STB55NF06LT4 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 55A I（ D） | TO- 263AB\n
| 型号： | STB55NF06LT4 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB
|
| 文件： | 总12页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP55NF06L - STP55NF06LFP
STB55NF06L - STB55NF06L-1
N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D2PAK/I2PAK
STripFET II POWER MOSFET
TYPE
V
R
DS(on)
I
D
DSS
STP55NF06L
STP55NF06LFP
STB55NF06L
STB55NF06L-1
60 V
60 V
60 V
60 V
<0.018 Ω
<0.018 Ω
<0.018 Ω
<0.018 Ω
55 A
55 A
55 A
55 A
3
3
2
2
1
1
■
■
■
TYPICAL R (on) = 0.014Ω
DS
TO-220
TO-220FP
EXCEPTIONAL dv/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
3
1
3
2
1
DESCRIPTION
2
2
D PAK
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size ” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
I PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP55NF06L
STB55NF06L/-1
STP55NF06LFP
V
Drain-source Voltage (V
= 0)
GS
60
60
V
V
V
A
A
A
W
DS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
± 16
GS
I
Drain Current (continuous) at T = 25°C
55
39
30
21
D
C
I
Drain Current (continuous) at T = 100°C
D
C
I
(l )
Drain Current (pulsed)
220
95
120
30
DM
P
Total Dissipation at T = 25°C
TOT
C
Derating Factor
0.63
0.2
W/°C
V/ns
mJ
dv/dt (2)
(1)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
20
E
300
AS
V
-
2500
V
ISO
T
stg
– 55 to 175
°C
T
Max. Operating Junction Temperature
j
(1) Starting T =25°C, I =27.5A, V =30V
j
D
DD
(●) Pulse width limited by safe operating area
August 2002
1/12
(2) I ≤ 55 A, di/dt ≤ 200A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
THERMAL DATA
TO-220
2
D PAK
TO-220FP
2
I PAK
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
1.58
5.0
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
62.5
300
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 250 µA, V = 0
60
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
DS
1
µA
µA
nA
DSS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ± 16 V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
1.7
Max.
Unit
V
V
GS(th)
DS(on)
Gate Threshold Voltage
V
V
V
= V , I = 250 µA
1
DS
GS
GS
GS
D
R
Static Drain-source On
Resistance
= 5 V, I = 27.5 A
0.016
0.014
0.020
0.018
Ω
D
= 10V, I = 27.5 A
Ω
D
DYNAMIC
Symbol
Parameter
Forward Transconductance
Input Capacitance
Test Conditions
Min.
Typ.
30
Max.
Unit
S
g
fs
(1)
V
= 15V , I = 27.5 A
DS D
C
V
= 25V, f = 1 MHz, V = 0
1700
300
105
pF
pF
pF
iss
DS
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer
Capacitance
2/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
= 30 V, I = 27.5A
Turn-on Delay Time
20
ns
d(on)
DD
D
R
= 4.7Ω V
= 10V
GS
G
t
Rise Time
100
ns
r
(see test circuit, Figure 3)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 48 V, I = 55 A,
= 4.5V
27
7
10
37
nC
nC
nC
g
DD
GS
D
Q
Q
gs
gs
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
Turn-off-Delay Time
Fall Time
V
= 30 V, I = 27.5 A,
40
20
ns
ns
d(off)
DD
D
t
R = 4.7Ω, V = 4.5V
G GS
(see test circuit, Figure 5)
f
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
55
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
220
1.3
A
SDM
V
I
I
= 55 A, V = 0
V
SD
SD
SD
GS
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
80
200
5
ns
nC
A
= 55A, di/dt = 100A/µs,
= 30 V, T = 150°C
rr
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area For TO-220/D2PAK/I2PAK
ThermalImpedanceforTO-220/D2PAK/I2PAK
3/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
TO-220FP MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
¯
1 2
3
L5
L2
L4
8/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
2
D PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
3
9/12
1
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
TO-262 (I2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
10/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8 13.2 0.504 0.520
20.2 0795
24.4 26.4 0.960 1.039
100 3.937
0.059
30.4
1.197
BASE QTY
BULK QTY
TAPE MECHANICAL DATA
1000
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
11/12
STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information norfor any infringement of patents orother rights ofthird partieswhich mayresult from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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12/12
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ETC
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