STGP12NB60K [STMICROELECTRONICS]
SHORT CIRCUIT PROOF PowerMESH IGBT; 防短路的PowerMESH IGBT
| 型号： | STGP12NB60K |
| 厂家： | 
ST |
| 描述： | SHORT CIRCUIT PROOF PowerMESH IGBT |
| 文件： | 总9页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGP12NB60K
N-CHANNEL 18A - 600V TO-220
SHORT CIRCUIT PROOF PowerMESH™ IGBT
TYPE
V
CES
V
I (#)
C
CE(sat)
(Max) @25°C
@ 100°C
STGP12NB60K
600 V
< 2.8 V
18 A
■
■
■
■
■
■
HIGH INPUT IMPEDANCE
LOW ON-LOSSES
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
VERY HIGH FREQUENCY OPERATION
3
2
1
TO-220
■
TYPICAL SHORT CIRCUIT WITHSTAND TIME 10
MICROS
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
™
MESH IGBTs, with outstanding performances. The
suffix “K” identifies a family optimized for high frequen-
cy applications (up to 50kHz) and short circuit proof in
order to achieve very high switching performances (re-
duced tfall) mantaining a low voltage drop.
APPLICATIONS
■
■
■
HIGH FREQUENCY MOTOR CONTROLS
SMPS
UPS
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
TO-220
PACKAGING
STGP12NB60K
GP12NB60K
TUBE
December 2003
1/9
STGP12NB60K
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
600
Unit
V
V
Collector-Emitter Voltage (V = 0)
CES
GS
V
Emitter-Collector Voltage
Gate-Emitter Voltage
20
V
ECR
V
± 20
30
V
GE
I
Collector Current (continuous) at T = 25°C (#)
A
C
C
I
Collector Current (continuous) at T = 100°C (#)
18
A
C
C
I
( )
Collector Current (pulsed)
Short Circuit Withstand
60
A
CM
Tsc
10
µs
W
P
Total Dissipation at T = 25°C
125
TOT
C
Derating Factor
1.0
W/°C
°C
°C
T
stg
Storage Temperature
–65 to 150
150
T
Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
1.0
°C/W
°C/W
62.5
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Collector-Emitter Breakdown
Voltage
I
C
= 250 µA, V = 0
600
V
BR(CES)
GE
I
Collector cut-off
(V = 0)
GE
V
V
= Max Rating, T = 25 °C
50
100
µA
µA
CES
CE
C
= Max Rating, T = 125 °C
CE
GE
C
I
Gate-Emitter Leakage
V
= ± 20V , V = 0
±100
nA
GES
CE
Current (V = 0)
CE
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
7
Unit
V
V
CE
= V , I = 250 µA
Gate Threshold Voltage
5
V
GE(th)
GE
C
V
Collector-Emitter Saturation
Voltage
V
V
= 15V, I = 12 A
2.2
1.7
2.8
V
V
CE(sat)
GE
C
= 15V, I = 12 A, Tj =125°C
GE
C
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
V
CE
= 25 V I = 12 A
Forward Transconductance
5
S
fs
, C
C
V = 25V, f = 1 MHz, V = 0
CE GE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
890
110
22
pF
pF
pF
ies
C
oes
C
res
Q
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
V
= 480V, I = 12 A,
= 15V
54
8
31
nC
nC
nC
g
CE
C
Q
ge
Q
gc
GE
I
Latching Current
V
clamp
= 480 V , V =15V,
48
A
CL
GE
Tj = 125°C , R = 10 Ω
G
T
wsc
Short Circuit WITHSTAND
Time
V
= 0.5 BV V = 15 V
ces , GE
10
µs
CE
Tj = 125°C , R = 10 Ω
G
2/9
STGP12NB60K
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Turn-on Delay Time
Rise Time
Test Conditions
Min.
Typ.
25
Max.
Unit
ns
t
V
R
= 480 V, I = 12 A
d(on)
CC
C
= 10Ω , V = 15 V
G
GE
t
14.5
590
180
ns
r
(di/dt)
Turn-on Current Slope
Turn-on Switching Losses
V
V
= 480 V, I = 12 A R =10Ω
A/µs
µJ
on
CC
C
G
Eon
= 15 V,Tj = 125°C
GE
SWITCHING OFF
Symbol
Parameter
Cross-over Time
Test Conditions
Min.
Typ.
130
25
Max.
Unit
ns
ns
ns
ns
µJ
µJ
ns
ns
ns
ns
µJ
µJ
t
V
R
= 480 V, I = 12 A,
c
cc
C
= 10 Ω , V = 15 V
GE
GE
t (V
)
off
Off Voltage Rise Time
Delay Time
r
t (
d off
)
96
t
f
Fall Time
100
258
410
310
80
E
off
(**)
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
E
ts
t
V
R
= 480 V, I = 12 A,
c
cc
C
= 10 Ω , V = 15 V
GE
GE
t (V
)
off
r
Tj = 125 °C
t (
d off
)
150
220
650
830
t
f
Fall Time
E
off
(**)
Turn-off Switching Loss
Total Switching Loss
E
ts
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
(#) Calculated according to the iterative formula:
T
– T
C
JMAX
--------------------------------------------------------------------------------------
THJ – C
I (T ) =
C
C
R
× V
(T , I )
CESAT(MAX) C C
3/9
STGP12NB60K
Transfer Characteristics
Output Characteristics
Transconductance
Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
4/9
STGP12NB60K
Gate Threshold vs Temperature
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
5/9
STGP12NB60K
Turn-Off SOA
Total Switching Losses vs Collector Current
Thermal Impedance
6/9
STGP12NB60K
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
7/9
STGP12NB60K
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/9
STGP12NB60K
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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9/9
相关型号：
STGP14NC60KD
N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
STMICROELECTR
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