STGP14N60D [STMICROELECTRONICS]

TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,25A I(C),TO-220AB;


型号：	STGP14N60D
厂家：	ST
描述：	TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,25A I(C),TO-220AB 栅双极性晶体管
文件：	总11页 (文件大小：413K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STGF14N60D

STGP14N60D

14 A - 600 V - short circuit rugged IGBT

Preliminary Data

Features

■ Low on-voltage drop (V

)

CE(sat)

■ Operating junction temperature up to 175 °C

■ Low C / C ratio (no cross conduction

res

ies

susceptibility)

■ Tight parameter distribution

■ Ultra fast soft recovery antiparallel diode

■ Short circuit rugged

TO-220

TO-220FP

Applications

■ Motor drives

■ High frequency inverters

■ SMPS and PFC in both hard switch and

Figure 1.

Internal schematic diagram

resonant topologies

Description

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

Table 1.

Device summary

Order codes

Marking

Package

TO-220FP

TO-220

Packaging

STGF14N60D

STGP14N60D

GF14N60D

GP14N60D

Tube

February 2009

Rev 1

1/11

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

Contents

STGF14N60D, STGP14N60D

Contents

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

2/11

STGF14N60D, STGP14N60D

Electrical ratings

Table 2.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

TO-220

TO-220FP

V_CES

Collector-emitter voltage (V_GE= 0)

Collector current (continuous) at T_C= 25 °C

Collector current (continuous) at T_C= 100 °C

Turn-off latching current

600

(1)

I_C

(1)

I_C

(2)

I_CL

(3)

I_CP

Pulsed collector current

V_GE

I_F

Gate-emitter voltage

Diode RMS forward current at T_C= 25 °C

Surge non repetitive forward current t_p= 10 ms

sinusoidal

I_FSM

Insulation withstand voltage (RMS) from all three

leads to external hea sink

V_ISO

2500

( t=1 s; T_C= 25 °C)

P_TOT

t_scw

T_j

Total dissipation at T_C= 25 °C

µs

°C

Short circuit withstand time, V_CE= 0.5V_(BR)CES

– 40 to 175

T_C= 125 °C, R_G= 10 Ω, V_GE= 15 V

Operating junction temperature

1. Calculated according to the iterative formula:

_j(max)– T_C

I_C(T_C) = ----------------------------------------------------------------------------------------------------------

R_{thj – c}× V_CE(sat)(max)(T_j(max), I_C(T_C))

2. Vclamp = 80% of V_CES, T_j=175 °C, R_G=10 Ω, V_GE=15 V

3. Pulse width limited by max. junction temperature allowed

Table 3.

Symbol

Thermal resistance

Parameter

Value

Unit

TO-220

TO-220FP

R_thj-caseThermal resistance junction-case IGBT max.

R_thj-caseThermal resistance junction-case diode max.

R_thj-ambThermal resistance junction-ambient max.

1.56

2.2

4.5

5.6

°C/W

62.5

3/11

Electrical characteristics

STGF14N60D, STGP14N60D

Electrical characteristics

=25 °C unless otherwise specified)

CASE

Table 4.

Symbol

Static

Parameter

Test conditions

I_C= 1 mA

Min. Typ. Max. Unit

Collector-emitter breakdown

voltage (V_GE= 0)

V_(BR)CES

600

V_GE= 15 V, I_C= 7 A

2.1

1.8

Collector-emitter saturation

voltage

V_CE(sat)

V_GE= 15 V, I_C= 7 A, T_C= 125 °C

V_GE(th)Gate threshold voltage

V_CE= V_GE, I_C= 250 µA

4.5

6.5

Gate-emitter leakage

I_GES

V_GE= 20 V, T_C= 125 °C

100 nA

150 µA

current (V_CE= 0)

Collector cut-off current

V_CE= 600 V

I_CES

(V_GE= 0)

V_CE= 600 V, T_C= 125 °C

(1)

g_fs

Forward transconductance V_CE= 15 V _,I_C= 7 A

3.2

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Table 5.

Symbol

Dynamic

Parameter

Test conditions

Min. Typ. Max. Unit

Input capacitance

C_ies

C_oes

C_res

TBD

Output capacitance

V_CE= 25 V, f = 1 MHz, V_GE= 0

Reverse transfer

capacitance

Q_g

Q_ge

Q_gc

Total gate charge

V_CE= 390 V, I_C= 7 A,

V_GE= 15 V

TBD

Gate-emitter charge

Gate-collector charge

(see Figure 3)

4/11

STGF14N60D, STGP14N60D

Electrical characteristics

Min. Typ. Max. Unit

Table 6.

Symbol

Switching on/off (inductive load)

Parameter

Turn-on delay time

Current rise time

(di/dt)_onTurn-on current slope

Test conditions

t_d(on)

t_r

V_CC= 390 V, I_C= 7 A

R_G= 10 Ω, V_GE= 15 V,

(see Figure 2)

TBD

A/µs

V_CC= 390 V, I_C= 7 A

R_G= 10 Ω, V_GE= 15 V,

T_C= 125 °C

t_d(on)

t_r

Turn-on delay time

Current rise time

TBD

(di/dt)_onTurn-on current slope

A/µs

(see Figure 2)

t_r(V_off) Off voltage rise time

TBD

V_CC= 390 V, I_C= 7 A,

t_d(_off

t_f

)

Turn-off delay time

Current fall time

R_GE= 10 Ω, V_GE= 15 V

(see Figure 2)

V_CC= 390 V, I_C= 7 A,

R_GE= 10 Ω, V_GE= 15 V

T_C= 125 °C

t_r(V_off) Off voltage rise time

TBD

t_d(_off

t_f

)

Turn-off delay time

Current fall time

(see Figure 2)

Table 7.

Symbol

Switching energy (inductive load)

Parameter

Test conditions

Min Typ. Max Unit

Eon ⁽¹⁾

Turn-on switching losses

Turn-off switching losses

Total switching losses

V_CC= 390 V, I_C= 7 A

R_G= 10 Ω, V_GE= 15 V,

(see Figure 2)

TBD

µJ

(2)

E_off

E_ts

V_CC= 390 V, I_C= 7 A

R_G= 10 Ω, V_GE= 15 V,

T_C= 125 °C

Eon ⁽¹⁾

Turn-on switching losses

Turn-off switching losses

Total switching losses

TBD

µJ

(2)

E_off

E_ts

(see Figure 2)

1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package

with a co-pack diode, the co-pack diode is used as external diode. IGBTs and DIODE are at the same

temperature (25°C and 125°C)

2. Turn-off losses include also the tail of the collector current.

Table 8.

Symbol

Collector-emitter diode

Parameter

Test conditions

I_F= 7 A

Min Typ. Max Unit

1.8

1.3

2.1

V_F

Forward on-voltage

I_F= 7 A, T_C= 125 °C

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I_F= 7 A, V_R= 40 V,

di/dt = 100 A/µs

(see Figure 5)

Q_rr

I_rrm

2.1

I_F= 7 A, V_R= 40 V,

T_C= 125 °C,

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Q_rr

I_rrm

di/dt = 100 A/µs

(see Figure 5)

3.2

5/11

Test circuit

STGF14N60D, STGP14N60D

Test circuit

Figure 2.

Test circuit for inductive load

switching

Figure 3.

Gate charge test circuit

AM01504v1

AM01505v1

Figure 4.

Switching waveforms

Figure 5.

Diode recovery times waveform

Qrr

90%

10%

di/dt

V^G

t^rr

90%

10%

VCE

Tr(Voff)

Tcross

90%

10%

IRRM

Td(off)

Toff

Td(on)

Ton

Tr(Ion)

V^F

di/dt

AM01506v1

AM01507v1

6/11

STGF14N60D, STGP14N60D

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK

specifications, grade definitions and product status are available at: www.st.com. ECOPACK

is an ST trademark.

7/11

Package mechanical data

STGF14N60D, STGP14N60D

TO-220FP mechanical data

Dim.

Min.

Typ.

Max.

4.4

2.5

4.6

2.7

2.75

0.7

2.5

0.45

0.75

1.15

4.95

2.4

1.70

1.5

5.2

2.7

10.4

Dia

28.6

9.8

2.9

15.9

30.6

10.6

3.6

16.4

9.3

3.2

Dia

7012510_Rev_J

8/11

STGF14N60D, STGP14N60D

Package mechanical data

TO-220 mechanical data

inch

Dim

Min

Typ

Max

Min

Typ

Max

4.40

0.61

1.14

0.48

15.25

4.60

0.88

1.70

0.70

15.75

0.173

0.024

0.044

0.019

0.6

0.181

0.034

0.066

0.027

0.62

1.27

0.050

10.40

2.70

5.15

1.32

6.60

2.72

0.393

0.094

0.194

0.048

0.244

0.094

0.511

0.137

0.409

0.106

0.202

0.051

0.256

0.107

0.551

0.154

2.40

4.95

1.23

6.20

2.40

L20

L30

∅P

3.50

3.93

16.40

0.645

28.90

1.137

3.75

3.85

2.95

0.147

0.104

0.151

0.116

2.65

9/11

Revision history

STGF14N60D, STGP14N60D

Revision history

Table 9.

Date

20-Feb-2009

Document revision history

Revision

Changes

Initial release.

10/11

STGF14N60D, STGP14N60D

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11/11

STGP14N60D [STMICROELECTRONICS]

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