SWD3N80A [SEMIPOWER]
N-channel MOSFET; N沟道MOSFET
| 型号： | SWD3N80A |
| 厂家： | 
XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. |
| 描述： | N-channel MOSFET |
| 文件： | 总7页 (文件大小：950K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SAMWIN
SW3N80A
N-channel MOSFET
TO-220F
TO-220
TO-252
BVDSS : 800V
Features
ID
: 3.0A
■ High ruggedness
RDS(ON) : 4.5ohm
■ RDS(ON) (Max 4.5 Ω)@VGS=10V
■ Gate Charge (Typ 26nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
2
1
1
2
2
1
3
2
3
3
1
1. Gate 2. Drain 3. Source
General Description
3
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
Order Codes
Item
Sales Type
SW P 3N80A
SW F 3N80A
SW D 3N80A
Marking
Package
TO-220
TO-220F
TO-252
Packaging
1
2
3
SW3N80A
SW3N80A
SW3N80A
TUBE
TUBE
REEL
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220/TO-
220F
TO-252
VDSS
ID
Drain to Source Voltage
800
V
A
Continuous Drain Current (@TC=25oC)
3.0
1.9
3.0*
1.9*
Continuous Drain Current (@TC=100oC)
Drain current pulsed
A
IDM
VGS
EAS
(note 1)
12
± 30
310
10
A
Gate to Source Voltage
V
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 2)
(note 1)
(note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
4.5
106/39*
54
PD
TSTG, TJ
TL
0.85/0.31
0.43
W/oC
oC
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
Symbol
Parameter
Unit
TO-220/TO-220F
TO-252
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
1.18/3.21
0.5/-
2.31
-
oC/W
oC/W
oC/W
Thermal resistance, Junction to ambient
62.5
100
Jan. 2012. Rev. 3.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
SW3N80A
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
800
-
-
-
-
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
1.0
V/oC
/ ΔTJ
coefficient
VDS=800V, VGS=0V
VDS=640V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
-
-
-
-
-
-
-
-
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
20
100
-100
Gate to source leakage current, forward
Gate to source leakage current, reverse
IGSS
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 1.5A
3.0
-
5.0
4.5
V
3.8
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
540
55
6
700
70
7.5
40
95
55
75
35
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
pF
ns
20
28
45
48
26
3.5
8.0
VDS=400V, ID=3.0A, RG=25Ω
td(off)
tf
Turn off delay time
Fall time
Qg
Total gate charge
Gate-source charge
Gate-drain charge
Qgs
Qgd
VDS=640V, VGS=10V, ID=3.0A
nC
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
3
12
1.4
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=3.0A, VGS=0V
-
V
Trr
640
4.0
ns
uC
IS=3.0A, VGS=0V,
dIF/dt=100A/us
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 67mH, IAS = 3.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
ISD ≤ 3.0A, di/dt = 200A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
SW3N80A
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
101
101
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100
10-1
10-2
Bottom : 5.5 V
100
150oC
25oC
-55oC
،
ط
Notes : ،
ط
Notes : 1. VDS = 50V
1. 250¥
ى
s Pulse Test 2. TC = 25،
ة
2. 250¥
ى
s Pulse Test 10-1
10-1
100
101
2
3
4
5
6
7
8
9
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Fig. 3. On-resistance variation vs.
Fig. 4. On state current vs.
diode forward voltage
drain current and gate voltage
101
12
10
8
VGS = 10V
150،
ة
25،
ة
100
6
VGS = 20V
4
2
،
ط
Notes : 1. VGS = 0V
2. 250¥
ى
s Pulse Test ،
ط
Note : TJ = 25،ة
10-1
0.2
0
0
1
2
3
4
5
6
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
750
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
VDS = 240V
Crss=Cgd
VDS = 400V
10
VDS = 640V
Ciss
500
250
0
8
،
ط
Notes : 1. VGS = 0V
2. f=1MHz
6
4
2
Coss
Crss
،
ط
Note : ID = 3.0 A 0
0
5
10
15
20
25
30
35
0
4
8
12
16
20
24
28
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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SAMWIN
SW3N80A
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 8. On resistance variation
vs. junction temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
،
ط
Notes : 1. VGS = 0 V
،
ط
Notes : 1. VGS = 10 V
2. ID = 250 ¥
ى
A 2. ID = 1.5 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 10. Maximum safe operating area
3
2
1
0
Operation in This Area
is Limited by R DS(on)
101
100 s
1 ms
10 ms
100
10-1
10-2
DC
،
ط
Notes : 1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
100
101
102
103
25
50
75
100
125
150
TC' Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Fig. 11. Transient thermal response curve
D=0.5
100
0.2
،
ط
Notes : 1. Z¥èJC(t) = 2.6 ،
ة
/W Max. 0.1
2. Duty Factor, D=t1/t2
0.05
3. TJM - TC = PDM * Z¥èJC(t)
10-1
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
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SAMWIN
SW3N80A
Fig. 12. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
VDS
QGD
QGS
DUT
VGS
1mA
Charge
Fig. 13. Switching time test circuit & waveform
VDS
90%
RL
VDS
RG
VDD
10%
10%
td(on)
VIN
tf
td(off)
10VIN
DUT
tr
tON
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
BVDSS
1
2
L X IAS2 X
EAS =
BVDSS - VDD
L
BVDSS
IAS
IAS
VDS
RG
VDD
ID(t)
DUT
10VIN
VDS(t)
time
tp
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SAMWIN
SW3N80A
Fig. 15. Peak diode recovery dv/dt test circuit & waveform
DUT
10V
+
-
VGS (DRIVER)
VDS
L
di/dt
IS
IS (DUT)
IRM
VDS
RG
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
10VGS
VDD
VDS (DUT)
VF
*. dv/dt controlled by RG
*. Is controlled by pulse period
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
SW3N80A
REVISION HISTORY
Revision No.
Changed Characteristics
Responsible
Date
Issuer
REV 1.0
REV 2.0
Origination, First Release
Alice Nie
2007.12.05
2011.03.24
XZQ
XZQ
Updated the format of datasheet and added
Order Codes.
Alice Nie
Alice Nie
Added TO-252 Package information
2012.01.31
XZQ
REV 3.0
WWW.SEMIPOWER.COM.CN
西安芯派电子科技有限公司
深圳市南方芯源科技有限公司
地址：深圳市福田区天安数码城时代大厦A座2005
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电话：029 - 88253717 传真：029 - 88251977
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