SWD50N06A [SEMIPOWER]
N-channel MOSFET (TO-251 , TO-252); N沟道MOSFET （TO- 251 ，TO- 252）
| 型号： | SWD50N06A |
| 厂家： | 
XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. |
| 描述： | N-channel MOSFET (TO-251 , TO-252) |
| 文件： | 总7页 (文件大小：490K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SAMWIN
SW50N06A
N-channel MOSFET
BVDSS : 60V
TO-251
TO-252
Features
ID
: 50A
■ High ruggedness
■ RDS(ON) (Max 0.023 Ω)@VGS=10V
■ Gate Charge (Typ 30nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
RDS(ON) : 0.023 ohm
1
2
3
1
2
3
2
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
3
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching mode power appliances.
Order Codes
Item
1
Sales Type
SW I 50N06A
SW D 50N06A
Marking
Package
TO-251
TO-252
Packaging
TUBE
SW50N06A
SW50N06A
2
REEL
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDSS
ID
Drain to Source Voltage
60
50
V
A
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
34
A
IDM
VGS
EAS
(note 1)
200
A
Gate to Source Voltage
± 20
780
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
W/oC
oC
EAR
dv/dt
13
7
108
PD
TSTG, TJ
TL
0.86
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Typ.
Symbol
Parameter
Unit
Min.
Max.
1.15
50
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to sink
oC/W
oC/W
oC/W
Thermal resistance, Junction to ambient
62.5
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
SW50N06A
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
60
-
-
-
-
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
0.06
V/oC
/ ΔTJ
coefficient
VDS=60V, VGS=0V
VDS=48V, TC=125oC
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
-
-
-
-
-
-
-
-
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
100
100
-100
Gate to source leakage current, forward
Gate to source leakage current, reverse
IGSS
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 25A
2.0
-
4.0
V
0.016
0.023
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
900
430
80
1220
550
90
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
pF
ns
50
165
78
VDS=30V, ID=25A, RG=25Ω
td(off)
tf
Turn off delay time
Fall time
60
Qg
Total gate charge
Gate-source charge
Gate-drain charge
36
45
-
Qgs
Qgd
VDS=48V, VGS=10V, ID=50A
8.6
12
nC
-
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
50
200
1.5
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=50A, VGS=0V
-
V
Trr
95
250
ns
uC
IS=50A, VGS=0V,
dIF/dt=100A/us
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 300uH, IAS = 50.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
ISD ≤ 50.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
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SAMWIN
SW50N06A
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
103
VGS[ V ] Top 15
102
101
100
10
8
7
6
5.5
102
101
100
25[،
ة
] 5
-55[،
ة
] 125[،
ة
] Bottom 4.5
،
ط
Note VDS = 30 [ V ]
،
ط
Note 1. 250§
ء
Pulse Test 2. TC = 25،
ة
250§
ء
Pulse Test 10-1
100
101
2
4
6
8
10
VDS[V], Drain to Source Voltage
Vgs[ v ], Gate-Source Voltage
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs.
diode forward voltage
70
60
50
40
102
101
VGS=10[V]
30
Tj=175oC
Tj=25oC
20
VGS=20[V]
،
ط
Note VGS = 0V
10
0
،
ط
Note TJ = 25،
ة
250§
ء
Pulse Test 100
0.2
0
50
100
150
200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID[ A ], Drain Current
Vsd[ V ], Source-Drain Voltage
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
12
10
3000
1. Ciss = Cgs + Cgd (Cds = shorted)
2. COss = Cds + Cgd
Coss
2500
2000
1500
1000
500
3. Crss = Cgd
VDS =12V
VDS = 30V
،
ط
Note 1. VGS = 0[V]
8
Ciss
VDS = 48V
2. Frequency = 1[MHz]
6
4
2
0
Crss
،
ط
Note ID = 50A
0
10-1
100
101
0
5
10
15
20
25
30
35
40
45
VDS[ V ], Drain to Source Voltage
Gate Charge [nC]
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SAMWIN
SW50N06A
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
،
ط
Note 1. Vgs = 10V
2. Id = 25A
0.9
،
ط
Note 1. VGS= 0V
2. ID = 250§
ث
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
Tj, Junction temperature[oC]
Temperature [،
ة
] Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area
100us
Operating Area limited
by RDS(ON)
1ms
10ms
102
101
100
DC
Case Temp. @ 175،
ة
Junction Temp.@ 25،
ة
Single Pulse
،
ط
See Figure 11. 10-1
100
101
102
VDS[ V ], Drain to source Voltage
Fig. 11. Transient thermal response curve
100
10-1
10-2
PDM
t1
t2
<Note>
1. Z¥
ب
JC(t) = 1.25،ة
/W Max. 2. Duty Factor, D=t1/t2
3. Z¥
ب
JC(t) = (TJM - TC)/PD 10-5
10-4
10-3
10-2
10-1
t1[ sec ], Square Wave Pulse Duration
100
101
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SAMWIN
SW50N06A
Fig. 12. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
VDS
QGD
QGS
DUT
VGS
1mA
Charge
Fig. 13. Switching time test circuit & waveform
VDS
90%
RL
VDS
RG
VDD
10%
10%
td(on)
VIN
tf
td(off)
10VIN
DUT
tr
tON
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
BVDSS
1
2
L X IAS2 X
EAS =
BVDSS - VDD
L
BVDSS
IAS
IAS
VDS
RG
VDD
ID(t)
DUT
10VIN
VDS(t)
time
tp
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SAMWIN
SW50N06A
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
-
VGS (DRIVER)
VDS
L
di/dt
IS
IS (DUT)
IRM
VDS
RG
Diode reverse current
Diode recovery dv/dt
VDD
Same type
as DUT
10VGS
VDD
VDS (DUT)
VF
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
SW50N06A
REVISION HISTORY
Revision No.
Changed Characteristics
Responsible
Date
Issuer
REV 1.0
REV 2.0
Origination, First Release
Alice Nie
2007.12.05
XZQ
Updated the format of datasheet and added
Order Codes.
Alice Nie
2011.03.24
XZQ
WWW.SEMIPOWER.COM.CN
西安芯派电子科技有限公司
深圳市南方芯源科技有限公司
地址：西安市高新区高新一路25号创新大厦MF6
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