SEMIX302GAL12E4S [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX302GAL12E4S |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX302GAL12E4s
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
463
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
356
ICnom
300
ICRM
ICRM = 3xICnom
900
VGES
tpsc
Tj
-20 ... 20
SEMiX®2s
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 150 °C
10
µs
°C
-40 ... 175
Trench IGBT Modules
SEMiX302GAL12E4s
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
356
266
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
300
A
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
1620
A
-40 ... 175
°C
Freewheeling diode
Tc = 25 °C
Tc = 80 °C
IF
356
266
A
A
Tj = 175 °C
IFnom
300
A
Typical Applications
• AC inverter drives
• UPS
IFRM
IFSM
Tj
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
1620
A
-40 ... 175
°C
• Electronic Welding
Module
It(RMS)
Tstg
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
• Dynamic values apply to the
following combination of resistors:
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
R
R
R
R
Gon,main = 0,5 Ω
Goff,main = 0,5 Ω
G,X = 2,2 Ω
IC = 300 A
VCE(sat)
Tj = 25 °C
1.8
2.2
2.05
2.4
V
V
E,X = 0,5 Ω
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
3.3
5.0
5.8
0.1
0.9
0.8
3.8
5.3
6.5
0.3
V
V
mΩ
mΩ
V
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 12 mA
Tj = 25 °C
5
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 1200 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
18.6
1.16
1.02
1700
2.50
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAL
© by SEMIKRON
Rev. 1 – 20.02.2009
1
SEMiX302GAL12E4s
Characteristics
Symbol Conditions
min.
typ.
282
60
max.
Unit
ns
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
td(on)
VCC = 600 V
IC = 300 A
tr
ns
Eon
td(off)
tf
30
mJ
ns
RG on = 1.9 Ω
564
117
44
R
G off = 1.9 Ω
ns
di/dton = 5000 A/µs
di/dtoff = 2800 A/µs
Eoff
Rth(j-c)
mJ
K/W
per IGBT
0.096
SEMiX®2s
Inverse diode
IF = 300 A
GE = 0 V
Tj = 25 °C
VF = VEC
2.1
2.1
2.46
2.4
V
V
V
Tj = 150 °C
chip
Trench IGBT Modules
SEMiX302GAL12E4s
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.1
0.7
2.2
3.3
1.3
0.9
2.8
3.9
230
50
1.5
1.1
3.2
4.3
V
V
mΩ
mΩ
A
IF = 300 A
di/dtoff = 4300 A/µs
IRRM
Qrr
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
µC
V
V
GE = -15 V
CC = 600 V
Tj = 150 °C
Err
19
mJ
Rth(j-c)
per diode
0.17
K/W
Freewheeling diode
IF = 300 A
VF = VEC
Tj = 25 °C
2.1
2.1
2.5
2.4
V
V
V
GE = 0 V
Tj = 150 °C
Typical Applications
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.1
0.7
2.2
3.3
1.3
0.9
2.8
3.9
230
50
1.5
1.1
3.2
4.3
V
V
• AC inverter drives
• UPS
• Electronic Welding
mΩ
mΩ
A
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
IF = 300 A
di/dtoff = 4300 A/µs
IRRM
Qrr
µC
V
V
GE = -15 V
CC = 600 V
Tj = 150 °C
Err
19
mJ
• Dynamic values apply to the
following combination of resistors:
Rth(j-c)
per diode
0.17
K/W
Module
LCE
R
R
R
R
Gon,main = 0,5 Ω
Goff,main = 0,5 Ω
G,X = 2,2 Ω
18
0.7
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
E,X = 0,5 Ω
TC = 125 °C
1
Rth(c-s)
Ms
per module
0.045
to heat sink (M5)
3
5
5
to terminals (M6)
Mt
2.5
w
250
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
GAL
2
Rev. 1 – 20.02.2009
© by SEMIKRON
SEMiX302GAL12E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 1 – 20.02.2009
3
SEMiX302GAL12E4s
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1 – 20.02.2009
© by SEMIKRON
SEMiX302GAL12E4s
SEMiX 2s
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 1 – 20.02.2009
5
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