SEMIX302GB066HD_06 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX302GB066HD_06 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总4页 (文件大小：882K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 302GB066HD
ꢋ
ꢏ '()ꢕ5 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Absolute Maximum Ratings
Symbol Conditions
ꢍꢐꢈꢅ
Values
Units
IGBT
ꢔꢕꢖꢉ
0--
40- ꢗ'(-ꢘ
4:- ꢗ4--ꢘ
0--
ꢔ
8
$
$
$
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ꢕ
ꢋꢍ ꢏ '( ꢗ7-ꢘ )ꢕ5 ꢋ, ꢏ &9( )ꢕ
8
ꢕ
ꢑꢚ ꢏ & ꢃꢈ
8
ꢕ#!
ꢔ3ꢖꢉ
; '-
ꢔ
ꢋ,5 ꢗꢋꢈꢑꢄ
ꢘ
< =- >>> ? &9( ꢗ&'(ꢘ
)ꢕ
ꢔꢊꢈꢂꢒ
8ꢕ5 & ꢃꢊꢆ>
=---
ꢔ
®
SEMiX 2
Inverse diode
$
$
$
ꢋꢍ ꢏ '( ꢗ7-ꢘ )ꢕ5 ꢋ, ꢏ &(- )ꢕ
4-- ꢗ'--ꢘ
44- ꢗ'=-ꢘ
0--
8
8
8
@
ꢋꢍ ꢏ '( ꢗ7-ꢘ )ꢕ5 ꢋ, ꢏ &9( )ꢕ
ꢑꢚ ꢏ & ꢃꢈ
@
Trench IGBT Modules
@#!
$
ꢑꢚ ꢏ &- ꢃꢈ2 ꢈꢊꢆ>2 ꢋ, ꢏ '( )ꢕ
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8
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SEMiX 302GB066HD
ꢋ
ꢏ '()ꢕ5 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
min.
typ.
max. Units
ꢔ3ꢖꢗꢑꢎꢘ
ꢔ3ꢖ ꢏ ꢔꢕꢖ5 $ꢕ ꢏ 4 ꢃ8
(57
ꢔ
Target Data
$
ꢔ3ꢖ ꢏ -5 ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ5 ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ
-5&
ꢃ8
ꢔ
ꢕꢖꢉ
ꢔꢕꢖꢗꢋAꢘ
ꢌꢕꢖ
ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ
-5: ꢗ-57(ꢘ
&57 ꢗ'57ꢘ
& ꢗ-5:ꢘ
4 ꢗ=ꢘ
ꢔ3ꢖ ꢏ &( ꢔ5 ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ
ꢃB
Features
ꢔꢕꢖꢗꢈꢐꢑꢘ
$ꢕꢆꢂꢃ ꢏ 4-- 85 ꢔ3ꢖ ꢏ &( ꢔ5
&5=( ꢗ&59ꢘ
&5: ꢗ'5&ꢘ
ꢔ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ5 ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
ꢕꢊꢅꢈ
ꢕꢂꢅꢈ
ꢕꢌꢅꢈ
Dꢕꢖ
ꢇꢆ%ꢅꢌ ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢆ%ꢊꢑꢊꢂꢆꢈ
&75(
&5'
ꢆ@
ꢆ@
ꢆ@
ꢆꢁ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢔ3ꢖ ꢏ -5 ꢔꢕꢖ ꢏ '( ꢔ5 ꢏ & !ꢁC
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
-5((
&7
Typical Applications
#
ꢑꢅꢌꢃꢊꢆꢐꢒ<ꢍꢎꢊꢚ5 ꢋꢍꢏ '( ꢗ&(-ꢘ )ꢕ
-59 ꢗ&ꢘ
ꢃB
ꢕꢕE?ꢖꢖE
!ꢐꢑꢌꢊ" ꢕꢂꢆꢛꢅꢌꢑꢅꢌ
#ꢅꢈꢂꢆꢐꢆꢑ $ꢆꢛꢅꢌꢑꢅꢌ
ꢕꢇꢌꢌꢅꢆꢑ ꢉꢂꢇꢌꢍꢅ $ꢆꢛꢅꢌꢑꢅꢌ
ꢀ
ꢀ
ꢀ
ꢑ%ꢗꢂꢆꢘFꢑꢌ
ꢔꢕꢕ ꢏ 4-- ꢔ5 $ꢕꢆꢂꢃ ꢏ 4-- 8
ꢔ3ꢖ ꢏ <7F?&(ꢔ
&&- F 7-
04' F 9-
ꢆꢈ
ꢆꢈ
ꢑ%ꢗꢂ ꢘFꢑ
ꢖꢂꢆ ꢗꢖꢂ
ꢘ
#3ꢂꢆ ꢏ #3ꢂ ꢏ 7 G5 ꢋ, ꢏ &(- )ꢕ
: ꢗ&'ꢘ
ꢃH
Remarks
Inverse Diode
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ% ꢑꢂ
ꢔ@ ꢏ ꢔꢖꢕ
$
@ꢆꢂꢃ ꢏ 4-- 82 ꢔ3ꢖ ꢏ - ꢔ2 ꢋ, ꢏ '( ꢗ&(-ꢘ
&5= ꢗ&5=ꢘ
&50
ꢔ
ꢀ
)ꢕ5 ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
ꢋ ꢏ&'()ꢕ ꢃꢐ"
ꢕ
ꢔꢗꢋAꢘ
ꢌꢋ
ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ
ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ
& ꢗ-57(ꢘ
&54 ꢗ&57ꢘ
ꢗ'9-ꢘ
&5&
&59
ꢔ
ꢃB
8
*ꢌꢂ%ꢇꢍꢑ ꢌꢅꢒꢊꢐ+ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ%
ꢀ
ꢂꢌ ꢋ ꢏ&(-)ꢕ
,
$
$@ꢆꢂꢃ ꢏ 4-- 82 ꢋ, ꢏ '( ꢗ&(-ꢘ )ꢕ
##!
ꢉꢕ %ꢐꢑꢐ. ꢑ / 0 1ꢈ2 ꢔ / &( ꢔ2 ꢋ
ꢏ &(-)ꢕ2 ꢔ ꢏ 40- ꢔ
ꢀ
ꢚ
3ꢖ
,
Iꢌꢌ
ꢖꢌꢌ
%ꢊF%ꢑ ꢏ 8F1ꢈ
ꢗ47ꢘ
1ꢕ
ꢕꢕ
ꢔ3ꢖ ꢏ <7 ꢔ
ꢗ75(ꢘ
ꢃH
ꢀ
Thermal characteristics
#
#
#
ꢚꢅꢌ $3Jꢋ
-5&(
-5'(
KFL
KFL
KFL
ꢑꢎꢗ,<ꢍꢘ
ꢚꢅꢌ $ꢆꢛꢅꢌꢈꢅ Mꢊꢂ%ꢅ
ꢚꢅꢌ @LM
ꢑꢎꢗ,<ꢍꢘM
ꢑꢎꢗ,<ꢍꢘ@M
#
ꢚꢅꢌ ꢃꢂ%ꢇꢒꢅ
-5-=(
KFL
ꢑꢎꢗꢍ<ꢈꢘ
Temperature sensor
#
ꢋꢍ ꢏ '( )ꢕ
( ;(N
4='-
OG
K
'(
J'(F7(
#'ꢏ#&ꢅ"ꢚPJꢗ&Fꢋ'<&Fꢋ&ꢘQ 2 ꢋPKQ2J
Mechanical data
!ꢈF!ꢑ
ꢑꢂ ꢎꢅꢐꢑꢈꢊꢆO ꢗ!(ꢘ F ꢂꢌ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ ꢗ!0ꢘ
4F'5(
( F(
Rꢃ
ꢄ
ꢙ
'(-
GB
1
10-04-2006 GES
© by SEMIKRON
SEMiX 302GB066HD
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
10-04-2006 GES
© by SEMIKRON
SEMiX 302GB066HD
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 Transient thermal impedance of FWD
Fig. 12 Typ. CAL diode peak reverse recovery current
Fig. 9 Transient thermal impedance of IGBT
Fig. 11 CAL diode forward characteristic
3
10-04-2006 GES
© by SEMIKRON
SEMiX 302GB066HD
Fig. 13 Typ. CAL diode recovered charge
3J
ꢚꢊꢆꢂꢇꢑ ꢉꢖ!ꢊS '
ꢕꢐꢈꢅ ꢉꢖ!ꢊS '
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
10-04-2006 GES
© by SEMIKRON
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