SEMIX302GB066HDS_08 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块型号: | SEMIX302GB066HDS_08 |
厂家: | SEMIKRON INTERNATIONAL |
描述: | Trench IGBT Modules |
文件: | 总5页 (文件大小:353K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMiX302GB066HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
600
379
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
286
ICnom
ICRM
VGES
300
ICRM = 2xICnom
600
-20 ... 20
SEMiX®2s
VCC = 360 V
VGE ≤ 15 V
Tj = 150 °C
VCES ≤ 600 V
tpsc
6
µs
°C
Trench IGBT Modules
Tj
-40 ... 175
Inverse diode
SEMiX302GB066HDs
Tc = 25 °C
Tc = 80 °C
IF
419
307
A
A
Tj = 175 °C
Preliminary Data
IFnom
IFRM
IFSM
Tj
300
A
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
600
A
1400
A
-40 ... 175
°C
Module
It(RMS)
Tstg
• UL recognised file no. E63532
600
-40 ... 125
4000
A
°C
V
Typical Applications
Visol
AC sinus 50Hz, t = 1 min
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
IC = 300 A
VCE(sat)
Tj = 25 °C
1.45
1.70
1.9
2.1
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.9
0.85
1.8
1
V
V
0.9
3.0
4.0
6.5
0.45
• Take care of over-voltage caused by
stray inductance
mΩ
mΩ
V
VGE = 15 V
2.8
VGE(th)
ICES
VGE=VCE, IC = 4.8 mA
Tj = 25 °C
V
5
5.8
0.15
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 600 V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
18.5
1.15
0.55
2400
1.00
110
85
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
td(on)
tr
ns
VCC = 300 V
IC = 300 A
Tj = 150 °C
ns
Eon
td(off)
tf
11.5
820
70
mJ
ns
R
R
G on = 5.1 Ω
G off = 5.1 Ω
ns
Eoff
Rth(j-c)
15
mJ
K/W
per IGBT
0.16
GB
© by SEMIKRON
Rev. 11 – 02.12.2008
1
SEMiX302GB066HDs
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 300 A
VF = VEC
Tj = 25 °C
1.4
1.4
1.6
1.6
V
V
V
GE = 0 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
0.9
0.75
1.0
1
1.1
0.95
1.7
V
V
0.85
1.3
1.8
240
35
mΩ
mΩ
A
1.5
2.2
SEMiX®2s
IF = 300 A
di/dtoff = 3600 A/µs
IRRM
Qrr
µC
V
V
GE = -8 V
CC = 300 V
Tj = 150 °C
Err
7.5
mJ
Trench IGBT Modules
Rth(j-c)
per diode
0.19
K/W
Module
LCE
SEMiX302GB066HDs
18
0.7
nH
mΩ
mΩ
K/W
Nm
Nm
g
Preliminary Data
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
1
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Rth(c-s)
Ms
per module
0.045
to heat sink (M5)
to terminals (M6)
3
5
5
Mt
2.5
w
250
• UL recognised file no. E63532
Temperature sensor
Typical Applications
0,493
±5%
R100
Tc=100°C (R25=5 kΩ)
kΩ
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
GB
2
Rev. 11 – 02.12.2008
© by SEMIKRON
SEMiX302GB066HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
© by SEMIKRON
Rev. 11 – 02.12.2008
3
SEMiX302GB066HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
Rev. 11 – 02.12.2008
© by SEMIKRON
SEMiX302GB066HDs
SEMiX 2s
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 11 – 02.12.2008
5
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