SEMIX302GAL12E4S_10 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX302GAL12E4S_10 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX302GAL12E4s
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
463
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
356
ICnom
300
ICRM
ICRM = 3xICnom
900
VGES
tpsc
Tj
-20 ... 20
SEMiX® 2s
Trench IGBT Modules
SEMiX302GAL12E4s
Features
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 150 °C
10
µs
°C
-40 ... 175
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
356
266
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
300
A
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
1620
A
• Homogeneous Si
-40 ... 175
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Freewheeling diode
Tc = 25 °C
Tc = 80 °C
IF
356
266
A
A
Tj = 175 °C
IFnom
300
A
Typical Applications*
• AC inverter drives
• UPS
IFRM
IFSM
Tj
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
1620
A
-40 ... 175
°C
• Electronic Welding
Module
It(RMS)
Tstg
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Characteristics
• Dynamic values apply to the
following combination of resistors:
Symbol Conditions
IGBT
min.
typ.
max.
Unit
R
R
R
R
Gon,main = 0,5 Ω
Goff,main = 0,5 Ω
G,X = 2,2 Ω
IC = 300 A
VCE(sat)
Tj = 25 °C
1.8
2.2
2.05
2.4
V
V
V
GE = 15 V
E,X = 0,5 Ω
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
3.3
5.0
5.8
0.1
0.9
0.8
3.8
5.3
6.5
0.3
V
V
mΩ
mΩ
V
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 12 mA
Tj = 25 °C
5
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 1200 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
18.6
1.16
1.02
1700
2.50
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAL
© by SEMIKRON
Rev. 0 – 05.05.2010
1
SEMiX302GAL12E4s
Characteristics
Symbol Conditions
min.
typ.
282
60
max.
Unit
ns
VCC = 600 V
td(on)
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
IC = 300 A
tr
ns
Eon
30
mJ
ns
RG on = 1.9 Ω
td(off)
564
117
R
G off = 1.9 Ω
di/dton = 5000 A/µs
tf
ns
di/dtoff = 2800 A/µs
Tj = 150 °C
Eoff
Rth(j-c)
44
mJ
per IGBT
0.096
K/W
SEMiX® 2s
Trench IGBT Modules
SEMiX302GAL12E4s
Features
Inverse diode
IF = 300 A
GE = 0 V
Tj = 25 °C
VF = VEC
2.1
2.1
2.46
2.4
V
V
V
Tj = 150 °C
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.1
0.7
2.2
3.3
1.3
0.9
2.8
3.9
230
50
1.5
1.1
3.2
4.3
V
V
mΩ
mΩ
A
IF = 300 A
di/dtoff = 4300 A/µs
IRRM
Qrr
µC
• Homogeneous Si
V
V
GE = -15 V
CC = 600 V
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Tj = 150 °C
Err
19
mJ
Rth(j-c)
per diode
0.17
K/W
Freewheeling diode
IF = 300 A
VF = VEC
Tj = 25 °C
2.1
2.1
2.5
2.4
V
V
V
GE = 0 V
Tj = 150 °C
Typical Applications*
chip
• AC inverter drives
• UPS
• Electronic Welding
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.1
0.7
2.2
3.3
1.3
0.9
2.8
3.9
230
50
1.5
1.1
3.2
4.3
V
V
mΩ
mΩ
A
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
IF = 300 A
di/dtoff = 4300 A/µs
IRRM
Qrr
µC
V
V
GE = -15 V
CC = 600 V
Tj = 150 °C
Err
19
mJ
• Dynamic values apply to the
following combination of resistors:
Rth(j-c)
per diode
0.17
K/W
Module
LCE
R
R
R
R
Gon,main = 0,5 Ω
Goff,main = 0,5 Ω
G,X = 2,2 Ω
18
0.7
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
E,X = 0,5 Ω
TC = 125 °C
1
Rth(c-s)
Ms
per module
0.045
to heat sink (M5)
3
5
5
to terminals (M6)
Mt
2.5
w
250
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
GAL
2
Rev. 0 – 05.05.2010
© by SEMIKRON
SEMiX302GAL12E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 0 – 05.05.2010
3
SEMiX302GAL12E4s
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 05.05.2010
© by SEMIKRON
SEMiX302GAL12E4s
SEMiX 2s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 05.05.2010
5
相关型号：
©2020 ICPDF网 联系我们和版权申明