STGP19NC60W [STMICROELECTRONICS]
N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT; N沟道600V - 19A - TO- 220超高速的PowerMESH IGBT
| 型号： | STGP19NC60W |
| 厂家： | 
ST |
| 描述： | N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT |
| 文件： | 总13页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGP19NC60W
N-channel 600V - 19A - TO-220
Ultra fast PowerMESH™ IGBT
PRELIMINARY DATA
Features
VCE(sat)
(max)@25°C
< 2.5V
IC
VCES
Type
@100°C
STGP19NC60W
600V
22A
■ High frequency operation
■ Low C / C ratio (no cross-conduction
3
2
1
RES
IES
susceptbility)
TO-220
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “W” identifies a family
optimized for very high frequency application.
Internal schematic diagram
Applications
■ High frequency motor controls, inverters, UPS
■ HF, SMPS and PFC in both hard switch and
resonant topologies
Order code
Part number
Marking
Package
Packaging
STGP19NC60W
GP19NC60W
TO-220
Tube
May 2007
Rev 2
1/13
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
13
Contents
STGP19NC60W
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STGP19NC60W
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
600
40
Unit
V
VCES
Collector-emitter voltage (VGS = 0)
(1)
Collector current (continuous) at TC = 25°C
Collector current (continuous) at TC = 100°C
A
IC
(1)
22
A
IC
(2)
Collector current (pulsed)
35
20
A
V
ICL
VGE
PTOT
Tstg
Tj
Gate-emitter voltage
Total dissipation at TC = 25°C
125
W
Storage temperature
– 55 to 150
°C
Operating junction temperature
1. Calculated according to the iterative formula::
T
– T
JMAX
C
I
(T ) = ------------------------------------------------------------------------------------------------------
C
C
R
× V
(T , I )
C C
THJ – C
CESAT(MAX)
2. Vclamp=480V, Tj=150°C, RG=10Ω, VGE=15V
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
1
°C/W
°C/W
62.5
3/13
Electrical characteristics
STGP19NC60W
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
Static
Parameter
Test conditions
IC= 1mA, VGE= 0
VGE= 15V, IC= 12A
Min. Typ. Max. Unit
Collector-emitter
breakdown voltage
VBR(CES)
600
V
2.1
1.8
2.5
V
V
Collector-emitter saturation
voltage
VCE(sat)
VGE(th)
ICES
VGE= 15V, IC=12A,Tc=125°C
VCE= VGE, IC= 250 µA
Gate threshold voltage
3.75
5.75
V
VCE= Max rating,TC= 25°C
VCE= Max rating,TC= 125°C
Collector cut-off current
(VGE = 0)
150
1
µA
mA
Gate-emitter leakage
current (VCE = 0)
IGES
gfs
VGE= 20V , VCE= 0
100
nA
S
VCE = 15V IC= 12A
Forward transconductance
10
,
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Cies
Coes
Cres
1180
130
26
pF
pF
pF
VCE = 25V, f = 1MHz,
VGE = 0
Output capacitance
Reverse transfer
capacitance
Qg
Qge
Qgc
V
CE = 390V, IC = 5A,
Total gate charge
53
10
21
nC
nC
nC
Gate-emitter charge
Gate-collector charge
VGE = 15V,
(See figure 15)
4/13
STGP19NC60W
Electrical characteristics
Min. Typ. Max. Unit
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
VCC = 390V, IC = 12A
RG= 10Ω, VGE= 15V,
(See figure 16)
Turn-on delay time
Current rise time
25
7
ns
ns
Turn-on current slope
1600
A/µs
(di/dt)on
VCC = 390V, IC = 12A
td(on)
tr
Turn-on delay time
Current rise time
25
8
ns
ns
RG= 10Ω, VGE= 15V,
Tj = 125°C
Turn-on current slope
1400
A/µs
(di/dt)on
(See figure 16)
tr(Voff)
VCC = 390V, IC = 12A
RG= 10Ω, VGE= 15V,
(See figure 16)
Off voltage rise time
Turn-off delay time
Current fall time
22
90
43
ns
ns
ns
td(off
tf
)
VCC = 390V, IC = 12A
tr(Voff)
td(off
tf
Off voltage rise time
Turn-off delay time
Current fall time
47
127
77
ns
ns
ns
RG= 10Ω, VGE= 15V,
)
Tj = 125°C
(See figure 16)
Table 6.
Symbol
Switching energy (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
Eon
VCC = 390V, IC = 12A
RG= 10Ω, VGE= 15V,
(See figure 16)
Turn-on switching losses
Turn-off switching losses
Total switching losses
81
µJ
µJ
µJ
(2)
125
206
Eoff
Ets
VCC = 390V, IC = 12A
(1)
Eon
Turn-on switching losses
Turn-off switching losses
Total switching losses
161
255
416
µJ
µJ
µJ
RG= 10Ω, VGE= 15V,
(2)
Eoff
Tj = 125°C
Ets
(See figure 16)
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 14 If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/13
Electrical characteristics
STGP19NC60W
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
Transfer characteristics
Figure 3.
Figure 5.
6/13
Transconductance
Figure 4.
Collector-emitter on voltage vs
temperature
Gate charge vs gate-source voltage Figure 6.
Capacitance variations
STGP19NC60W
Electrical characteristics
Figure 7.
Normalized gate threshold voltage Figure 8.
vs temperature
Collector-emitter on voltage vs
collector current
Figure 9.
Normalized breakdown voltage vs Figure 10. Switching losses vs temperature
temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
current
7/13
Electrical characteristics
Figure 13. Turn-off SOA
STGP19NC60W
8/13
STGP19NC60W
Test circuit
3
Test circuit
Figure 14. Test circuit for inductive load
switching
Figure 15. Gate charge test circuit
Figure 16. Switching waveform
9/13
Package mechanical data
STGP19NC60W
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STGP19NC60W
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.49
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
11/13
Revision history
STGP19NC60W
5
Revision history
Table 7.
Date
Revision history
Revision
Changes
04-Oct-2006
08-May-2007
1
2
Initial release.
Modified vaule on Table 1
12/13
STGP19NC60W
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13/13
相关型号：
STGP30NC60W
N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH TM IGBT
STMICROELECTR
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