STB55NF06FP [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 26A I(D) | TO-220FP ; 晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 26A I（ D） | TO- 220FP\n
| 型号： | STB55NF06FP |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 26A I(D) | TO-220FP
|
| 文件： | 总10页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP55NF06
STB55NF06-1 STP55NF06FP
2
N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I PAK
STripFET II POWER MOSFET
V
R
DS(on)
I
D
TYPE
DSS
STP55NF06
STB55NF06-1
STB55NF06FP
60 V
60 V
60 V
<0.018 Ω
<0.018 Ω
<0.018 Ω
50 A
50 A
26 A
■
■
■
■
TYPICAL R (on) = 0.015 Ω
DS
3
3
2
2
1
EXCEPTIONAL dv/dt CAPABILITY
1
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
2
I PAK
TO-220FP
TO-262
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique ”Single Feature Size
2
1
”
TO-220
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
■
HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ANVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP55NF06
STP55NF06FP
STB55NF06
V
Drain-source Voltage (V = 0)
60
60
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
± 20
V
GS
I
Drain Current (continuous) at T = 25°C
50
35
26
18
A
D
D
C
I
Drain Current (continuous) at T = 100°C
A
C
I
(•)
Drain Current (pulsed)
200
110
0.73
104
30
A
DM
P
Total Dissipation at T = 25°C
W
tot
C
Derating Factor
0.2
W/°C
V/ns
mJ
(1)
(2)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
7
dv/dt
E
350
AS
T
stg
-55 to 175
°C
T
Operating Junction Temperature
j
(•) Pulse width limited by safe operating area.
(1) I ≤50A, di/dt ≤400A/µs, V ≤ V
, T ≤ T
SD
DD
(BR)DSS j JMAX
o
(2) Starting T = 25 C, I = 25A, V = 30V
j
D
DD
August 2002
1/10
.
STB55NF06-1 STP55NF06 STP55NF06FP
THERMAL DATA
2
I PAK
TO-220FP
TO-220
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Max
1.36
5
°C/W
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
62.5
300
°C/W
°C
T
l
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V = 0
D
GS
V
60
V
(BR)DSS
Breakdown Voltage
V
V
= Max Rating
DS
Zero Gate Voltage
1
10
µA
µA
I
DSS
Drain Current (V = 0)
= Max Rating T = 125°C
GS
DS
C
Gate-body Leakage
V
= ± 20 V
±100
nA
GS
I
GSS
Current (V = 0)
DS
(*)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
V
V
= V
I
= 250 µA
D
Gate Threshold Voltage
2
GS(th)
DS
GS
GS
= 10 V
I
= 27.5 A
Static Drain-source On
Resistance
0.015
0.018
Ω
R
D
DS(on)
DYNAMIC
Symbol
Parameter
Test Conditions
= 15 V = 27.5 A
Min.
Typ.
Max.
Unit
(*)
V
V
I
D
g
fs
Forward Transconductance
18
S
DS
DS
C
= 25V, f = 1 MHz, V
= 0
GS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
1530
300
105
pF
pF
pF
iss
C
oss
C
rss
2/10
STB55NF06-1 STP55NF06 STP55NF06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 30 V = 27.5 A
Min.
Typ.
Max.
Unit
V
R
I
D
Turn-on Delay Time
Rise Time
16
8
ns
ns
t
DD
d(on)
= 4.7 Ω
V
= 10 V
GS
t
G
r
(Resistive Load, Figure 3)
Q
V
= 48 V I = 55 A V = 10V
DD D GS
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
44.5
10.5
17.5
60
nC
nC
nC
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 30V = 27.5 A
Min.
Min.
Typ.
Max.
Unit
V
R
I
D
Turn-off Delay Time
Fall Time
36
15
ns
ns
t
DD
d(off)
= 4.7Ω,
V
= 10 V
GS
t
G
f
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
SD
( )
Source-drain Current
Source-drain Current (pulsed)
50
220
A
A
I
•
SDM
(*)
I
I
= 55A
V
= 0
GS
V
Forward On Voltage
1.5
V
SD
SD
SD
t
= 55 A
= 30 V
di/dt = 100A/µs
T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
75
170
4.5
ns
nC
A
rr
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
(*)
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
•)Pulse width limited by safe operating area.
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/10
STB55NF06-1 STP55NF06 STP55NF06FP
Thermal Impedance
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/10
STB55NF06-1 STP55NF06 STP55NF06FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
5/10
STB55NF06-1 STP55NF06 STP55NF06FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits ForResistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
STB55NF06-1 STP55NF06 STP55NF06FP
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/10
STB55NF06-1 STP55NF06 STP55NF06FP
2
TO-262 (I PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
8/10
STB55NF06-1 STP55NF06 STP55NF06FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
9/10
STB55NF06-1 STP55NF06 STP55NF06FP
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of useof such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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10/10
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