S2000AF [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | S2000AF |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
S2000AF
DESCRIPTION
·
·With TO-3P(H)IS package
·High voltage
·Fast switching
APPLICATIONS
·Horizontal deflection for color TV
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
700
UNIT
V
Open emitter
Open base
V
Open collector
10
V
8
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
15
A
PC
TC=25℃
50
W
℃
℃
150
Tj
Tstg
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-C
Thermal resistance from junction to case
2.5
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
S2000AF
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICES
PARAMETER
CONDITIONS
MIN
700
10
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=100mA ;IB=0
Emitter-base breakdown voltage
IE=10mA ;IC=0
V
Collector-emitter saturation voltage IC=4.5A ;IB=2.0A
1.0
1.3
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4.5A ;IB=2.0A
V
VCE=1500V; VBE=0
TC=125℃
1
2
mA
mA
IEBO
VEB=5V; IC=0
1
hFE
IC=1A ; VCE=5V
8
fT
Transition frequency
IC=0.1A ; VCE=5V;f=5MHz
7
MHz
Switching times inductive load
ts
tf
Storage time
Fall time
7
μs
μs
IC=4.5A ; hFE=2.5; VCC=140V
LC=0.9mH; LB=3μH
0.55
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
S2000AF
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
相关型号：
S2000N
NPN TRIPLE DIFFUSED MESA TYPE (COLOR TV HORIZONTAL OUTPUT, SWITCHING REGULATOR APPLICATIONS)
TOSHIBA
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