STB55NF06T4 [STMICROELECTRONICS]
N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET; N沟道60V - 0.015ヘ - 50A - D2PAK / I2PAK / TO- 220 / TO- 220FP STripFET⑩ II功率MOSFET型号: | STB55NF06T4 |
厂家: | ST |
描述: | N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET |
文件: | 总18页 (文件大小:543K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STB55NF06 - STB55NF06-1
STP55NF06 - STP55NF06FP
N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP
STripFET™ II Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STB55NF06
STB55NF06-1
STP55NF06
60V
60V
60V
60V
<0.018Ω
<0.018Ω
<0.018Ω
<0.018Ω
50A
50A
3
3
1
2
1
D2PAK
50A
50A (1)
TO-220
STP55NF06FP
1. Refer to soa for the max allowable current value on
FP-type due to Rth value
3
2
■ 100% avalanche tested
1
3
2
1
I2PAK
■ Exceptional dv/dt capability
TO-220FP
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
Internal schematic diagram
remarkable manufacturing reproducibility.
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STB55NF06T4
STB55NF06-1
STP55NF06FP
STP55NF06
B55NF06
B55NF06
D2PAK
I2PAK
Tape & reel
Tube
P55NF06FP
P55NF06
TO-220FP
TO-220
Tube
Tube
June 2006
Rev 10
1/18
www.st.com
18
Contents
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220
D2PAK
I2PAK
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
60
20
V
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
50
35
50(1)
35(1)
200(1)
30
A
A
ID
(2)
IDM
Ptot
200
110
0.73
A
Total dissipation at TC = 25°C
Derating Factor
W
0.20
W/°C
mJ
V/ns
V
(3)
EAS
Single pulse avalanche energy
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Storage temperature
340
7
dv/dt (4)
VISO
Tstg
-
2500
-55 to 175
°C
Tj
Max. operating junction temperature
1. Refer to soa for the max allowable current value on FP-type due to Rth value
2. Pulse width limited by safe operating area.
3. Starting Tj = 25°C, VDD = 30V, ID =25A
4. ISD ≤50A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Table 2.
Thermal data
TO-220
D2PAK
I2PAK
TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
1.36
5
°C/W
°C/W
62.5
300
Maximum lead temperature for soldering
TJ
°C
purpose(1)
1. for 10 sec. 1.6mm from case
3/18
Electrical characteristics
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source
V(BR)DSS
ID = 250µA, VGS =0
60
V
breakdown voltage
V
DS = max ratings
Zero gate voltage
1
µA
µA
IDSS
VDS = max ratings,
TC = 125°C
drain current (VGS = 0)
10
Gate-body leakage
current (VDS = 0)
IGSS
VGS
VDS = VGS, ID = 250µA
GS = 10V, ID = 27.5A
=
20V
100
4
nA
V
VGS(th)
RDS(on)
Gate threshold voltage
2
3
Static drain-source on
resistance
V
0.015
0.018
Ω
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Forward
transconductance
(1)
gfs
VDS = 15V, ID = 27.5A
18
S
Input capacitance
Output capacitance
Ciss
Coss
Crss
1300
300
pF
pF
pF
VDS = 25V, f = 1MHz,
VGS = 0
Reverse transfer
capacitance
105
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
20
50
36
15
ns
ns
ns
ns
VDD = 30V, ID = 27.5A
RG = 4.7Ω VGS = 10V
(see Figure 14)
Turn-off delay time
Fall time
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 48V, ID = 55A,
VGS = 10V
44.5
10.5
17.5
60
nC
nC
nC
(see Figure 15)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/18
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Electrical characteristics
Table 5.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
ISD
50
A
A
Source-drain current
(pulsed)
(1)
ISDM
200
(2)
VSD
Forward on voltage
ISD = 50A, VGS = 0
1.5
V
ISD = 50A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
75
170
4.5
ns
nC
A
di/dt = 100A/µs,
VDD = 30V, Tj = 150°C
(see Figure 16)
Qrr
IRRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/18
Electrical characteristics
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO- Figure 2. Thermal impedance TO-
2
2
2
2
220/D PAK/I PAK
220/D PAK/I PAK
Figure 3. Safe operating area for TO-220FP
Figure 4. Thermal impedance TO-220FP
Figure 5. Output characterisics
Figure 6. Transfer characteristics
6/18
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Electrical characteristics
Figure 7. Transconductance
Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs
vs temperature temperature
7/18
Electrical characteristics
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Figure 13. Source-drain diode forward
characteristics
8/18
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Test circuit
3
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
9/18
Test circuit
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Figure 20. Diode recovery times waveform
10/18
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/18
Package mechanical data
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
12/18
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Package mechanical data
TO-262 (I2PAK) MECHANICAL DATA
mm.
TYP
inch
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
TYP.
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
13/18
Package mechanical data
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
14/18
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Package mechanical data
TO-220FP MECHANICAL DATA
mm.
TYP
inch
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
TYP.
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
15/18
Packaging mechanical data
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
16/18
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Revision history
6
Revision history
Table 6.
Date
Revision history
Revision
Changes
19-Oct-2005
02-Dec-2005
28-Mar-2006
26-Jun-2006
7
8
Preliminary document
New datasheet according to PCN MLD-PMT/05/1115
Inserted ecopack indication
9
10
New template, no content change
17/18
STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,
AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
18/18
相关型号:
STB55NF06_06
N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET
STMICROELECTR
STB5BK50Z-1
N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
STMICROELECTR
STB5N52K3
N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3⢠Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK
ETC
©2020 ICPDF网 联系我们和版权申明