SEMIX302GB066HDS_07 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX302GB066HDS_07 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：1018K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 302GB066HDs
ꢋ
ꢏ '()ꢕ2 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
IGBT
Values
Units
ꢔꢕꢖꢉ
ꢋ- ꢏ '( )ꢕ
4..
67.
'7(
ꢔ
8
8
$
ꢋ- ꢏ &5( )ꢕ
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ꢋꢍ ꢏ 7. )ꢕ
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$
$
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4..
9 '.
4
8
ꢔ
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ꢔ/ꢖꢉ
ꢑꢚꢈꢍ
®
ꢔꢕꢕ ꢏ 64. ꢔ: ꢔ/ꢖ ; &( ꢔ: ꢋ- ꢏ &(. )ꢕ
ꢔꢕꢖꢉ < 4.. ꢔ
=ꢈ
SEMiX 2s
Inverse Diode
Trench IGBT Modules
$
ꢋ- ꢏ &5( )ꢕ
ꢋꢍ ꢏ '( )ꢕ
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6&.
8
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8
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SEMiX 302GB066HDs
ꢑꢚ ꢏ &. ꢃꢈ: ꢈꢊꢆ*
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Module
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Preliminary Data
ꢋꢛ-
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1 ?. *** @ &'(
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ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
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Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
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ꢋ
ꢏ '()ꢕ2 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ%
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
min.
typ.
max. Units
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢔ/ꢖꢗꢑꢎꢘ
ꢔ/ꢖ ꢏ ꢔꢕꢖ2 $ꢕ ꢏ ?27 ꢃ8
(27
ꢔ
Typical Applications
$
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&
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#ꢅꢈꢂꢆꢐꢆꢑ $ꢆꢛꢅꢌꢑꢅꢌ
ꢕꢇꢌꢌꢅꢆꢑ ꢉꢂꢇꢌꢍꢅ $ꢆꢛꢅꢌꢑꢅꢌ
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ꢀ
ꢀ
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.2A
.27(
&27
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ꢋ- ꢏ '()ꢕ
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6
ꢔ
ꢌꢕꢖ
ꢔ/ꢖ ꢏ &( ꢔ
ꢃB
ꢃB
ꢔ
Remarks
ꢋ- ꢏ &(.)ꢕ
'27
?
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌ ꢒꢊꢃꢊꢑꢅ% ꢑꢂ
ꢀ
ꢔꢕꢖꢗꢈꢐꢑꢘ
$ꢕꢆꢂꢃ ꢏ 6.. 82 ꢔ/ꢖ ꢏ &( ꢔ ꢋ- ꢏ '()ꢕꢍꢎꢊꢚꢒꢅꢛ*
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&25
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ꢔ
+ꢌꢂ%ꢇꢍꢑ ꢌꢅꢒꢊꢐ,ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ%
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ꢕꢊꢅꢈ
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ꢕꢂꢅꢈ
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ꢔ/ꢖ ꢏ 17 *** @&(ꢔ
ꢏ & !ꢁC
ꢇꢈꢅ ꢂ ꢈꢂ ꢑ #/ ꢆꢅꢍꢅꢈꢈꢐꢌꢓ
ꢑꢐ0ꢅ ꢍꢐꢌꢅ ꢂ ꢂꢛꢅꢌ1ꢛꢂꢒꢑꢐꢄꢅ ꢍꢐꢇꢈꢅ%
,ꢓ ꢈꢑꢌꢐꢓ ꢊꢆ%ꢇꢍꢑꢐꢆꢍꢅ
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ꢆꢈ
ꢆꢈ
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ꢔꢕꢕ ꢏ 6..ꢔ
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7'.
5.
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#
ꢚꢅꢌ $/Fꢋ
.2&4
GHI
ꢑꢎꢗ-1ꢍꢘ
GB
1
16-04-2007 SCH
© by SEMIKRON
SEMiX 302GB066HDs
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔ> ꢏ ꢔꢖꢕ
$
>ꢆꢂꢃ ꢏ 6.. 8: ꢔ/ꢖ ꢏ . ꢔ
ꢋ- ꢏ '( )ꢕꢍꢎꢊꢚꢒꢅꢛ*
ꢋ- ꢏ &(. )ꢕꢍꢎꢊꢚꢒꢅꢛ*
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&2?
&
&24
&24
ꢔ
ꢔ
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&2&
ꢔ
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ꢋ- ꢏ '( )ꢕ
.27(
&26
&27
.2A(
&25
ꢔ
ꢌ>
ꢃB
ꢃB
ꢋ- ꢏ &(. )ꢕ
ꢋ- ꢏ &(. )ꢕ
'2'
®
$
$
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'?.
6(
8
SEMiX 2s
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Dꢌꢌ
ꢖꢌꢌ
%ꢊH%ꢑ ꢏ 64.. 8H=ꢈ
=ꢕ
ꢔ/ꢖ ꢏ 17 ꢔ: ꢔꢕꢕ ꢏ 6.. ꢔ
52(
ꢃE
Trench IGBT Modules
#
ꢚꢅꢌ %ꢊꢂ%ꢅ
.2&A
GHI
ꢑꢎꢗ-1ꢍꢘJ
Module
Kꢕꢖ
&7
.25
&
ꢆꢁ
ꢃB
ꢃB
SEMiX 302GB066HDs
#
ꢌꢅꢈ*2 ꢑꢅꢌꢃꢊꢆꢐꢒ1ꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ '( )ꢕ
ꢋꢍꢐꢈꢅꢏ &'( )ꢕ
ꢕꢕL@ꢖꢖL
#
ꢚꢅꢌ ꢃꢂ%ꢇꢒꢅ
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GHI
Mꢃ
Mꢃ
ꢄ
ꢑꢎꢗꢍ1ꢈꢘ
Preliminary Data
!
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆ0 ꢗ!(ꢘ
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ ꢗ!4ꢘ
6
(
(
ꢈ
!
'2(
ꢑ
Features
ꢙ
'(.
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
Temperature sensor
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0B
G
&..
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
F&..H&'(
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
Typical Applications
!ꢐꢑꢌꢊ" ꢕꢂꢆꢛꢅꢌꢑꢅꢌ
#ꢅꢈꢂꢆꢐꢆꢑ $ꢆꢛꢅꢌꢑꢅꢌ
ꢕꢇꢌꢌꢅꢆꢑ ꢉꢂꢇꢌꢍꢅ $ꢆꢛꢅꢌꢑꢅꢌ
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This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Remarks
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌ ꢒꢊꢃꢊꢑꢅ% ꢑꢂ
ꢀ
ꢋ ꢏ&'()ꢕ ꢃꢐ"*
ꢕ
+ꢌꢂ%ꢇꢍꢑ ꢌꢅꢒꢊꢐ,ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ%
ꢀ
ꢂꢌ ꢋ ꢏ&(.)ꢕ
-
ꢇꢈꢅ ꢂ ꢈꢂ ꢑ #/ ꢆꢅꢍꢅꢈꢈꢐꢌꢓ
ꢑꢐ0ꢅ ꢍꢐꢌꢅ ꢂ ꢂꢛꢅꢌ1ꢛꢂꢒꢑꢐꢄꢅ ꢍꢐꢇꢈꢅ%
,ꢓ ꢈꢑꢌꢐꢓ ꢊꢆ%ꢇꢍꢑꢐꢆꢍꢅ
ꢀ
ꢀ
GB
2
16-04-2007 SCH
© by SEMIKRON
SEMiX 302GB066HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
16-04-2007 SCH
© by SEMIKRON
SEMiX 302GB066HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance of IGBT
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
16-04-2007 SCH
© by SEMIKRON
SEMiX 302GB066HDs
ꢕꢐꢈꢅ ꢉꢖ!ꢊQ 'ꢈ
+ꢊꢆꢂꢇꢑ
/F
5
16-04-2007 SCH
© by SEMIKRON
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