STP3NB100FP [STMICROELECTRONICS]
N - CHANNEL 1000V - 5.3 ohm - 3 A - TO-220/TO-220FP PowerMESH MOSFET; N - CHANNEL 1000V - 5.3欧姆 - 3 A - TO- 220 / TO- 220FP的PowerMESH MOSFET型号: | STP3NB100FP |
厂家: | ST |
描述: | N - CHANNEL 1000V - 5.3 ohm - 3 A - TO-220/TO-220FP PowerMESH MOSFET |
文件: | 总6页 (文件大小:48K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STP3NB100
STP3NB100FP
N - CHANNEL 1000V - 5.3
Ω
- 3 A - TO-220/TO-220FP
PowerMESH
MOSFET
TARGET DATA
TYPE
VDSS
RDS(on)
ID
STP3NB100
STP3NB100FP
1000 V
1000 V
< 6 Ω
< 6
Ω
3 A
3 A
■
■
■
■
■
TYPICAL RDS(on) = 5.3
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
3
2
1
2
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP3NB100 STP3NB100FP
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
1000
1000
± 30
V
V
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
V
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
3
3(**)
1.1
A
ID
1.9
12
A
IDM (• )
Ptot
12
A
Total Dissipation at Tc = 25 oC
100
0.8
4.5
35
W
Derating Factor
0.28
4.5
W/oC
V/ns
V
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
2000
-65 to 150
150
oC
oC
Max. Operating Junction Temperature
•
≤
3
Α,
≤
µ
≤ ≤
V(BR)DSS, Tj TJMAX
( ) Pulse width limited by safe operating area
( 1) ISD
di/dt 200 A/ s, VDD
(**) Limitedonly by TMAX
1/6
October 1998
STP3NB100/FP
THERMAL DATA
TO-220
TO220-FP
Rthj-case Thermal Resistance Junction-case
Max
1.25
3.57
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
3
A
EAS
Single Pulse Avalanche Energy
244
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
1000
V
ID = 250 µA VGS = 0
IDSS
IGSS
VDS = Max Rating
1
50
A
µ
µA
o
Tc = 125 C
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS
=
30 V
±
ON ( )
Symbol
Parameter
Test Conditions
VDS = VGS ID = 250
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
3
4
5
V
A
µ
RDS(on)
ID(on)
Static Drain-source On VGS = 10V ID = 1.5 A
Resistance
5.3
6
Ω
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
3
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.5 A
Min.
Typ.
Max.
Unit
gfs ( )
1.5
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
700
80
4
pF
pF
pF
2/6
STP3NB100/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
VDD = 500 V ID = 1.5 A
RG = 4.7 Ω VGS = 10 V
Min.
Typ.
Max.
Unit
td(on)
tr
TBD
ns
ns
Rise Time
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 800 V ID = 3 A VGS = 10 V
21
8
9
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 800V ID = 3 A
RG = 4.7 Ω VGS = 10 V
TBD
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
3
12
A
A
VSD ( ) Forward On Voltage
ISD = 3 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
TBD
ns
ISD = 3 A di/dt = 100 A/ s
VDD = 100 V
µ
Tj = 150 oC
Qrr
Reverse Recovery
C
µ
Charge
IRRM
Reverse Recovery
Current
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
STP3NB100/FP
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
4/6
STP3NB100/FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
5/6
STP3NB100/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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