STGP20NB60H [STMICROELECTRONICS]
N-CHANNEL 20A - 600V TO-220 PowerMESH IGBT; N沟道20A - 600V TO- 220的PowerMESH IGBT
| 型号： | STGP20NB60H |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 20A - 600V TO-220 PowerMESH IGBT |
| 文件： | 总8页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGP20NB60H
N-CHANNEL 20A - 600V TO-220
PowerMESH IGBT
TYPE
VCES
VCE(sat)
< 2.8 V
IC
20 A
STGP20NB60H
600 V
■
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
■
■
■
■
■
LOW ON-VOLTAGEDROP (VCESAT)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
OFF LOSSES INCLUDE TAIL CURRENT
3
2
1
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
TO-220
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH FREQUENCY MOTOR CONTROLS
WELDING EQUIPMENTS
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VECR
VGE
IC
Parameter
Value
600
20
Unit
Collector-Emitter Voltage (VGS = 0)
Emitter-Collector Voltage
Gate-Emitter Voltage
V
V
20
V
±
o
Collector Current (continuous) at Tc = 25 C
40
A
o
IC
Collector Current (continuous) at Tc = 100 C
20
160
A
I
CM(• )
Collector Current (pulsed)
A
o
Ptot
Total Dissipation at Tc = 25 C
125
W
Derating Factor
1.0
W/oC
oC
oC
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/8
June 1999
STGP20NB60H
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
Typ
1.0
62.5
0.5
oC/W
oC/W
oC/W
Rthc-h
Thermal Resistance Case-heatsink
(Tj = 25 oC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
Parameter
Test Conditions
IC = 250 µA VGE = 0
Min.
Typ.
Max.
Unit
V
VBR(CES) Collector-Emitter
Breakdown Voltage
600
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating
VCE = Max Rating
Tj = 25 oC
Tj = 125 oC
10
100
µA
A
µ
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V
VCE = 0
± 100
nA
ON ( )
Symbol
VGE(th)
Parameter
Test Conditions
Min.
3
Typ.
Max.
5
Unit
V
Gate Threshold
Voltage
VCE = VGE IC = 250 µA
VCE(SAT) Collector-Emitter
Saturation Voltage
VGE = 15 V IC = 20 A
VGE = 15 V IC = 20 A Tj = 125 C
2.3
1.9
2.8
V
V
o
DYNAMIC
Symbol
gfs
Parameter
Forward
Test Conditions
IC = 20 A
Min.
7.0
Typ.
10
Max.
Unit
S
VCE =25 V
Transconductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25 V f = 1 MHz VGE = 0
1200
140
28
1700
200
40
2200
260
52
pF
pF
pF
QG
QGE
QGC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480 V IC = 20 A VGE = 15 V
110
13
51
145
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V RG=10 Ω
80
A
Tj = 150 oC
SWITCHING ON
Symbol
Parameter
Delay Time
Rise Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VCC = 480 V
VGE= 15 V
IC = 20 A
RG = 10Ω
20
70
ns
ns
(di/dt)on Turn-on Current Slope VCC = 480 V
IC = 20 A
350
A/ s
µ
RG = 10 Ω
VGE = 15 V
Eon
Turn-on
Tj = 125 oC
300
J
µ
Switching Losses
2/8
STGP20NB60H
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING OFF
Symbol
tc
Parameter
Test Conditions
VCC = 480 V
GE = 10
Min.
Typ.
Max.
Unit
Cross-Over Time
Off Voltage Rise Time
Delay Time
IC = 20 A
VGE = 15 V
115
32
170
75
ns
ns
ns
tr(voff
)
R
Ω
td(off
tf
)
Fall Time
ns
Eoff(**)
Ets
Turn-off Switching Loss
Total Switching Loss
0.4
0.65
mJ
mJ
tc
tr(voff
td(off
tf
Eoff(**)
Ets
Cross-Over Time
Off Voltage Rise Time RGE = 10
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
VCC = 480 V
IC = 20 A
VGE = 15 V
190
55
210
140
0.7
1.0
ns
ns
ns
ns
mJ
mJ
)
)
Ω
Tj = 125 oC
(•) Pulse width limited by max. junction temperature
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
STGP20NB60H
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/8
STGP20NB60H
Normalized Breakdown Voltage vs Temperature
CapacitanceVariations
Gate Charge vs Gate-EmitterVoltage
Total Switching Losses vs Gate Resistancetotal
Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
5/8
STGP20NB60H
Switching Off Safe Operating Area
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For InductiveLoad Switching
Fig. 3
: Switching Waveforms
6/8
STGP20NB60H
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/8
STGP20NB60H
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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.
8/8
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