STP3NB80 [SUNTAC]
POWER MOSFET; 功率MOSFET
| 型号： | STP3NB80 |
| 厂家： | 
SUNTAC ELECTRONIC CORP. |
| 描述： | POWER MOSFET |
| 文件： | 总4页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP3NB80
POWER MOSFET
!
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to
withstand high energy in the avalanche mode and switch
efficiently. This new high energy device also offers a
'ꢀ Higher Current Rating
'ꢀ Lower Rds(on)
'ꢀ Lower Capacitances
drain-to-source diode with fast recovery time. Designed for 'ꢀ Lower Total Gate Charge
high voltage, high speed switching applications such as
power supplies, converters, power motor controls and
bridge circuits.
'ꢀ Tighter VSD Specifications
'ꢀ Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO- TO-220FP
Top View
D
G
S
2
3
1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current ꢀ Continuous
ꢀ Pulsed
Symbol
ID
Value
3.0
12
Unit
A
IDM
Gate-to-Source Voltage ꢀ Continue
ꢀ Non-repetitive
VGS
30
V
V
VGSM
40
Total Power Dissipation
PD
35
W
Derate above 25R
0.28
W/R
Operating and Storage Temperature Range
TJ, TSTG
EAS
-65 to 150
176
......R
Single Pulse Drain-to-Source Avalanche Energy ꢀ TJ = 25R
(VDD = 50V, VGS = 10V, ID = 3A, L = 10mH, RG = 25ꢀ)
Thermal Resistance ꢀ Junction to Case
mJ
%
1.70
62
R/W
JC
ꢀ Junction to Ambient
%
JA
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
TL
.300
R
Page 1
STP3NB80
POWER MOSFET
!
ORDERING INFORMATION
Part Number
Package
TO-220 Full Package
STP3NB80
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25 к .
STP3NB80
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
800
V
V(BR)DSS
(VGS = 0 V, ID = 250 µA)
Drain-Source Leakage Current
(VDS =800 V , VGS = 0 V )
µA
nA
nA
V
IDSS
IGSS
1
Gate-body Leakage Current
(VGS = ±30 V, VDS = 0 V)
̈́100
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
-100
5.0
IGSSR
Gate Threshold Voltage
3.0
1.5
VGS(th)
RDS(on)
(VDS = VGS, ID = 250 µA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.5A) *
mhos
S
2.5
4.0
Forward Transconductance (VDS = ID(ON) X RDS(ON)max , ID = 1.5 A) *
Input Capacitance
gFS
Ciss
Coss
Crss
445
580
pF
pF
(VDS = 25 V, VGS = 0 V,
Output Capacitance
60
7
80
9
f = 1.0 MHz)
pF
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
12
10
17
14
40
20
24
ns
ns
td(on)
tr
td(off)
tf
(VDD = 400 V, ID = 1.5 A,
VGS = 10 V,
ns
ns
Turn-Off Delay Time
Fall Time
19
RG = 4.7ȍ) *
10
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
17
nC
nC
Qg
Qgs
Qgd
LD
(VDS = 640 V, ID = 3.0 A,
VGS = 10 V)*
6.5
7.5
4.5
nC
nH
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
7.5
nH
LS
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
1.6
V
ns
ns
VSD
ton
trr
(ISD = 3.0 A,
Forward Turn-On Time
**
dIS/dt = 100A/µs)
Reverse Recovery Time
650
* Pulse Test: Pulse Width !300µs, Duty Cycle !2%
** Negligible, Dominated by circuit inductance
Page 2
STP3NB80
POWER MOSFET
!
Thermal Impedance forTO-220FP
Safe Operating Area for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Page 3
STP3NB80
POWER MOSFET
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Page 4
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