页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP3NC50
N-CHANNEL 500V - 3Ω - 2.8A TO-220
PowerMesh™II MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STP3NC50
500 V
< 4 Ω
2.8 A
■
■
■
■
■
TYPICAL R (on) = 3 Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
3
2
DESCRIPTION
1
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
500
500
±30
2.8
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
Drain-gate Voltage (R = 20 kΩ)
V
DGR
GS
V
GS
Gate- source Voltage
V
I
D
Drain Current (continuos) at T = 25°C
A
C
I
Drain Current (continuos) at T = 100°C
1.8
A
D
C
I
(1)
Drain Current (pulsed)
11.2
75
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
0.6
3
W/°C
V/ns
°C
dv/dt
Peak Diode Recovery voltage slope
Storage Temperature
T
stg
–60 to 150
150
T
Max. Operating Junction Temperature
°C
j
(1)I ≤ 2.8A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
(BR)DSS j JMAX
SD
DD
(•)Pulse width limited by safe operating area
.
May 2001
1/8
STP3NC50
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
1.67
62.5
300
°C/W
°C/W
°C
Rthj-amb
Thermal Resistance Junction-ambient Max
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
2.8
A
AR
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
110
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
500
(BR)DSS
GS
V
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
I
Gate-body Leakage
= ±30V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V
GS(th)
V
V
= V , I = 250µA
Gate Threshold Voltage
2
3
3
4
4
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 1.4 A
Ω
DS(on)
GS
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
2
S
I
D
= 1.4A
C
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
260
45
pF
pF
iss
oss
Reverse Transfer
Capacitance
C
rss
5
pF
2/8
STP3NC50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 250V, I = 1.4 A
= 4.7Ω V = 10V
GS
10
10
ns
ns
Turn-on Delay Time
Rise Time
d(on)
DD
D
t
r
G
(see test circuit, Figure 3)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 400V, I = 2.8 A,
= 10V
10
2.5
4.5
13.5
nC
nC
nC
g
DD
D
Q
gs
Q
gd
GS
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
V
R
= 400V, I = 2.8 A,
Off-voltage Rise Time
Fall Time
Cross-over Time
10
8
20
ns
ns
ns
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10V
GS
(see test circuit, Figure 5)
G
t
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
2.8
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
11.2
1.6
A
SDM
V
I
I
= 2.8 A, V = 0
V
SD
SD
GS
t
= 2.8A, di/dt = 100A/µs,
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
380
2200
11.5
ns
nC
A
rr
SD
V
= 100V, Tj = 150°C
DD
Q
rr
(see test circuit, Figure 5)
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/8
STP3NC50
Transfer Characteristics
Output Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STP3NC50
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STP3NC50
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STP3NC50
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
A
C
0.181
0.051
0.107
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/8
STP3NC50
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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8/8
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