STP3NC60 [STMICROELECTRONICS]
N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET; N沟道600V - 3.3ohm - 3A TO- 220 / TO- 220FP PowerMeshII MOSFET
| 型号： | STP3NC60 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET |
| 文件： | 总9页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP3NC60
STP3NC60FP
- 3A TO-220/TO-220FP
N-CHANNEL 600V - 3.3
Ω
PowerMesh II MOSFET
TYPE
STP3NC60
V
R
I
D
DSS
DS(on)
600 V
600V
<3.6 Ω
<3.6 Ω
3 A
2 A
STP3NC60FP
■
■
■
■
■
TYPICAL R (on) = 3.3 Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
3
3
2
2
1
1
TO-220FP
TO-220
DESCRIPTION
The PowerMESH II is the evolution of the first
generation of MESH OVERLAY . The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP3NC60
STP3NC60FP
V
Drain-source Voltage (V
= 0)
GS
600
600
±30
V
V
DS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuos) at T = 25°C
3
1.9
12
3
A
D
C
I
Drain Current (continuos) at T = 100°C
1.9(*)
12(*)
40
A
D
C
I
(●)
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
80
W
TOT
C
Derating Factor
0.64
0.32
W/°C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
3.5
V
-
2000
ISO
T
stg
–60 to 150
150
°C
°C
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area
(1)I ≤3A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
(BR)DSS j JMAX.
SD
DD
(*)Limited only by maximum temperature allowed
May 2000
1/9
STP3NC60/FP
THERMAL DATA
TO-220
TO-220FP
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
1.56
3.12
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
62.5
0.5
T
l
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
Avalanche Current, Repetitive or Not-Repetitive
I
3
A
AR
(pulse width limited by T max)
j
Single Pulse Avalanche Energy
E
100
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 250 µA, V = 0
600
V
(BR)DSS
D
GS
V
V
= Max Rating
1
µA
µA
DS
Zero Gate Voltage
I
DSS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
Gate-body Leakage
I
V
= ±30V
±100
nA
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
V
V
= V , I = 250µA
Gate Threshold Voltage
2
GS(th)
DS
GS
GS
D
= 10V, I = 1.5 A
3.3
3.6
Ω
D
Static Drain-source On
Resistance
R
DS(on)
V
V
> I
= 10V
x R
DS
GS
D(on) DS(on)max,
I
On State Drain Current
3
A
D(on)
DYNAMIC
Symbol
Parameter
Test Conditions
> I x R
D(on)
= 1.5A
Min.
Typ.
Max.
Unit
V
DS
DS(on)max,
g
fs
(1)
Forward Transconductance
2
S
I
D
C
Input Capacitance
Output Capacitance
400
57
pF
pF
iss
C
oss
V
= 25V, f = 1 MHz, V = 0
GS
DS
Reverse Transfer
Capacitance
C
rss
7
pF
2/9
STP3NC60/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 300 V, I = 1.5 A
9
ns
d(on)
DD
D
Turn-on Delay Time
Rise Time
= 4.7Ω V
= 10 V
GS
G
t
13
ns
r
(see test circuit, Figure 3)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
13
2.3
4.4
18.2
nC
nC
nC
g
V
V
= 480V, I = 3 A,
= 10V
DD
GS
D
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
13
Max.
Unit
ns
t
r(Voff)
V
R
= 480V, I = 3 A,
DD
D
t
= 4.7Ω, V = 10V
15
ns
f
G
GS
(see test circuit, Figure 5)
t
Cross-over Time
21
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
3
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
12
A
SDM
V
I
I
= 3 A, V
= 0
GS
1.6
V
SD
SD
SD
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
420
1.5
7.1
ns
µC
A
rr
= 3 A, di/dt = 100A/µs, V
DD
Q
= 100V, T = 150°C
(see test circuit, Figure 5)
rr
RRM
j
I
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP3NC60/FP
Thermal Impedence for TO-220
Thermal Impedence for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP3NC60/FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP3NC60/FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP3NC60/FP
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP3NC60/FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L2
L4
8/9
STP3NC60/FP
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9/9
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