SEMIX302GAL12T4S [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX302GAL12T4S |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：1052K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 302GB12T4s
ꢋ
ꢏ ()*ꢕ4 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
Values
Units
ꢔꢕꢖꢉ
ꢋ- ꢏ () *ꢕ
'(..
89.
ꢔ
"
"
6ꢕ
ꢋ- ꢏ '7) *ꢕ
ꢋꢍ ꢏ () *ꢕ
ꢋꢍ ꢏ :. *ꢕ
;))
6ꢕ2<
ꢔ3ꢖꢉ
ꢑꢚꢈꢍ
6ꢕ2<ꢏ;+6ꢕꢆꢂꢃ
=..
> (.
'.
"
ꢔ
®
ꢔꢕꢕ ꢏ 9.. ꢔ? ꢔ3ꢖ @ (. ꢔ? ꢋ- ꢏ '). *ꢕ
ꢔꢕꢖꢉ A '(.. ꢔ
Bꢈ
SEMiX 2s
Inverse Diode
Trench IGBT Modules
6C
ꢋ- ꢏ '7) *ꢕ
ꢋꢍ ꢏ () *ꢕ
ꢋꢍ ꢏ :. *ꢕ
;))
(9)
"
"
6C2<
6C2<ꢏ;+6Cꢆꢂꢃ
=..
"
SEMiX 302GB12T4s
SEMiX 302GAL12T4s
SEMiX 302GAR12T4s
Target Data
Module
6ꢑꢗ2<ꢉꢘ
9..
"
*ꢕ
*ꢕ
ꢔ
ꢋꢛ-
D 8. ,,, E '7)
D 8. ,,, E '()
8...
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
"ꢕ4 ' ꢃꢊꢆ,
Features
ꢋ
ꢏ ()*ꢕ4 ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
min.
typ.
max. Units
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢔ3ꢖꢗꢑꢎꢘ
ꢔ3ꢖ ꢏ ꢔꢕꢖ4 6ꢕ ꢏ '( ꢃ"
)
)4:
94)
ꢔ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
6ꢕꢖꢉ
ꢔ3ꢖ ꢏ . ꢔ4 ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ
ꢋ- ꢏ () *ꢕ
ꢋ- ꢏ () *ꢕ
.4;
.4=
.4:
;47
)4;
(
ꢃ"
ꢔ
ꢀ
ꢔꢕꢖ.
.4:
.47
;4;
)
Typical Applications
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢋ- ꢏ '). *ꢕ
ꢋ- ꢏ ()*ꢕ
ꢔ
ꢀ
ꢀ
ꢀ
ꢌꢕꢖ
ꢔ3ꢖ ꢏ ') ꢔ
ꢃ5
ꢃ5
ꢔ
ꢋ- ꢏ ').*ꢕ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ &ꢅꢒ#ꢊꢆꢄ
ꢔꢕꢖꢗꢈꢐꢑꢘ
6ꢕꢆꢂꢃ ꢏ ;.. "4 ꢔ3ꢖ ꢏ ') ꢔ ꢋ- ꢏ ()*ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ- ꢏ ').*ꢕꢍꢎꢊꢚꢒꢅꢛ,
'4:
(4(
Remarks
(48
ꢔ
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ# ꢑꢂ
ꢕꢊꢅꢈ
':49
'4(
ꢆC
ꢆC
ꢀ
ꢋ ꢏ'()*ꢕ ꢃꢐ+,
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ ()4 ꢔ3ꢖ ꢏ . ꢔ
ꢏ ' <ꢁF
ꢕ
%ꢌꢂ#ꢇꢍꢑ ꢌꢅꢒꢊꢐ!ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ#
ꢕꢌꢅꢈ
G3
'
ꢆC
ꢆꢕ
H
ꢀ
ꢂꢌ ꢋ ꢏ').*ꢕ
-
ꢔ3ꢖ ꢏ D: ,,, E')ꢔ
ꢋ- ꢏ () *ꢕ
'7..
(4)
/ꢓꢆꢐꢃꢊꢍ ꢛꢐꢒꢇꢅꢈ ꢐꢚꢚꢒꢓ ꢑꢂ ꢑꢎꢅ
ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢃ!ꢊꢆꢐꢑꢊꢂꢆ ꢂ ꢌꢅꢈꢊꢈꢑꢂꢌꢈ0
ꢀ
23ꢊꢆꢑ
ꢑ#ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ#ꢗꢂ ꢘ
(9.
9.
ꢆꢈ
ꢆꢈ
ꢃJ
ꢆꢈ
ꢆꢈ
2
2
2
2
ꢏ.4)54
ꢏ.4)54
ꢏ(4(5 ꢅꢐꢍꢎ4
3ꢂꢆ4ꢃꢐꢊꢆ
23ꢂꢆ ꢏ '4= 5
ꢔꢕꢕ ꢏ 9..ꢔ
6ꢕꢆꢂꢃꢏ ;.."
ꢋ- ꢏ '). *ꢕ
3ꢂ 4ꢃꢐꢊꢆ
#ꢊI#ꢑ ꢏ )... "IBꢈ
23ꢂ ꢏ '4= 5
;.
34+
8=.
=.
ꢏ.4)5 ꢅꢐꢍꢎ
ꢖ4+
ꢑ
#ꢊI#ꢑ ꢏ (:.. "IBꢈ
ꢖꢂ
;;
ꢃJ
2ꢑꢎꢗ-Dꢍꢘ
ꢚꢅꢌ 63Kꢋ
.4.=9
LI&
GB
GAL
GAR
1
26-07-2007 SCH
© by SEMIKRON
SEMiX 302GB12T4s
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔC ꢏ ꢔꢖꢕ
6Cꢆꢂꢃ ꢏ ;.. "? ꢔ3ꢖ ꢏ . ꢔ
ꢋ- ꢏ () *ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ- ꢏ '). *ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ- ꢏ () *ꢕ
(4')
(4.)
'4;
(48)
(48
'4)
'4'
;4(
84;
ꢔ
ꢔ
ꢔC.
ꢔ
ꢋ- ꢏ '). *ꢕ
ꢋ- ꢏ () *ꢕ
.4=
ꢔ
ꢌC
(4:
ꢃ5
ꢃ5
ꢋ- ꢏ '). *ꢕ
ꢋ- ꢏ '). *ꢕ
;4:
®
622<
Gꢌꢌ
6Cꢆꢂꢃ ꢏ ;.. "
(;.
).
"
SEMiX 2s
#ꢊI#ꢑ ꢏ 8;.. "IBꢈ
Bꢕ
ꢖꢌꢌ
ꢔ3ꢖ ꢏ D') ꢔ? ꢔꢕꢕ ꢏ 9.. ꢔ
ꢚꢅꢌ #ꢊꢂ#ꢅ
'=
ꢃJ
Trench IGBT Modules
2ꢑꢎꢗ-Dꢍꢘ/
.4'7
LI&
Module
Mꢕꢖ
':
.47
'
ꢆꢁ
ꢃ5
ꢃ5
SEMiX 302GB12T4s
SEMiX 302GAL12T4s
SEMiX 302GAR12T4s
Target Data
2ꢕꢕNEꢖꢖN
ꢌꢅꢈ,4 ꢑꢅꢌꢃꢊꢆꢐꢒDꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ () *ꢕ
ꢋꢍꢐꢈꢅꢏ '() *ꢕ
2ꢑꢎꢗꢍDꢈꢘ
ꢚꢅꢌ ꢃꢂ#ꢇꢒꢅ
.4.8)
LI&
Pꢃ
Pꢃ
ꢄ
<
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆO ꢗ<)ꢘ
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ ꢗ<9ꢘ
;
)
)
ꢈ
<
(4)
ꢑ
ꢙ
().
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
Temperature sensor
ꢀ
ꢀ
ꢀ
2'..
ꢋꢍꢏ'..*ꢕ ꢗ2()ꢏ) O5ꢘ
2ꢗꢋꢘꢏ2'..ꢅ+ꢚRK'..I'()ꢗ'IꢋD'Iꢋ'..ꢘS?
ꢋRLS
.48=;>)Q
;)).>(Q
O5
L
K'..I'()
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
Typical Applications
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ &ꢅꢒ#ꢊꢆꢄ
ꢀ
ꢀ
ꢀ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Remarks
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ# ꢑꢂ
ꢋ ꢏ'()*ꢕ ꢃꢐ+,
ꢀ
ꢕ
%ꢌꢂ#ꢇꢍꢑ ꢌꢅꢒꢊꢐ!ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ#
ꢀ
ꢂꢌ ꢋ ꢏ').*ꢕ
-
/ꢓꢆꢐꢃꢊꢍ ꢛꢐꢒꢇꢅꢈ ꢐꢚꢚꢒꢓ ꢑꢂ ꢑꢎꢅ
ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢃ!ꢊꢆꢐꢑꢊꢂꢆ ꢂ ꢌꢅꢈꢊꢈꢑꢂꢌꢈ0
ꢀ
2
2
2
2
ꢏ.4)54
ꢏ.4)54
ꢏ(4(5 ꢅꢐꢍꢎ4
3ꢂꢆ4ꢃꢐꢊꢆ
3ꢂ 4ꢃꢐꢊꢆ
34+
ꢏ.4)5 ꢅꢐꢍꢎ
ꢖ4+
GB
GAL
GAR
2
26-07-2007 SCH
© by SEMIKRON
SEMiX 302GB12T4s
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
26-07-2007 SCH
© by SEMIKRON
SEMiX 302GB12T4s
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
26-07-2007 SCH
© by SEMIKRON
SEMiX 302GB12T4s
ꢕꢐꢈꢅ ꢉꢖ<ꢊT (ꢈ
%ꢊꢆꢂꢇꢑ
3K
%ꢊꢆꢂꢇꢑ
3"M
%ꢊꢆꢂꢇꢑ
3"2
5
26-07-2007 SCH
© by SEMIKRON
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