STGP19NC60S [STMICROELECTRONICS]
N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT; N沟道600V - 20A - TO- 220中频的PowerMESH IGBT
| 型号： | STGP19NC60S |
| 厂家： | 
ST |
| 描述： | N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT |
| 文件： | 总14页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGP19NC60S
N-channel 600V - 20A - TO-220
Medium frequency PowerMESH™ IGBT
Features
VCE(sat)
(typ)@150°C
< 1.35V
IC
VCES
Type
@100°C
STGP19NC60S 600V
20A
■ Very low on-voltage drop (V
)
CE(sat)
3
2
1
■ High input impedance (voltage driven)
TO-220
■ IGBT co-packaged with ultrafast freewheeling
diode.
■ Minimum power losses at 5 kHz in hard
switching
■ Optimized performance for medium operating
frequencies.
Figure 1.
Internal schematic diagram
Application
■ Medium frequency motor control
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Table 1.
Device summary
Order code
STGP19NC60S
Marking
Package
TO-220
Packaging
GP19NC60S
Tube
September 2007
Rev 3
1/14
www.st.com
Contents
STGP19NC60S
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/14
STGP19NC60S
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
600
50
Unit
V
VCES
Collector-emitter voltage (VGS = 0)
(1)
Collector current (continuous) at TC = 25°C
Collector current (continuous) at TC = 100°C
A
IC
(1)
20
A
IC
(2)
Pulsed collector current
80
20
A
V
ICP
VGE
PTOT
Tj
Gate-emitter voltage
Total dissipation at TC = 25°C
125
W
Operating junction temperature
– 55 to 150
°C
1. Calculated according to the iterative formula:
T
– T
JMAX
C
I
(T ) = ------------------------------------------------------------------------------------------------------
C
C
R
× V
(T , I )
C C
THJ – C
CESAT(MAX)
2. Pulsed: width limited by max junction temperature allowed
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max IGBT
Rthj -amb Thermal resistance junction-ambient max
1
°C/W
°C/W
62.5
3/14
Electrical characteristics
STGP19NC60S
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
Static
Parameter
Test conditions
IC= 1mA, VGE= 0
VGE= 15V, IC= 12A
Min. Typ. Max. Unit
Collector-emitter
breakdown voltage
VBR(CES)
600
V
1.55
1.35
1.9
V
V
Collector-emitter saturation
voltage
VCE(sat)
VGE(th)
ICES
VGE= 15V, IC=12A,Tc=150°C
VCE= VGE, IC= 250 µA
Gate threshold voltage
3.75
5.75
V
VCE= Max rating,TC= 25°C
VCE= Max rating,TC= 150°C
Collector cut-off current
(VGE = 0)
150
1
µA
mA
Gate-emitter leakage
current (VCE = 0)
IGES
gfs
VGE= 20V, VCE= 0
100
nA
S
VCE = 15V I = 12A
Forward transconductance
10
, C
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Cies
Coes
Cres
1190
135
pF
pF
pF
VCE = 25V, f = 1MHz,
VGE = 0
Output capacitance
Reverse transfer
capacitance
28.5
VCE = 480V, IC = 12A,
VGE = 15V,
Qg
Qge
Qgc
Total gate charge
54.5
8.7
nC
nC
nC
Gate-emitter charge
Gate-collector charge
25.8
Figure 17
4/14
STGP19NC60S
Electrical characteristics
Min. Typ. Max. Unit
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Figure 18
Turn-on delay time
Current rise time
17.5
6.2
ns
ns
Turn-on current slope
1870
A/µs
(di/dt)on
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Tj = 125°C
td(on)
tr
Turn-on delay time
Current rise time
17
6.5
ns
ns
Turn-on current slope
1700
A/µs
(di/dt)on
Figure 18
tr(Voff)
td(Voff)
tf
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Figure 18
Off voltage rise time
Turn-off delay time
Current fall time
90
ns
ns
ns
175
215
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Tj = 125°C
tr(Voff)
td(Voff)
tf
Off voltage rise time
Turn-off delay time
Current fall time
155
245
290
ns
ns
ns
Figure 18
Table 6.
Symbol
Switching energy (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
Eon
VCC = 480V, IC = 12A
RG= 10Ω, VGE= 15V,
Figure 16
Turn-on switching losses
Turn-off switching losses
Total switching losses
135
815
995
µJ
µJ
µJ
(1)
Eoff
Ets
V
CC = 480V, IC = 12A
Eon
Turn-on switching losses
Turn-off switching losses
Total switching losses
200
1175
1375
µJ
µJ
µJ
RG= 10Ω, VGE= 15V,
Tj = 125°C
(1)
Eoff
Ets
Figure 16
1. Turn-off losses include also the tail of the collector current
5/14
Electrical characteristics
STGP19NC60S
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
Transfer characteristics
Figure 3.
Figure 5.
6/14
Transconductance
Figure 4.
Collector-emitter on voltage vs
temperature
Gate charge vs gate-source voltage Figure 6.
Capacitance variations
STGP19NC60S
Electrical characteristics
Figure 7.
Normalized gate threshold voltage Figure 8.
vs temperature
Collector-emitter on voltage vs
collector current
Figure 9.
Normalized breakdown voltage vs Figure 10. Switching losses vs temperature
temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
current
7/14
Electrical characteristics
Figure 13. Turn-off SOA
STGP19NC60S
Figure 14. Thermal impedance
Figure 15. I vs. frequency
C
8/14
STGP19NC60S
Electrical characteristics
2.2
Frequency applications
For a fast IGBT suitable for high frequency applications, the typical collector current vs.
maximum operating frequency curve is reported. That frequency is defined as follows:
f
= (P - P ) / (E + E
)
OFF
MAX
D
C
ON
●
The maximum power dissipation is limited by maximum junction to case thermal
resistance:
Equation 1
P = ∆T / R
D
THJ-C
considering ∆T = T - T = 125 °C- 75 °C = 50°C
J
C
●
The conduction losses are:
Equation 2
P = I * V * δ
CE(SAT)
C
C
with 50% of duty cycle, V
typical value @125°C.
CESAT
●
Power dissipation during ON & OFF commutations is due to the switching frequency:
Equation 3
= (E + E ) * freq.
OFF
P
SW
ON
Typical values @ 125°C for switching losses are used (test conditions: V = 480V,
CE
V
=15V, R = 10 Ohm). Furthermore, diode recovery energy is included in the E (see
GE
G ON
Note 1), while the tail of the collector current is included in the E
measurements.
OFF
9/14
Test circuit
STGP19NC60S
3
Test circuit
Figure 16. Test circuit for inductive load
switching
Figure 17. Gate charge test circuit
Figure 18. Switching waveform
Figure 19. Diode recovery time waveform
10/14
STGP19NC60S
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/14
Package mechanical data
STGP19NC60S
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.49
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
12/14
STGP19NC60S
Revision history
5
Revision history
Table 7.
Date
Document revision history
Revision
Changes
02-Jul-2007
13-Aug-2007
18-Sep-2007
1
2
3
First release
From target to preliminary version
Added new section: Electrical characteristics (curves)
13/14
STGP19NC60S
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14/14
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