SEMIX302GAL126HD [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX302GAL126HD |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总4页 (文件大小：1262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 302GB126HD ...
ꢋ
ꢏ &'(ꢕ) ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
Values
Units
IGBT
ꢔꢕꢖꢉ
*&++
/++ ꢗ&*+ꢘ
2++
ꢔ
"
,
,
ꢋꢍ ꢏ &' ꢗ.+ꢘ (ꢕ
ꢑꢚ ꢏ * ꢃꢈ
ꢕ
"
ꢕ01
ꢔ3ꢖꢉ
4 &+
ꢔ
ꢋꢛ5) ꢗꢋꢈꢑꢄ
ꢘ
ꢋ6%ꢖ0"ꢋ,67 8 ꢋꢈꢑꢄ
"ꢕ) * ꢃꢊꢆ:
9 2+ ::: ; *'+ ꢗ*&'ꢘ
(ꢕ
ꢔꢊꢈꢂꢒ
2+++
ꢔ
Inverse diode
®
SEMiX 2
,
ꢋꢍ ꢏ &' ꢗ.+ꢘ (ꢕ
&'+ ꢗ*=+ꢘ
2++
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,
ꢑꢚ ꢏ *+ ꢃꢈ> ꢈꢊꢆ:> ꢋ5 ꢏ &' (ꢕ
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Trench IGBT Modules
ꢋ
ꢏ &'(ꢕ) ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
min.
typ.
max. Units
SEMiX 302GB126HD
SEMiX 302GAL126HD
SEMiX 302GAR126HD
Target Data
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').
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,
ꢔ3ꢖ ꢏ +) ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ) ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
*)/
ꢕꢖꢉ
ꢔꢕꢖꢗꢋ6ꢘ
ꢌꢕꢖ
ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
* ꢗ+)@ꢘ
*)& ꢗ*)*ꢘ
2). ꢗ?).ꢘ
ꢔ3ꢖ ꢏ *' ꢔ) ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
/)' ꢗ')'ꢘ
ꢃA
ꢔꢕꢖꢗꢈꢐꢑꢘ
,ꢕꢆꢂꢃ ꢏ &++ ") ꢔ3ꢖ ꢏ *' ꢔ)
*)= ꢗ&ꢘ
&)*' ꢗ&)2'ꢘ
ꢔ
ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ) ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
Features
ꢕꢊꢅꢈ
ꢕꢂꢅꢈ
ꢕꢌꢅꢈ
Cꢕꢖ
ꢇꢆ#ꢅꢌ ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢆ#ꢊꢑꢊꢂꢆꢈ
*2)2
+).
+)=
*.
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ꢆ<
ꢆ<
ꢆꢁ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢔ3ꢖ ꢏ +) ꢔꢕꢖ ꢏ &' ꢔ) ꢏ * 1ꢁB
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
0ꢕꢕD;ꢖꢖD
ꢑꢅꢌꢃꢊꢆꢐꢒ9ꢍꢎꢊꢚ) ꢋꢍꢏ &' ꢗ*&'ꢘ (ꢕ
ꢃA
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
ꢑ#ꢗꢂꢆꢘEꢑꢌ
ꢔꢕꢕ ꢏ ?++ ꢔ) ,ꢕꢆꢂꢃ ꢏ &++ "
ꢔ3ꢖ ꢏ 4 *' ꢔ
/&+ E '+
ꢆꢈ
ꢆꢈ
ꢑ#ꢗꢂ ꢘEꢑ
?++ E *++
Typical Applications
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ#ꢅꢌꢈ
ꢖꢂꢆ ꢗꢖꢂ
ꢘ
03ꢂꢆ ꢏ 03ꢂ ꢏ &). A) ꢋ5 ꢏ *&' (ꢕ
/+ ꢗ&?ꢘ
ꢃF
ꢀ
ꢀ
ꢀ
Inverse diode
ꢔ< ꢏ ꢔꢖꢕ
,<ꢆꢂꢃ ꢏ &++ "> ꢔ3ꢖ ꢏ + ꢔ> ꢋ5 ꢏ &' ꢗ*&'ꢘ
*)? ꢗ*)?ꢘ
*). ꢗ*).ꢘ
ꢔ
(ꢕ) ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
ꢔꢗꢋ6ꢘ
ꢌꢋ
ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
* ꢗ+).ꢘ
/ ꢗ2ꢘ
*)* ꢗ+)@ꢘ
/)' ꢗ2)'ꢘ
ꢔ
ꢃA
"
,
,<ꢆꢂꢃ ꢏ &++ "> ꢋ5 ꢏ &' ꢗ*&'ꢘ (ꢕ
ꢗ&@+ꢘ
ꢗ''ꢘ
001
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ꢖꢌꢌ
#ꢊE#ꢑ ꢏ '@++ "EHꢈ
ꢔ3ꢖ ꢏ 9*' ꢔ
Hꢕ
ꢗ&&ꢘ
ꢃF
Thermal characteristics
0ꢑꢎꢗ59ꢍꢘ
ꢚꢅꢌ ,3Iꢋ
+)*&'
+)&'
JEK
JEK
JEK
0ꢑꢎꢗ59ꢍꢘL
0ꢑꢎꢗ59ꢍꢘ<L
ꢚꢅꢌ ,ꢆꢛꢅꢌꢈꢅ Lꢊꢂ#ꢅ
ꢚꢅꢌ <KL
0ꢑꢎꢗꢍ9ꢈꢘ
ꢚꢅꢌ ꢃꢂ#ꢇꢒꢅ
+)+2'
JEK
Temperature sensor
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ꢋꢍ ꢏ &' (ꢕ
' 4'M
/2&+
NO
J
I&'E.'
0&ꢏ0*ꢅPꢚQIꢗ*Eꢋ&9*Eꢋ*ꢘR > ꢋQJR>I
Mechanical data
1ꢈE1ꢑ
ꢑꢂ ꢎꢅꢐꢑꢈꢊꢆN ꢗ1'ꢘ E ꢂꢌ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ ꢗ1?ꢘ
/E&)'
' E'
7ꢃ
ꢄ
ꢙ
&'+
GB
GAL
GAR
1
25-07-2005 GES
© by SEMIKRON
SEMiX 302GB126HD ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
25-07-2005 GES
© by SEMIKRON
SEMiX 302GB126HD ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 Transient thermal impedance of FWD
Fig. 12 Typ. CAL diode peak reverse recovery current
Fig. 9 Transient thermal impedance of IGBT
Fig. 11 CAL diode forward charact., incl. RCC´+EE´
3
25-07-2005 GES
© by SEMIKRON
SEMiX 302GB126HD ...
Fig. 13 Typ. CAL diode recovered charge
3I
ꢕꢐꢈꢅ ꢉꢖ1ꢊS &
ꢕꢐꢈꢅ ꢉꢖ1ꢊS &
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
25-07-2005 GES
© by SEMIKRON
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