STB55NF03LT4 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 55A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 30V V（ BR ） DSS | 55A I（ D） | TO- 263AB
| 型号： | STB55NF03LT4 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 55A I(D) | TO-263AB
|
| 文件： | 总11页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP55NF03L
STB55NF03L STB55NF03L-1
2
2
N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D PAK/I PAK
STripFET II POWER MOSFET
V
R
DS(on)
I
D
TYPE
DSS
STP55NF03L
STB55NF03L
STB55NF03L-1
30 V
30 V
30 V
<0.013 Ω
<0.013 Ω
<0.013 Ω
55 A
55 A
55 A
■
■
TYPICAL R (on) = 0.01 Ω
DS
3
3
1
2
1
OPTIMIZED FOR HIGH SWITCHING
OPERATIONS
2
D PAK
TO-263
2
I PAK
■
■
LOW GATE CHARGE
TO-262
LOGIC LEVEL GATE DRIVE
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique ”Single Feature Size
2
1
”
TO-220
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
LOW VOLTAGE DC-DC CONVERTERS
HIGH CURRENT, HIGH SWITCHING SPEED
HIGH EFFICIENCY SWITCHING CIRCUITS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
30
Unit
V
V
Drain-source Voltage (V = 0)
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
30
V
DGR
GS
V
Gate- source Voltage
± 16
55
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T = 100°C
39
A
D
C
I
(•)
DM
Drain Current (pulsed)
220
A
P
Total Dissipation at T = 25°C
80
W
tot
C
Derating Factor
0.53
-60 to 175
175
W/°C
°C
°C
T
stg
Storage Temperature
T
Max. Operating Junction Temperature
j
(•) Pulse width limited by safe operating area.
March 2002
1/11
.
STP55NF03L STB55NF03L/-1
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1.875
62.5
300
°C/W
°C/W
°C
T
l
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V = 0
30
V
D
GS
V
(BR)DSS
Breakdown Voltage
V
V
= Max Rating
DS
Zero Gate Voltage
1
10
µA
µA
I
DSS
Drain Current (V = 0)
= Max Rating T = 125°C
GS
DS
C
Gate-body Leakage
V
= ± 16V
±100
nA
GS
I
GSS
Current (V = 0)
DS
(*)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
V
= V
I
I
= 250 µA
Gate Threshold Voltage
1
V
GS(th)
DS
GS
D
V
V
= 10 V
= 4.5 V
= 27.5 A
Static Drain-source On
Resistance
0.01
0.013
0.013
0.020
Ω
Ω
GS
GS
D
I
R
DS(on)
= 27.5 A
D
DYNAMIC
Symbol
Parameter
Test Conditions
> I x R
DS(on)max,
Min.
Typ.
Max.
Unit
V
DS
D(on)
(*)
g
fs
Forward Transconductance
30
S
I
= 27.5 A
D
C
V
= 25V, f = 1 MHz, V
= 0
GS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
1265
435
115
pF
pF
pF
DS
iss
C
oss
C
rss
2/11
STP55NF03L STB55NF03L/-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 15 V = 27.5 A
Min.
Typ.
Max.
Unit
V
R
I
D
Turn-on Delay Time
Rise Time
28
400
ns
ns
t
DD
d(on)
= 4.7 Ω
V
= 4.5 V
GS
t
G
r
(Resistive Load, Figure 3)
Q
V
= 24 V I = 55 A V = 4.5V
DD D GS
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
20
7
10
27
nC
nC
nC
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 15V = 27.5 A
Min.
Min.
Typ.
Max.
Unit
V
R
I
D
Turn-off Delay Time
Fall Time
25
50
ns
ns
t
DD
d(off)
= 4.7Ω,
V
= 4.5 V
GS
t
G
f
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
SD
( )
Source-drain Current
Source-drain Current (pulsed)
55
220
A
A
I
•
SDM
(*)
I
I
= 55 A
V
= 0
GS
V
Forward On Voltage
1.3
V
SD
SD
SD
t
= 55 A
= 30 V
di/dt = 100A/µs
T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
70
160
4.5
ns
nC
A
rr
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
•)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/11
STP55NF03L STB55NF03L/-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/11
STP55NF03L STB55NF03L/-1
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
5/11
STP55NF03L STB55NF03L/-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits ForResistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/11
STP55NF03L STB55NF03L/-1
2
D PAK MECHANICAL DATA
mm.
inch.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.001
0.028
0.045
0.018
0.048
0.352
TYP.
TYP.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.21
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
8.5
10.4
0.394
0.409
E1
G
4.88
15
5.28
15.85
1.4
0.192
0.591
0.050
0.055
0.094
0.208
0.624
0.055
0.069
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.016
V2
0°
4°
0°
4°
7/11
STP55NF03L STB55NF03L/-1
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
4.40
1.23
2.40
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
8/11
STP55NF03L STB55NF03L/-1
2
TO-262 (I PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
9/11
STP55NF03L STB55NF03L/-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
inch
MAX.
DIM.
MIN.
MAX.
MIN.
A
B
C
D
G
N
T
330
12.992
0.520
1.039
1.197
1.5
0.059
0.504
0.795
0.960
3.937
12.8
20.2
24.4
100
13.2
26.4
30.4
BASE QTY
BULK QTY
1000
1000
TAPE MECHANICAL DATA
mm
inch
DIM.
MIN.
10.5
15.7
1.5
MAX.
10.7
15.9
1.6
MIN.
0.413
0.618
0.059
0.062
0.065
0.449
0.189
0.153
0.468
0075
1.574
MAX.
0.421
0.626
0.063
0.063
0.073
0.456
0.197
0.161
0.476
0.082
A0
B0
D
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
50
T
0.25
23.7
0.35
24.3
.0.0098 0.0137
0.933 0.956
W
* on sales type
10/11
STP55NF03L STB55NF03L/-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of useof such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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11/11
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