SWD6N65_技术文档

SAMWIN

SW6N65

N-channel MOSFET

BV_DSS: 600V

TO-220F

TO-251

TO-252

Features

I_D

: 6A

■ High ruggedness

■ R_DS(ON)(Max 1.5Ω)@V_GS=10V

■ Gate Charge (Typ 20nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

R_DS(ON):1.5ohm

1

2

1

2

1

3

2

3

2

1. Gate 2. Drain 3. Source

1

General Description

These N-channel enhancement mode power field effect transistors are produced using

SAMWIN’s proprietary, planar stripe, DMOS technology.

3

This advanced technology enable power MOSFET to have better characteristics, such as

fast switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers

Order Codes

Item

Sales Type

SW F 6N65

SW I 6N65

SW D 6N65

Marking

SW6N65

Package

TO-220F

TO-251

TO-252

Packaging

1

2

3

TUBE

REEL

Absolute maximum ratings

Value

TO-251/252

Symbol

Parameter

Unit

TO-220F

V_DSS

I_D

Drain to Source Voltage

600

6.0

V

A

Continuous Drain Current (@T_C=25^oC)

Drain current pulsed

I_DM

(note 1)

24

A

V_GS

E_AS

E_AR

dv/dt

Gate to Source Voltage

± 30

250

10.6

4.5

V

Single pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode Recovery dv/dt

Total power dissipation (@T_C=25^oC)

Derating Factor above 25^oC

(note 2)

(note 1)

(note 3)

mJ

V/ns

W

64

P_D

T_STG, T_J

T_L

0.45

W/^oC

^oC

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

275

^oC

Thermal characteristics

Value

Typ.

Symbol

Parameter

Unit

Min.

Max.

3.58

R_thjc

R_thcs

R_thja

Thermal resistance, Junction to case

Thermal resistance, Case to Sink

^oC/W

0.5

Thermal resistance, Junction to ambient

62.5

Jun. 2011. Rev. 2.0

1/7

SAMWIN

SW6N65

Electrical characteristic ( T_C= 25^oC unless otherwise specified )

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Off characteristics

BV_DSS

Drain to source breakdown voltage

V_GS=0V, I_D=250uA

600

-

V

ΔBV_DSSBreakdown voltage temperature

I_D=250uA, referenced to 25^oC

0.5

V/^oC

/ ΔT_J

coefficient

V_DS=600V, V_GS=0V

V_DS=480V, T_C=125^oC

V_GS=30V, V_DS=0V

V_GS=-30V, V_DS=0V

-

1

uA

nA

I_DSS

Drain to source leakage current

10

100

-100

Gate to source leakage current, forward

Gate to source leakage current, reverse

I_GSS

On characteristics

V_GS(TH)Gate threshold voltage

R_DS(ON)Drain to source on state resistance

Dynamic characteristics

V_DS=V_GS, I_D=250uA

V_GS=10V, I_D= 3A

2.0

-

4.0

1.5

V

1.3

Ω

C_iss

C_oss

C_rss

t_d(on)

tr

Input capacitance

600

75

700

95

12

40

100

160

165

25

-

Output capacitance

Reverse transfer capacitance

Turn on delay time

Rising time

V_GS=0V, V_DS=25V, f=1MHz

pF

ns

9

20

28

V_DS=300V, I_D=6A

t_d(off)

t_f

Turn off delay time

Fall time

45

48

Q_g

Total gate charge

Gate-source charge

Gate-drain charge

16.5

3.8

7.5

Q_gs

Q_gd

V_DS=480V, V_GS=10V, I_D=6A

nC

-

Source to drain diode ratings characteristics

Symbol

Parameter

Continuous source current

Pulsed source current

Test conditions

Min.

Typ.

Max. Unit

I_S

-

6.0

24.0

1.4

-

A

Integral reverse p-n Junction

diode in the MOSFET

I_SM

V_SD

Diode forward voltage drop.

Reverse recovery time

I_S=6A, V_GS=0V

-

V

T_rr

250

1.5

ns

uC

I_S=6A, V_GS=0V,

dI_F/dt=100A/us

Q_rr

Breakdown voltage temperature

-

※. Notes

1.

2.

3.

4.

5.

Repeatitive rating : pulse width limited by junction temperature.

L = 360uH, I_AS= 30.0A, V_DD= 25V, R_G=25Ω, Starting T_J= 25^oC

I_SD≤ 30.0A, di/dt = 300A/us, V_DD≤ BV_DSS, Staring T_J=25^oC

Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%

Essentially independent of operating temperature.

2/7

SW6N65

SAMWIN

Fig. 1. On-state characteristics

Fig. 2. Transfer characteristics

Fig. 3. On-resistance variation vs.

drain current and gate voltage

Fig. 4. On state current vs.

diode forward voltage

Fig. 5. Capacitance characteristics

(Non-Repetitive)

Fig. 6. Gate charge characteristics

3/7

SW6N65

SAMWIN

Fig 7. Breakdown Voltage Variation

vs. Junction Temperature

Fig. 8. On resistance variation

vs. junction temperature

Fig. 9. Maximum drain current vs.

case temperature.

Fig. 10. Maximum safe operating area

Fig. 11. Transient thermal response curve

4/7

SAMWIN

SW6N65

Fig. 12. Gate charge test circuit & waveform

V_GS

Same type

as DUT

Q_G

V_DS

Q_GD

Q_GS

DUT

V_GS

1mA

Charge

Fig. 13. Switching time test circuit & waveform

V_DS

90%

R_L

V_DS

R_G

V_DD

10%

t_d(on)

V_IN

t_f

t_d(off)

10V_IN

DUT

t_r

t_ON

t_OFF

Fig. 14. Unclamped Inductive switching test circuit & waveform

BV_DSS

1

2

L X I_AS²X

EAS =

BV_DSS- V_DD

L

BV_DSS

I_AS

V_DS

R_G

V_DD

I_D(t)

DUT

10V_IN

V_DS(t)

time

t_p

5/7

SAMWIN

SW6N65

Fig. 15. Peak diode recovery dv/dt test circuit & waveform

DUT

10V

+

-

V_GS(DRIVER)

V_DS

L

di/dt

I_S

I_S(DUT)

I_RM

V_DS

R_G

Diode reverse current

V_DD

Diode recovery dv/dt

Same type

as DUT

10V_GS

V_DD

V_DS(DUT)

V_F

*. dv/dt controlled by RG

*. Is controlled by pulse period

Body diode forward voltage drop

6/7

SW6N65

SAMWIN

REVISION HISTORY

Revision No.

Changed Characteristics

Responsible

Date

Issuer

REV 1.0

REV 2.0

Origination, First Release

Alice Nie

2010.12.05

XZQ

Updated the format of datasheet and added

Order Codes.

Alice Nie

2011.06.02

XZQ

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7/7


型号：	SWD6N65
厂家：	XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD.
描述：	N-channel MOSFET N沟道MOSFET
文件：	总7页 (文件大小：558K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SWD6N65 [SEMIPOWER]

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