SEMIX302GAR066HD [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块型号: | SEMIX302GAR066HD |
厂家: | SEMIKRON INTERNATIONAL |
描述: | Trench IGBT Modules |
文件: | 总4页 (文件大小:887K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMiX 302GB066HD
ꢋ
ꢏ '()ꢕ5 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Absolute Maximum Ratings
Symbol Conditions
ꢍꢐꢈꢅ
Values
Units
IGBT
ꢔꢕꢖꢉ
0--
40- ꢗ'(-ꢘ
4:- ꢗ4--ꢘ
0--
ꢔ
8
$
$
$
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ꢕ
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8
ꢕ
ꢑꢚ ꢏ & ꢃꢈ
8
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ꢘ
< =- >>> ? &9( ꢗ&'(ꢘ
)ꢕ
ꢔꢊꢈꢂꢒ
8ꢕ5 & ꢃꢊꢆ>
=---
ꢔ
®
SEMiX 2
Inverse diode
$
$
$
ꢋꢍ ꢏ '( ꢗ7-ꢘ )ꢕ5 ꢋ, ꢏ &(- )ꢕ
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44- ꢗ'=-ꢘ
0--
8
8
8
@
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Trench IGBT Modules
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8
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SEMiX 302GB066HD
SEMiX 302GAL066HD
SEMiX 302GAR066HD
Target Data
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ꢏ '()ꢕ5 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
min.
typ.
max. Units
ꢔ3ꢖꢗꢑꢎꢘ
ꢔ3ꢖ ꢏ ꢔꢕꢖ5 $ꢕ ꢏ 4 ꢃ8
(57
ꢔ
$
ꢔ3ꢖ ꢏ -5 ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ5 ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ
-5&
ꢃ8
ꢔ
ꢕꢖꢉ
ꢔꢕꢖꢗꢋAꢘ
ꢌꢕꢖ
ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ
-5: ꢗ-57(ꢘ
&57 ꢗ'57ꢘ
& ꢗ-5:ꢘ
4 ꢗ=ꢘ
ꢔ3ꢖ ꢏ &( ꢔ5 ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ
ꢃB
Features
ꢔꢕꢖꢗꢈꢐꢑꢘ
$ꢕꢆꢂꢃ ꢏ 4-- 85 ꢔ3ꢖ ꢏ &( ꢔ5
&5=( ꢗ&59ꢘ
&5: ꢗ'5&ꢘ
ꢔ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ5 ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
ꢕꢊꢅꢈ
ꢕꢂꢅꢈ
ꢕꢌꢅꢈ
Dꢕꢖ
ꢇꢆ%ꢅꢌ ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢆ%ꢊꢑꢊꢂꢆꢈ
&75(
&5'
ꢆ@
ꢆ@
ꢆ@
ꢆꢁ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢔ3ꢖ ꢏ -5 ꢔꢕꢖ ꢏ '( ꢔ5 ꢏ & !ꢁC
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
-5((
&7
Typical Applications
#
ꢑꢅꢌꢃꢊꢆꢐꢒ<ꢍꢎꢊꢚ5 ꢋꢍꢏ '( ꢗ&(-ꢘ )ꢕ
-59 ꢗ&ꢘ
ꢃB
ꢕꢕE?ꢖꢖE
!ꢐꢑꢌꢊ" ꢕꢂꢆꢛꢅꢌꢑꢅꢌ
#ꢅꢈꢂꢆꢐꢆꢑ $ꢆꢛꢅꢌꢑꢅꢌ
ꢕꢇꢌꢌꢅꢆꢑ ꢉꢂꢇꢌꢍꢅ $ꢆꢛꢅꢌꢑꢅꢌ
ꢀ
ꢀ
ꢀ
ꢑ%ꢗꢂꢆꢘFꢑꢌ
ꢔꢕꢕ ꢏ 4-- ꢔ5 $ꢕꢆꢂꢃ ꢏ 4-- 8
ꢔ3ꢖ ꢏ ;&(ꢔ
&&- F 7-
04' F 9-
ꢆꢈ
ꢆꢈ
ꢑ%ꢗꢂ ꢘFꢑ
ꢖꢂꢆ ꢗꢖꢂ
ꢘ
#3ꢂꢆ ꢏ #3ꢂ ꢏ 7 G5 ꢋ, ꢏ &(- )ꢕ
: ꢗ&'ꢘ
ꢃH
Remarks
Inverse Diode
ꢔ@ ꢏ ꢔꢖꢕ
$
@ꢆꢂꢃ ꢏ 4-- 82 ꢔ3ꢖ ꢏ - ꢔ2 ꢋ, ꢏ '( ꢗ&(-ꢘ
&5= ꢗ&5=ꢘ
&50
ꢔ
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ% ꢑꢂ
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ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ
& ꢗ-57(ꢘ
&54 ꢗ&57ꢘ
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&59
ꢔ
ꢃB
8
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ꢀ
ꢂꢌ ꢋ ꢏ&(-)ꢕ
$
$@ꢆꢂꢃ ꢏ 4-- 82 ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ
,
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75=
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Thermal characteristics
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#
#
ꢚꢅꢌ $3Jꢋ
-5&(
-5'(
KFL
KFL
KFL
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ꢚꢅꢌ $ꢆꢛꢅꢌꢈꢅ Mꢊꢂ%ꢅ
ꢚꢅꢌ @LM
ꢑꢎꢗ,<ꢍꢘM
ꢑꢎꢗ,<ꢍꢘ@M
#
ꢚꢅꢌ ꢃꢂ%ꢇꢒꢅ
-5-=(
KFL
ꢑꢎꢗꢍ<ꢈꢘ
Temperature sensor
#
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4='-
OG
K
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J'(F7(
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Mechanical data
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ꢑꢂ ꢎꢅꢐꢑꢈꢊꢆO ꢗ!(ꢘ F ꢂꢌ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ ꢗ!0ꢘ
4F'5(
( F(
Rꢃ
ꢄ
ꢙ
'(-
GB
GAL
GAR
1
24-11-2005 GES
© by SEMIKRON
SEMiX 302GB066HD
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
24-11-2005 GES
© by SEMIKRON
SEMiX 302GB066HD
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 Transient thermal impedance of FWD
Fig. 12 Typ. CAL diode peak reverse recovery current
Fig. 9 Transient thermal impedance of IGBT
Fig. 11 CAL diode forward characteristic
3
24-11-2005 GES
© by SEMIKRON
SEMiX 302GB066HD
Fig. 13 Typ. CAL diode recovered charge
3J
ꢚꢊꢆꢂꢇꢑ ꢉꢖ!ꢊS '
ꢕꢐꢈꢅ ꢉꢖ!ꢊS '
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
24-11-2005 GES
© by SEMIKRON
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