SEMIX302GAR12E4S_10 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX302GAR12E4S_10 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX302GB12E4s
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
463
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
356
ICnom
300
ICRM
ICRM = 3xICnom
900
VGES
-20 ... 20
SEMiX® 2s
Trench IGBT Modules
SEMiX302GB12E4s
Features
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
356
266
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
300
A
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
1620
A
• Homogeneous Si
-40 ... 175
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Module
It(RMS)
Tstg
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
Remarks
• Case temperature limited to TC=125°C
max.
IC = 300 A
VCE(sat)
Tj = 25 °C
1.8
2.2
2.05
2.4
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
3.3
5.0
5.8
0.1
0.9
0.8
3.8
5.3
6.5
0.3
V
V
mΩ
mΩ
V
VGE = 15 V
R
R
R
R
Gon,main = 0,5 Ω
Goff,main = 0,5 Ω
G,X = 2,2 Ω
VGE(th)
ICES
VGE=VCE, IC = 12 mA
Tj = 25 °C
5
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 1200 V
E,X = 0,5 Ω
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
18.6
1.16
1.02
1700
2.50
282
60
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 300 A
RGint
td(on)
tr
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
ns
ns
Eon
td(off)
tf
30
mJ
ns
RG on = 1.9 Ω
564
117
R
G off = 1.9 Ω
di/dton = 5000 A/µs
ns
di/dtoff = 2800 A/µs
Tj = 150 °C
Eoff
44
mJ
Rth(j-c)
per IGBT
0.096
K/W
GB
© by SEMIKRON
Rev. 0 – 05.05.2010
1
SEMiX302GB12E4s
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 300 A
VF = VEC
Tj = 25 °C
2.1
2.1
2.46
2.4
V
V
V
GE = 0 V
Tj = 150 °C
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.1
0.7
2.2
3.3
1.3
0.9
2.8
3.9
230
50
1.5
1.1
3.2
4.3
V
V
mΩ
mΩ
A
SEMiX® 2s
Trench IGBT Modules
SEMiX302GB12E4s
Features
IF = 300 A
di/dtoff = 4300 A/µs
IRRM
Qrr
µC
V
V
GE = -15 V
CC = 600 V
Tj = 150 °C
Err
19
mJ
Rth(j-c)
per diode
0.17
K/W
Module
LCE
18
0.7
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
1
Rth(c-s)
Ms
per module
0.045
• Homogeneous Si
to heat sink (M5)
3
5
5
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
to terminals (M6)
Mt
2.5
w
250
Temperatur Sensor
Typical Applications*
• AC inverter drives
• UPS
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
R
R
R
R
Gon,main = 0,5 Ω
Goff,main = 0,5 Ω
G,X = 2,2 Ω
E,X = 0,5 Ω
GB
2
Rev. 0 – 05.05.2010
© by SEMIKRON
SEMiX302GB12E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 0 – 05.05.2010
3
SEMiX302GB12E4s
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 05.05.2010
© by SEMIKRON
SEMiX302GB12E4s
SEMiX 2s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 05.05.2010
5
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