STGP14HF60KD [STMICROELECTRONICS]
25A, 600V, N-CHANNEL IGBT, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN;型号: | STGP14HF60KD |
厂家: | ST |
描述: | 25A, 600V, N-CHANNEL IGBT, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN 局域网 栅 双极性晶体管 功率控制 |
文件: | 总12页 (文件大小:406K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STGF14HF60KD
STGP14HF60KD
14 A - 600 V - short-circuit rugged IGBT
Preliminary data
Features
■ Low on-voltage drop (V
)
CE(sat)
■ Operating junction temperature up to 175 °C
■ Low C / C ratio (no cross conduction
res
ies
susceptibility)
■ Tight parameter distribution
■ Ultrafast soft-recovery antiparallel diode
■ Short-circuit rugged
3
3
2
2
1
1
TO-220
TO-220FP
Applications
■ Motor drives
■ High frequency inverters
■ SMPS and PFC in both hard switch and
Figure 1.
Internal schematic diagram
resonant topologies
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Table 1.
Device summary
Order codes
Marking
Package
TO-220FP
TO-220
Packaging
STGF14HF60KD
STGP14HF60KD
GF14HF60KD
GP14HF60KD
Tube
Tube
August 2009
Doc ID 16118 Rev 1
1/12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
12
Contents
STGF14HF60KD, STGP14HF60KD
Contents
1
2
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 16118 Rev 1
STGF14HF60KD, STGP14HF60KD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
TO-220
TO-220FP
VCES
Collector-emitter voltage (VGE = 0)
Collector current (continuous) at TC = 25 °C
Collector current (continuous) at TC = 100 °C
Turn-off latching current
600
V
A
A
A
A
V
A
(1)
IC
25
14
11
7
(1)
IC
(2)
ICL
50
50
20
20
(3)
ICP
Pulsed collector current
VGE
IF
Gate-emitter voltage
Diode RMS forward current at TC = 25 °C
Surge non repetitive forward current tp = 10 ms
sinusoidal
IFSM
55
A
V
Isolations withstand voltage (RMS) from all three
leads to external hea sink
VISO
--
2500
33
( t=1 s; TC = 25 °C)
PTOT
tscw
Tj
Total dissipation at TC = 25 °C
95
W
µs
°C
Short-circuit withstand time, VCE = 0.5V(BR)CES
,
5
– 40 to 175
TC = 125 °C, RG = 10 Ω, VGE = 12 V
Operating junction temperature
1. Calculated according to the iterative formula:
T
j(max) – TC
IC(TC) = ----------------------------------------------------------------------------------------------------------
Rthj – c × VCE(sat)(max)(Tj(max), IC(TC))
2. Vclamp = 80% of VCES, Tj =175 °C, RG=10 Ω, VGE=15 V
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220
TO-220FP
Rthj-case Thermal resistance junction-case IGBT
Rthj-case Thermal resistance junction-case diode
Rthj-amb Thermal resistance junction-ambient
1.58
2.2
4.55
5.6
°C/W
°C/W
°C/W
62.5
Doc ID 16118 Rev 1
3/12
Electrical characteristics
STGF14HF60KD, STGP14HF60KD
2
Electrical characteristics
(T = 25 °C unless otherwise specified)
j
Table 4.
Symbol
Static
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter breakdown
voltage (VGE= 0)
V(BR)CES
IC= 1 mA
600
V
VGE= 15 V, IC= 7 A
2.1
1.8
V
V
Collector-emitter saturation
voltage
VCE(sat)
VGE= 15 V, IC= 7 A, Tj = 150 °C
VGE(th) Gate threshold voltage
VCE= VGE, IC= 250 µA
4.5
6.5
V
Gate-emitter leakage
IGES
VGE= 20 V, Tj = 150 °C
100 nA
150 µA
current (VCE = 0)
Collector cut-off current
VCE= 600 V
ICES
(VGE = 0)
VCE= 600 V, Tj = 150 °C
1
mA
(1)
gfs
Forward transconductance VCE = 15 V , IC = 7 A
3
S
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Cies
Coes
Cres
TBD
TBD
TBD
pF
pF
pF
Output capacitance
VCE = 25 V, f = 1 MHz, VGE= 0
-
-
-
-
Reverse transfer
capacitance
Qg
Qge
Qgc
Total gate charge
VCE = 390 V, IC = 7 A,
VGE = 15 V
TBD
TBD
TBD
nC
nC
nC
Gate-emitter charge
Gate-collector charge
(see Figure 3)
4/12
Doc ID 16118 Rev 1
STGF14HF60KD, STGP14HF60KD
Electrical characteristics
Min. Typ. Max. Unit
Table 6.
Symbol
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
(di/dt)on Turn-on current slope
Test conditions
td(on)
tr
VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15 V,
(see Figure 2)
TBD
TBD
TBD
ns
ns
-
-
-
-
-
-
-
-
A/µs
VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15 V,
Tj = 150 °C
td(on)
tr
Turn-on delay time
Current rise time
TBD
TBD
TBD
ns
ns
(di/dt)on Turn-on current slope
A/µs
(see Figure 2)
tr(Voff) Off voltage rise time
TBD
TBD
TBD
ns
ns
ns
VCC = 390 V, IC = 7 A,
td(off
tf
)
Turn-off delay time
Current fall time
RGE = 10 Ω, VGE = 15 V
(see Figure 2)
VCC = 390 V, IC = 7 A,
RGE = 10 Ω, VGE = 15 V
Tj = 150 °C
tr(Voff) Off voltage rise time
TBD
TBD
TBD
ns
ns
ns
td(off
tf
)
Turn-off delay time
Current fall time
(see Figure 2)
Table 7.
Symbol
Switching energy (inductive load)
Parameter
Test conditions
Min Typ. Max Unit
Eon (1)
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15 V,
(see Figure 2)
TBD
TBD
TBD
µJ
µJ
µJ
(2)
Eoff
-
-
-
-
Ets
VCC = 390 V, IC = 7 A
Eon (1)
Turn-on switching losses
Turn-off switching losses
Total switching losses
TBD
TBD
TBD
µJ
µJ
µJ
RG= 10 Ω, VGE= 15 V,
Tj = 150 °C
(2)
Eoff
Ets
(see Figure 2)
1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and DIODE are at the same
temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current.
Doc ID 16118 Rev 1
5/12
Electrical characteristics
STGF14HF60KD, STGP14HF60KD
Table 8.
Symbol
Collector-emitter diode
Parameter
Test conditions
Min Typ. Max Unit
IF = 7 A
1.8
1.2
2.1
V
V
VF
Forward on-voltage
-
-
IF = 7 A, Tj = 150 °C
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 7 A, VR = 40 V,
di/dt = 100 A/µs
(see Figure 5)
37
40
ns
nC
A
Qrr
Irrm
2.2
IF = 7 A, VR = 40 V,
Tj = 150 °C,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
123
220
3.6
ns
nC
A
Qrr
Irrm
-
di/dt = 100 A/µs
(see Figure 5)
6/12
Doc ID 16118 Rev 1
STGF14HF60KD, STGP14HF60KD
Test circuits
3
Test circuits
Figure 2.
Test circuit for inductive load
switching
Figure 3.
Gate charge test circuit
AM01504v1
AM01505v1
Figure 4.
Switching waveforms
Figure 5.
Diode recovery times waveform
Qrr
90%
10%
di/dt
VG
IF
trr
90%
10%
ta
tb
VCE
Tr(Voff)
Tcross
t
90%
10%
IRRM
IRRM
IC
Td(off)
Toff
Td(on)
Ton
Tf
Tr(Ion)
VF
di/dt
AM01506v1
AM01507v1
Doc ID 16118 Rev 1
7/12
Package mechanical data
STGF14HF60KD, STGP14HF60KD
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
8/12
Doc ID 16118 Rev 1
STGF14HF60KD, STGP14HF60KD
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
2.75
0.7
1
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.70
1.5
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_J
Doc ID 16118 Rev 1
9/12
Package mechanical data
STGF14HF60KD, STGP14HF60KD
TO-220 type A mechanical data
mm
Typ
Dim
Min
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
3.85
2.95
2.65
0015988_Rev_S
10/12
Doc ID 16118 Rev 1
STGF14HF60KD, STGP14HF60KD
Revision history
5
Revision history
Table 9.
Date
17-Aug-2009
Document revision history
Revision
Changes
1
Initial release.
Doc ID 16118 Rev 1
11/12
STGF14HF60KD, STGP14HF60KD
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2009 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
12/12
Doc ID 16118 Rev 1
相关型号:
STGP14NC60KD
N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明