SEMIX302GB066HDS_10 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX302GB066HDS_10 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX302GB066HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
600
379
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
286
ICnom
ICRM
VGES
300
ICRM = 2xICnom
600
-20 ... 20
SEMiX® 2s
VCC = 360 V
VGE ≤ 15 V
Tj = 150 °C
VCES ≤ 600 V
tpsc
6
µs
°C
Trench IGBT Modules
SEMiX302GB066HDs
Features
Tj
-40 ... 175
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
419
307
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
300
A
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
600
A
• Homogeneous Si
1400
A
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
-40 ... 175
°C
Module
It(RMS)
Tstg
• UL recognised file no. E63532
600
-40 ... 125
4000
A
°C
V
Typical Applications*
Visol
AC sinus 50Hz, t = 1 min
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
IC = 300 A
VCE(sat)
Tj = 25 °C
1.45
1.7
1.85
2.1
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.9
0.85
1.8
1
V
V
0.9
2.8
4.0
6.5
0.45
mΩ
mΩ
V
VGE = 15 V
2.8
VGE(th)
ICES
VGE=VCE, IC = 4.8 mA
Tj = 25 °C
V
5
5.8
0.15
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 600 V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
18.5
1.15
0.55
2400
1.00
110
85
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
td(on)
tr
ns
VCC = 300 V
IC = 300 A
Tj = 150 °C
ns
Eon
td(off)
tf
11.5
820
70
mJ
ns
R
R
G on = 5.1 Ω
G off = 5.1 Ω
ns
Eoff
Rth(j-c)
15
mJ
K/W
per IGBT
0.16
GB
© by SEMIKRON
Rev. 0 – 16.04.2010
1
SEMiX302GB066HDs
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 300 A
VF = VEC
Tj = 25 °C
1.4
1.4
1.60
1.6
V
V
V
GE = 0 V
Tj = 150 °C
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
0.9
0.75
1.0
1
1.1
0.95
1.7
V
V
0.85
1.3
1.8
240
35
mΩ
mΩ
A
1.5
2.2
SEMiX® 2s
IF = 300 A
di/dtoff = 3600 A/µs
IRRM
Qrr
µC
V
V
GE = -8 V
CC = 300 V
Tj = 150 °C
Err
7.5
mJ
Trench IGBT Modules
SEMiX302GB066HDs
Features
Rth(j-c)
per diode
0.19
K/W
Module
LCE
18
0.7
nH
mΩ
mΩ
K/W
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
1
Rth(c-s)
Ms
per module
0.045
• Homogeneous Si
to heat sink (M5)
to terminals (M6)
3
5
5
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Mt
2.5
w
250
• UL recognised file no. E63532
Temperature sensor
Typical Applications*
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
GB
2
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX302GB066HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 0 – 16.04.2010
3
SEMiX302GB066HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX302GB066HDs
SEMiX 2s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 16.04.2010
5
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