S2000A [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | S2000A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
S2000A
DESCRIPTION
·With TO-3P(H)IS package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Color TV horizontal output applications
·Color TV switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
700
5
UNIT
V
Open emitter
Open base
V
Open collector
V
8
A
ICM
Collector current-peak
Base current
15
A
IB
4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
125
150
-55~150
W
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
S2000A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCE(sat)
VBE(sat)
ICBO
PARAMETER
CONDITIONS
MIN
700
5
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH
Emitter-base breakdown voltage
IE=1mA ;IC=0
V
Collector-emitter saturation voltage IC=4.5A ;IB=2A
1.0
1.2
1
V
Base-emitter saturation voltage
Collector cut-off current
DC current gain
IC=4.5A ;IB=1.0A
V
VCB=1500V; VBE=0
IC=1A ; VCE=5V
mA
hFE-1
10
30
9
hFE-2
DC current gain
IC=4.5A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
IC=0.1A ; VCE=10V
4.5
COB
Collector output capacitance
Transition frequency
95
2
pF
fT
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
S2000A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
相关型号：
S2000AF
PLANAR SILICON TRANSISTOR NPN TRIPLE DIFFUSED(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
Wing Shing
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