首页 |元器件品牌

STB55NF06-1 [STMICROELECTRONICS]

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET; N沟道60V - 0.015欧姆 - 50A TO- 220 / TO- 220FP / I PAK / DPAK STripFET⑩ II功率MOSFET
STB55NF06-1
型号： STB55NF06-1
厂家： ST    ST
描述：

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET
N沟道60V - 0.015欧姆 - 50A TO- 220 / TO- 220FP / I PAK / DPAK STripFET⑩ II功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件： 总12页 (文件大小：486K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
STB55NF06 STB55NF06-1  
STP55NF06 STP55NF06FP  
²
N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I PAK/D²PAK  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
TO-220FP  
STP55NF06  
STB55NF06-1  
STB55NF06  
STP55NF06FP  
60 V  
60 V  
60 V  
60 V  
<0.018 Ω  
<0.018 Ω  
<0.018 Ω  
<0.018 Ω  
50 A  
50 A  
50 A  
50 A(*)  
3
2
3
TO-220  
2
1
1
■
■
■
■
TYPICAL R (on) = 0.015 Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
2
SURFACE-MOUNTING D PAK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX) OR  
IN TAPE & REEL (SUFFIX “T4”)  
3
1
3
2
1
²
D PAK  
²
I PAK  
■
THROUGH-HOLE I²PAK (TO-262) POWER  
PACKAGE IN TUBE (SUFFIX “-1")  
TO-263  
(Suffix “T4”)  
TO-262  
(Suffix “-1”)  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
This Power MOSFET is the latest development of ST-  
Microelectronis unique "Single Feature Size™" strip-  
based process. The resulting transistor shows ex-  
tremely high packing density for low on-resistance,  
rugged avalanche characteristics and less critical  
alignment steps therefore a remarkable manufactur-  
ing reproducibility.  
APPLICATIONS  
■
■
■
■
HIGH CURRENT, HIGH SWITCHING SPEED  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP_B55NF06(-1)  
STP55NF06FP  
V
Drain-source Voltage (V = 0)  
60  
60  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
DGR  
GS  
V
GS  
Gate- source Voltage  
± 20  
V
I
I
Drain Current (continuous) at T = 25°C  
50  
35  
200  
110  
0.73  
50(*)  
35(*)  
200(*)  
30  
A
A
A
W
W/°C  
V/ns  
mJ  
D
C
Drain Current (continuous) at T = 100°C  
D
C
I
(•)  
Drain Current (pulsed)  
DM  
P
Total Dissipation at T = 25°C  
tot  
C
Derating Factor  
0.2  
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
7
dv/dt  
E
350  
AS  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
(1)  
(•) Pulse width limited by safe operating area  
(*)Refer to soa for the max allowable current value on FP-type due  
to Rth value  
I
≤50A, di/dt ≤400A/µs, V ≤ V  
, T ≤ T  
(BR)DSS j JMAX  
SD  
(2) Starting  
DD  
o
T = 25 C, I = 25A, V = 30V  
j
D
DD  
March 2003  
1/12  
.
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP  
THERMAL DATA  
²
I PAK  
TO-220FP  
D²PAK  
TO-220  
Rthj-case  
Thermal Resistance Junction-case  
Max  
1.36  
5
°C/W  
Thermal Resistance Junction-ambient  
Maximum Lead Temperature For Soldering Purpose  
(1.6 mm from case, for 10 sec)  
Max  
62.5  
300  
°C/W  
°C  
Rthj-amb  
T
l
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
= 250 µA, V = 0  
D
GS  
V
60  
V
(BR)DSS  
Breakdown Voltage  
V
V
= Max Rating  
= Max Rating T = 125°C  
Zero Gate Voltage  
1
10  
µA  
µA  
I
DS  
DSS  
Drain Current (V = 0)  
GS  
DS  
GS  
C
Gate-body Leakage  
V
= ± 20 V  
±100  
nA  
I
GSS  
Current (V = 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
3
Max.  
4
Unit  
V
V
GS(th)  
V
V
= V  
I
= 250 µA  
D
Gate Threshold Voltage  
2
DS  
GS  
GS  
= 10 V  
I
= 27.5 A  
Static Drain-source On  
Resistance  
0.015  
0.018  
Ω
R
D
DS(on)  
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
= 15 V = 27.5 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
V
I
D
g
fs  
Forward Transconductance  
18  
S
DS  
DS  
= 25V, f = 1 MHz, V = 0  
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
1530  
300  
105  
pF  
pF  
pF  
iss  
GS  
C
oss  
C
rss  
2/12  
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
R
= 30 V  
= 4.7 Ω  
I = 27.5 A  
= 10 V  
GS  
Turn-on Delay Time  
Rise Time  
16  
8
ns  
ns  
t
DD  
D
d(on)  
V
t
r
G
(Resistive Load, Figure 3)  
Q
V
= 48 V I = 55 A V = 10V  
D GS  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
44.5  
10.5  
17.5  
60  
nC  
nC  
nC  
g
DD  
Q
Q
gs  
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
= 30V = 27.5 A  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
I
D
Turn-off Delay Time  
Fall Time  
36  
15  
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
= 10 V  
GS  
t
G
f
(Resistive Load, Figure 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
50  
200  
A
A
SD  
( )  
•
I
SDM  
(*)  
I
I
= 55A  
V
= 0  
GS  
V
Forward On Voltage  
1.5  
V
SD  
SD  
SD  
t
= 55 A  
= 30 V  
di/dt = 100A/µs  
T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
75  
170  
4.5  
ns  
nC  
A
rr  
Q
V
rr  
DD  
j
I
(see test circuit, Figure 5)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Safe Operating Area for  
Safe Operating Area for TO-220FP  
3/12  
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP  
Thermal Impedance  
Output Characteristics  
Transconductance  
Thermal Impedance for TO-220FP  
Transfer Characteristics  
Static Drain-source On Resistance  
4/12  
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized Breakdown Voltage Temperature  
5/12  
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For Resistive  
Fig. 4: Gate Charge test Circuit  
Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/12  
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP  
2
D PAK MECHANICAL DATA  
mm.  
inch.  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.028  
0.045  
0.018  
0.048  
0.352  
TYP.  
0.181  
0.106  
0.009  
0.037  
0.067  
0.024  
0.054  
0.368  
A
A1  
A2  
B
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.21  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
10.4  
0.394  
0.409  
E1  
G
8.5  
4.88  
15  
5.28  
15.85  
1.4  
0.192  
0.591  
0.050  
0.055  
0.094  
0.208  
0.624  
0.055  
0.069  
0.126  
L
L2  
L3  
M
1.27  
1.4  
1.75  
3.2  
2.4  
R
0.4  
0.015  
V2  
0°  
8°  
0°  
8°  
7/12  
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP  
TO-220 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.40  
1.23  
2.40  
TYP.  
MAX.  
4.60  
1.32  
2.72  
MIN.  
0.173  
0.048  
0.094  
MAX.  
0.181  
0.051  
0.107  
A
C
D
D1  
E
1.27  
0.050  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
DIA.  
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
3.5  
3.93  
3.85  
3.75  
L2  
Dia.  
L5  
L9  
L7  
L6  
L4  
P011C  
8/12  
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP  
TO-262 (I2PAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.027  
0.044  
0.017  
0.048  
0.352  
0.094  
0.393  
0.515  
0.137  
0.050  
MAX.  
0.181  
0.106  
0.036  
0.067  
0.023  
0.053  
0.368  
0.106  
0.409  
0.531  
0.149  
0.055  
A
A1  
B
2.49  
0.7  
2.69  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.23  
8.95  
2.4  
0.6  
C2  
D
1.36  
9.35  
2.7  
e
E
10  
10.4  
13.6  
3.78  
1.4  
L
13.1  
3.48  
1.27  
L1  
L2  
L1  
L2  
D
L
P011P5/E  
9/12  
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP  
TO-220FP MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
2.7  
2.75  
0.7  
1
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
15.9  
9
30.6  
10.6  
16.4  
9.3  
1.126  
0.385  
0.626  
0.354  
0.118  
1.204  
0.417  
0.645  
0.366  
0.126  
3
3.2  
L3  
L6  
L7  
¯
1 2 3  
L4  
L2  
10/12  
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP  
D2PAK FOOTPRINT  
TUBE SHIPMENT (no suffix)*  
TAPE AND REEL SHIPMENT (suffix ”T4”)*  
REEL MECHANICAL DATA  
mm  
inch  
MAX.  
DIM.  
MIN.  
MAX.  
MIN.  
A
B
C
D
G
N
T
330  
12.992  
0.520  
1.039  
1.197  
1.5  
12.8  
20.2  
24.4  
100  
0.059  
0.504  
0.795  
0.960  
3.937  
13.2  
26.4  
30.4  
BASE QTY  
BULK QTY  
1000  
1000  
TAPE MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
10.5  
15.7  
1.5  
MAX.  
10.7  
15.9  
1.6  
MIN.  
0.413  
0.618  
0.059  
0.062  
0.065  
0.449  
0.189  
0.153  
0.468  
0075  
MAX.  
0.421  
0.626  
0.063  
0.063  
0.073  
0.456  
0.197  
0.161  
0.476  
0.082  
A0  
B0  
D
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
50  
1.574  
T
0.25  
23.7  
0.35  
24.3  
.0.0098 0.0137  
0.933 0.956  
W
* on sales type  
11/12  
STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2003 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
12/12  

相关型号：

STB55NF06FP

 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 26A I(D) | TO-220FP
ETC

STB55NF06L

 N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
STMICROELECTR

STB55NF06L-1

 N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
STMICROELECTR

STB55NF06LT4

 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB
ETC

STB55NF06T4

 N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET
STMICROELECTR

STB55NF06_06

 N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET
STMICROELECTR

STB5600

 GPS RF FRONT-END IC
STMICROELECTR

STB5600TR

 RF/MICROWAVE DOWN CONVERTER, TQFP-32
STMICROELECTR

STB5610

 GPS RF FRONT-END IC
STMICROELECTR

STB5610E

 RF/MICROWAVE DOWN CONVERTER, TQFP-48
STMICROELECTR

STB5610ETR

 RF/MICROWAVE DOWN CONVERTER, TQFP-48
STMICROELECTR

STB5701

 350 to 400 MHz FSK/ASK receiver (ST-RECORD01 family)
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明