S2000 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | S2000 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
S2000
DESCRIPTION
·With TO-3PH package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Color TV horizontal output applications
·Color TV switching regulator applications
PINNING(See Fig.2).
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PH) and symbol
3
Emitter
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
700
5
UNIT
V
Open emitter
Open base
V
Open collector
V
8
A
ICM
Collector current-peak
Base current
15
A
IB
4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
125
150
-55~150
W
ꢀ
Tj
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
S2000
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
CONDITIONS
MIN
700
5
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH
Emitter-base breakdown voltage
IE=1mA ;IC=0
V
Collector-emitter saturation voltage IC=4.5A ;IB=1.0A
5.0
1.2
1
V
VCE
(sat)
Base-emitter saturation voltage
Collector cut-off current
DC current gain
IC=4.5A ;IB=1.0A
V
VBE
(sat)
ICBO
VCB=1500V; VBE=0
IC=1A ; VCE=5V
mA
hFE-1
hFE-2
COB
fT
10
30
9
DC current gain
IC=4.5A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
IC=0.1A ; VCE=10V
4.5
Collector output capacitance
Transition frequency
95
2
pF
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
S2000
PACKAGE OUTLINE
Fig.2 outline dimensions
3
相关型号：
S2000AF
PLANAR SILICON TRANSISTOR NPN TRIPLE DIFFUSED(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
Wing Shing
©2020 ICPDF网 联系我们和版权申明