SWD30N06 [SEMIPOWER]
N-channel MOSFET; N沟道MOSFET
| 型号： | SWD30N06 |
| 厂家： | 
XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. |
| 描述： | N-channel MOSFET |
| 文件： | 总7页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SAMWIN
SW30N06
N-channel MOSFET
BVDSS : 60V
TO-220
TO-251
TO-252
Features
ID
: 30A
■ High ruggedness
■ RDS(ON) (Max 0.036 Ω)@VGS=10V
■ Gate Charge (Typ 20nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
RDS(ON) : 0.036 ohm
1
2
1
2
1
3
2
3
3
2
1. Gate 2. Drain 3. Source
1
General Description
These N-channel enhancement mode power field effect transistors are produced using
SAMWIN’s proprietary, planar stripe, DMOS technology.
3
This advanced technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers
Order Codes
Item
Sales Type
SW P 30N06
SW I 30N06
SW D 30N06
Marking
Package
TO-220
TO-251
TO-252
Packaging
TUBE
1
2
3
SW30N06
SW30N06
SW30N06
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDSS
ID
Drain to Source Voltage
60
30
V
A
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
14
A
IDM
VGS
EAS
Drain current pulsed
(note 1)
120
A
Gate to Source Voltage
± 20
178
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
4.0
7.0
44
PD
TSTG, TJ
TL
0.57
W/oC
oC
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
oC
Thermal characteristics
Value
Typ.
Symbol
Parameter
Unit
Min.
Max.
2.85
50
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
oC/W
oC/W
oC/W
Thermal resistance, Junction to ambient
110
May. 2011. Rev. 3.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
SW30N06
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
60
-
-
-
-
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
0.06
V/oC
/ ΔTJ
coefficient
VDS=60V, VGS=0V
VDS=48V, TC=125oC
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
-
-
-
-
-
-
-
-
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
50
100
-100
Gate to source leakage current, forward
Gate to source leakage current, reverse
IGSS
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 15A
2.0
-
4.0
V
0.027
0.036
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
580
220
60
9
760
280
80
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
pF
ns
65
40
37
20
5
VDS=30V, ID=15A, RG=25Ω
td(off)
tf
Turn off delay time
Fall time
Qg
Total gate charge
Gate-source charge
Gate-drain charge
26
-
Qgs
Qgd
VDS=48V, VGS=10V, ID=30A
nC
10
-
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
30
120
1.4
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=30A, VGS=0V
-
V
Trr
44
62
ns
uC
IS=30A, VGS=0V,
dIF/dt=100A/us
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 360uH, IAS = 30.0A, VDD = 25V, RG=25Ω, Starting TJ = 25oC
ISD ≤ 30.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
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SAMWIN
SW30N06
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
102
102
101
100
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
101
175oC
25oC
-55oC
*. Notes :
1. 250us Pulse Test
2. TC = 25O
*. Notes :
1. VDS =VGS
C
2. 250us Pulse Test
100
10-1
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs.
diode forward voltage
100
102
80
VGS = 10V
60
VGS = 20V
101
40
20
175OC
25OC
*. Notes :
1. VGS = 0V
*. Note : TJ = 25O
C
2. 250us Pulse Test
100
0.2
0
0
20
40
60
80
100
120
140
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage[V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
12
1500
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
VDS = 48V
VDS = 30V
10
Crss=Cgd
8
1000
*. Notes :
1. VGS = 0V
Ciss
2. f=1MHz
6
4
2
Coss
500
Crss
*. Note : ID = 30.0 A
20
0
0
0
5
10
15
25
0
5
10
15
20
25
30
35
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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SAMWIN
SW30N06
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
*. Notes :
1. VGS = 0 V
0.9
0.8
*. Notes :
1. VGS = 10 V
2. ID = 250 uA
2. ID = 15 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area
103
35
30
25
20
15
10
5
Operation in This Area
is Limited by R DS(on)
102
100us
1 ms
10 ms
101
100
10-1
DC
*. Notes :
1. TC = 25 o
C
2. TJ = 175 o
C
3. Single Pulse
0
25
50
75
100
125
150
175
10-1
100
101
102
TC' Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Fig. 11. Transient thermal response curve
100
D=0.5
0.2
0.1
*. Notes :
1. Z¥èJC(t) = 1.78OC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z¥èJC(t)
0.05
10-1
0.02
0.01
t1
single pulse
t2
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
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4/7
SAMWIN
SW30N06
Fig. 12. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
VDS
QGD
QGS
DUT
VGS
1mA
Charge
Fig. 13. Switching time test circuit & waveform
VDS
90%
RL
VDS
RG
VDD
10%
10%
td(on)
VIN
tf
td(off)
10VIN
DUT
tr
tON
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
BVDSS
1
2
L X IAS2 X
EAS =
BVDSS - VDD
L
BVDSS
IAS
IAS
VDS
RG
VDD
ID(t)
DUT
10VIN
VDS(t)
time
tp
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SAMWIN
SW30N06
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
-
VGS (DRIVER)
VDS
L
di/dt
IS
IS (DUT)
IRM
VDS
RG
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
10VGS
VDD
VDS (DUT)
VF
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
SW30N06
REVISION HISTORY
Revision No.
Changed Characteristics
Responsible
Date
Issuer
REV 1.0
REV 2.0
Origination, First Release
Alice Nie
2007.12.05
2011.03.24
XZQ
XZQ
Updated the format of datasheet and added
Order Codes.
Alice Nie
Alice Nie
Added TO-220 package spec
2011.05.05
XZQ
REV 3.0
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