SWD630 [SEMIPOWER]
N-channel MOSFET; N沟道MOSFET
| 型号： | SWD630 |
| 厂家： | 
XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. |
| 描述： | N-channel MOSFET |
| 文件： | 总7页 (文件大小：746K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SAMWIN
SW630
N-channel MOSFET
TO-220F
TO-220
TO-252
Features
BVDSS : 200V
■ High ruggedness
ID
: 10A
■ RDS(ON) (Max 0.4 Ω)@VGS=10V
■ Gate Charge (Typ 20nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
RDS(ON) : 0.4ohm
1
2
3
1
1
2
2
3
3
2
1. Gate 2. Drain 3. Source
General Description
1
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at high efficient DC to DC converter block and SMPS.
3
It’s typical application is TV and monitor.
Order Codes
Item
Sales Type
SW P 630
SW F 630
SW D 630
Marking
SW630
SW630
SW630
Package
TO-220
TO-220F
TO-252
Packaging
1
2
3
TUBE
TUBE
REEL
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
TO-220F
VDSS
ID
Drain to Source Voltage
200
V
A
Continuous Drain Current (@TC=25oC)
10
10.0*
5.5*
Continuous Drain Current (@TC=100oC)
5.5
A
IDM
VGS
EAS
Drain current pulsed
(note 1)
40
± 30
324
8.8
5
A
Gate to Source Voltage
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
88
38*
0.3
PD
TSTG, TJ
TL
0.7
W/oC
oC
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
300
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220
1.42
TO-220F
3.33
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
oC/W
oC/W
oC/W
0.5
Thermal resistance, Junction to ambient
62.5
Jun. 2011. Rev. 3.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
SW630
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
200
-
-
-
-
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
0.17
V/oC
/ ΔTJ
coefficient
VDS=200V, VGS=0V
VDS=160V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
-
-
-
-
-
-
-
-
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
20
100
-100
Gate to source leakage current, forward
Gate to source leakage current, reverse
IGSS
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 5A
2.0
-
4.0
0.4
V
0.24
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
770
120
35
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
pF
ns
40
140
150
140
30
VDS=100V, ID=5.0A, RG=25Ω
td(off)
tf
Turn off delay time
Fall time
Qg
Total gate charge
Gate-source charge
Gate-drain charge
20
4
Qgs
Qgd
VDS=160V, VGS=10V, ID=10A
nC
8
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
10
40
1.5
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=10A, VGS=0V
-
V
Trr
140
0.77
ns
uC
IS=10A, VGS=0V,
dIF/dt=100A/us
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 6.3mH, IAS = 10A, VDD = 50V, RG=50Ω, Starting TJ = 25oC
ISD ≤ 10A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
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SAMWIN
SW630
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101
100
10-1
101
Bottom : 5.0 V
150oC
25oC
100
-55oC
،
ط
Notes : 1. VDS = 30V
،
ط
Notes : 1. 250¥
ى
s Pulse Test 2. TC = 25،
ة
2. 250¥
ى
s Pulse Test 10-1
100
101
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig. 3. On-resistance variation vs.
Fig. 4. On state current vs.
diode forward voltage
drain current and gate voltage
2.0
1.5
1.0
0.5
0.0
101
VGS = 10V
100
150،
ة
25،
ة
،
ط
Notes : 1. VGS = 0V
VGS = 20V
2. 250¥
ى
s Pulse Test ،
ط
Note : TJ = 25،ة
10-1
0.2
0
6
12
18
24
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
1250
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
VDS = 200V
Crss=Cgd
10
VDS = 125V
1000
750
500
250
0
،
ط
Notes : 1. VGS = 0V
Coss
2. f=1MHz
VDS = 50V
8
6
4
2
0
Ciss
،
ط
Note : ID = 10A Crss
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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SAMWIN
SW630
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
،
ط
Notes : 1. VGS = 0 V
0.9
0.8
،
ط
Notes : 1. VGS = 10 V
2. ID = 250 ¥
ى
A 2. ID = 4.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area
102
10
8
Operation in This Area
is Limited by R DS(on)
100 s
101
1 ms
6
10 ms
DC
4
100
2
،
ط
Notes : 1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
10-1
100
0
25
50
75
100
125
150
101
102
103
TC' Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Fig. 11. Transient thermal response curve
101
D=0.5
100
0.2
،
ط
Notes : 1. Z¥èJC(t) = 1.60 ،
ة
/W Max. 0.1
0.05
0.02
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z¥èJC(t)
10-1
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
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SAMWIN
SW630
Fig. 12. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
VDS
QGD
QGS
DUT
VGS
1mA
Charge
Fig. 13. Switching time test circuit & waveform
VDS
90%
RL
VDS
RG
VDD
10%
10%
td(on)
VIN
tf
td(off)
10VIN
DUT
tr
tON
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
BVDSS
1
2
L X IAS2 X
EAS =
BVDSS - VDD
L
BVDSS
IAS
IAS
VDS
RG
VDD
ID(t)
DUT
10VIN
VDS(t)
time
tp
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SAMWIN
SW630
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
-
VGS (DRIVER)
VDS
L
di/dt
IS
IS (DUT)
IRM
VDS
RG
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
10VGS
VDD
VDS (DUT)
VF
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
SW630
REVISION HISTORY
Revision No.
Changed Characteristics
Responsible
Date
Issuer
REV 1.0
REV 2.0
Origination, First Release
Alice Nie
2007.12.05
XZQ
Updated the format of datasheet and added
Order Codes.
Alice Nie
Alice Nie
2011.03.24
2011.06.30
XZQ
XZQ
REV 3.0
Added TO-252 information.
WWW.SEMIPOWER.COM.CN
西安芯派电子科技有限公司
深圳市南方芯源科技有限公司
地址：西安市高新区高新一路25号创新大厦MF6
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