STB55NE06T4 [STMICROELECTRONICS]
55A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3;
| 型号： | STB55NE06T4 |
| 厂家： | 
ST |
| 描述： | 55A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB55NE06
2
N-CHANNEL 60V - 0.19Ω - 55A D PAK
STripFET™ POWER MOSFET
V
R
I
D
TYPE
DSS
DS(on)
STB55NE06
60 V
<0.022 Ω
55 A
■
■
■
■
■
■
TYPICAL R (on) = 0.019Ω
DS
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
o
LOW GATE CHARGE 100 C
3
1
HIGH dv/dt CAPABILITY
2
APPLICATION ORIENTED
CHARACTERIZATION
D PAK
TO-263
(suffix“T4”)
■
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalance characteristics and less critical alignment steps
therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
60
Unit
V
V
Drain-source Voltage (V = 0)
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
60
V
DGR
GS
V
Gate- source Voltage
±20
55
V
GS
I
Drain Current (continuos) at T = 25°C
A
D
C
I
Drain Current (continuos) at T = 100°C
39
A
D
C
I
(•)
Drain Current (pulsed)
220
130
0.96
7
A
DM
P
Total Dissipation at T = 25°C
W
tot
C
Derating Factor
W/°C
V/ns
°C
°C
(2)
Peak Diode Recovery voltage slope
Storage Temperature
dv/dt
T
–60 to 175
175
stg
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area.
I
≤55A, di/dt ≤300A/µs, V ≤ V
, T ≤ T
(BR)DSS j JMAX.
SD
DD
November 2000
1/8
STB55NE06
THERMAL DATA
R
Thermal Resistance Junction-case
Max
Max
Typ
1.15
62.5
0.5
°C/W
°C/W
°C/W
°C
thj-case
R
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
thj-amb
thc-sink
R
T
Maximum Lead Temperature For Soldering Purpose
300
j
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
Avalanche Current, Repetitive or Not-Repetitive
I
AR
55
A
(pulse width limited by T max)
j
Single Pulse Avalanche Energy
E
AS
200
mJ
(starting T = 25 °C, I = I , V = 25 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 25 µA, V = 0
GS
D
V
60
V
(BR)DSS
Breakdown Voltage
V
V
= Max Rating
= Max Rating, T = 125 °C
Zero Gate Voltage
1
10
µA
µA
DS
I
DSS
Drain Current (V = 0)
GS
DS
C
Gate-body Leakage
V
GS
= ±20V
±100
nA
I
GSS
Current (V = 0)
DS
(1)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
GS(th)
V
V
= V
I
= 250 µA
I = 27.5 A
D
Gate Threshold Voltage
2
DS
GS
GS
D
= 10V
Static Drain-source On
Resistance
0.019
0.022
Ω
I
DS(on)
V
V
> I
= 10V
x R
D(on) DS(on)max
DS
I
On State Drain Current
55
A
D(on)
GS
DYNAMIC
Symbol
Parameter
Test Conditions
> I x R
DS(on)max,
Min.
Typ.
Max.
Unit
V
DS
D(on)
(1)
Forward Transconductance
25
35
S
g
fs
I
D
= 27.5 A
C
C
V
= 25V f = 1 MHz V = 0
DS GS
Input Capacitance
Output Capacitance
3050
380
4000
500
pF
pF
iss
oss
Reverse Transfer
Capacitances
C
100
130
pF
rss
2/8
STB55NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time Rise Time
V
= 30V
I
= 27.5 A
= 10 V
GS
30
120
40
160
ns
ns
d(on)
DD
D
R
G
= 4.7 Ω
V
t
r
(see test circuit, Figure 3)
Q
V
DD
=48V I =55A V =10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
80
13
25
105
nC
nC
nC
g
D
GS
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time Rise Time
Fall Time
V
= 48 V
I
= 55 A
= 10 V
GS
55
155
70
ns
ns
d(on)
DD
D
R
G
= 4.7 Ω
V
(see test circuit, Figure 5)
t
r
Cross-over Time
t
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
55
Unit
A
I
Source-drain Current
SD
I
(•)
Source-drain Current (pulsed)
Forward On Voltage
220
1.5
A
SDM
V
(*)
I
I
= 60A
V
= 0
GS
V
SD
SD
SD
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 55 A
di/dt = 100 A/µs
T = 150 °C
110
430
7.5
ns
µC
A
V
= 30V
DD
j
Q
rr
(see test circuit, Figure 3)
I
RRM
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/8
STB55NE06
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STB55NE06
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STB55NE06
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STB55NE06
2
D PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
7/8
STB55NE06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2000 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
8/8
相关型号：
STB55NF06
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET
STMICROELECTR
STB55NF06-1
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET
STMICROELECTR
STB55NF06L
N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
STMICROELECTR
STB55NF06L-1
N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
STMICROELECTR
STB55NF06T4
N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET
STMICROELECTR
STB55NF06_06
N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明