SWD4N65 [SEMIPOWER]
N-channel MOSFET (TO-251 , TO-252); N沟道MOSFET （TO- 251 ，TO- 252）
| 型号： | SWD4N65 |
| 厂家： | 
XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. |
| 描述： | N-channel MOSFET (TO-251 , TO-252) |
| 文件： | 总7页 (文件大小：749K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SAMWIN
SW4N65
N-channel MOSFET
TO-251
TO-252
BVDSS : 650V
Features
ID
: 4.0A
■ High ruggedness
RDS(ON) : 2.6ohm
■ RDS(ON) (Max 2.6 Ω)@VGS=10V
■ Gate Charge (Typ 19nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
2
1
1
2
3
2
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
3
Order Codes
Item
1
Sales Type
SW I 4N65
SW D 4N65
Marking
SW4N65
SW4N65
Package
TO-251
TO-252
Packaging
TUBE
REEL
2
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-251
650
VDSS
ID
Drain to Source Voltage
V
A
Continuous Drain Current (@TC=25oC)
4.0
Continuous Drain Current (@TC=100oC)
Drain current pulsed
2.6
A
IDM
VGS
EAS
(note 1)
16
A
Gate to Source Voltage
± 30
143
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
10.6
4.5
54
PD
TSTG, TJ
TL
0.43
-55 ~ + 150
W/oC
oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
oC
Thermal characteristics
Value
Typ.
Symbol
Parameter
Unit
Min.
Max.
2.3
Rthjc
Rthja
Thermal resistance, Junction to case
Thermal resistance, Junction to ambient
oC/W
oC/W
83
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
SW4N65
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
650
-
-
-
-
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
0.53
V/oC
/ ΔTJ
coefficient
VDS=650V, VGS=0V
VDS=520V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
-
-
-
-
-
-
-
-
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
10
100
-100
Gate to source leakage current, forward
Gate to source leakage current, reverse
IGSS
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 2.0A
2.0
-
4.0
2.6
V
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
570
70
740
90
24
52
102
214
78
28
-
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
pF
ns
20
21
46
VDS=320V, ID=4.0A, RG=25Ω
td(off)
tf
Turn off delay time
Fall time
102
34
Qg
Total gate charge
Gate-source charge
Gate-drain charge
18.6
3.0
6.0
Qgs
Qgd
VDS=520V, VGS=10V, ID=4.0A
nC
-
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
4
16
1.4
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=4.0A, VGS=0V
-
V
Trr
390
1.6
ns
uC
IS=4.0A, VGS=0V,
dIF/dt=100A/us
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 19mH, IAS = 4.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
ISD ≤ 4.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
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SAMWIN
SW4N65
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
101
101
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100
10-1
10-2
Bottom : 5.5 V
100
150oC
25oC
-55oC
،
ط
Notes : ،
ط
Notes : 1. VDS = 50V
1. 250¥
ى
s Pulse Test 2. TC = 25،
ة
2. 250¥
ى
s Pulse Test 10-1
10-1
100
101
2
3
4
5
6
7
8
9
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Fig. 3. On-resistance variation vs.
Fig. 4. On state current vs.
diode forward voltage
drain current and gate voltage
6
5
4
3
2
1
0
101
VGS = 10V
150،
ة
25،
ة
100
VGS = 20V
،
ط
Notes : 1. VGS = 0V
،
ط
Note : TJ = 25،ة
2. 250¥
ى
s Pulse Test 10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
2
4
6
8
10
12
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Fig. 5. Capacitance characteristics
Fig. 6. Gate charge characteristics
(Non-Repetitive)
750
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
10
VDS = 325V
Ciss
500
250
0
8
VDS = 520V
،
ط
Notes : 1. VGS = 0V
2. f=1MHz
6
4
2
Coss
Crss
*. Note : ID = 4.0A
16
0
0
4
8
12
20
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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SAMWIN
SW4N65
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
،
ط
Notes : 1. VGS = 0 V
0.9
2. ID = 250 ¥
ى
A 0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area
102
5
Operation in This Area
is Limited by R DS(on)
4
3
2
1
0
101
100 s
1 ms
10 ms
100
10-1
10-2
DC
،
ط
Notes : 1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
100
101
102
103
25
50
75
100
125
150
TC' Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Fig. 11. Transient thermal response curve
100
D=0.5
0.2
0.1
،
ط
Notes : 1. Z¥èJC(t) = 1.25 ،
ة
/W Max. 2. Duty Factor, D=t1/t2
10-1
3. TJM - TC = PDM * Z¥èJC(t)
0.05
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
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SAMWIN
SW4N65
Fig. 12. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
VDS
QGD
QGS
DUT
VGS
1mA
Charge
Fig. 13. Switching time test circuit & waveform
VDS
90%
RL
VDS
RG
VDD
10%
10%
td(on)
VIN
tf
td(off)
10VIN
DUT
tr
tON
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
BVDSS
1
2
L X IAS2 X
EAS =
BVDSS - VDD
L
BVDSS
IAS
IAS
VDS
RG
VDD
ID(t)
DUT
10VIN
VDS(t)
time
tp
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SAMWIN
SW4N65
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
-
VGS (DRIVER)
VDS
L
di/dt
IS
IS (DUT)
IRM
VDS
RG
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
10VGS
VDD
VDS (DUT)
VF
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
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SAMWIN
SW4N65
REVISION HISTORY
Revision No.
Changed Characteristics
Responsible
Date
Issuer
REV 1.0
REV 2.0
Origination, First Release
Alice Nie
2007.12.05
2011.03.24
XZQ
XZQ
Updated the format of datasheet and added
Order Codes.
Alice Nie
WWW.SEMIPOWER.COM.CN
西安芯派电子科技有限公司
深圳市南方芯源科技有限公司
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