S2000AFI [STMICROELECTRONICS]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
| 型号： | S2000AFI |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 文件： | 总6页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S2000AFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
STMicroelectronics PREFERRED
SALESTYPE
■
■
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N).
APPLICATIONS:
■
HORIZONTAL DEFLECTION FOR COLOUR
TV
3
2
1
DESCRIPTION
The S2000AFI
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
is
manufactured
using
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
1500
V
V
700
10
V
8
15
A
ICM
Collector Peak Current (tp < 5 ms)
A
o
Ptot
Total Dissipation at Tc = 25 C
50
W
oC
oC
Tstg
Storage Temperature
-65 to 150
150
Tj
Max. Operating Junction Temperature
1/6
December 1999
S2000AFI
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
o
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V
TC = 125 C
1
2
mA
mA
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
100
µA
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
700
10
V
VEBO
VCE(sat)
VBE(sat)
Emitter Base Voltage
(IC = 0)
IE = 10 mA
IC = 4.5 A
IC = 4.5 A
V
V
V
Collector-Emitter
Saturation Voltage
IB = 2 A
IB = 2 A
1
Base-Emitter
1.3
Saturation Voltage
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 4.5 A hFE = 2.5 VCC = 140 V
LC = 0.9 mH LB = 3 µH
ts
tf
7
0.55
µs
µs
fT
Transition Frequency
IC = 0.1 A
VCE = 5 V f = 5 MHz
7
MHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area.
Thermal Impedance
2/6
S2000AFI
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
Switching Time Inductive Load (see figure 1)
3/6
S2000AFI
Figure 1: Inductive Load Switching TestCircuit.
4/6
S2000AFI
ISOWATT218 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
TYP.
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
A
C
D
D1
E
F
F2
F3
G
H
L
9
0.354
L1
L2
L3
L4
L5
L6
N
20.80
19.10
22.80
40.50
4.85
21.20
19.90
23.60
42.50
5.25
0.819
0.752
0.898
1.594
0.191
0.797
0.083
0.835
0.783
0.929
1.673
0.207
0.817
0.091
20.25
2.1
20.75
2.3
R
4.6
0.181
DIA
3.5
3.7
0.138
0.146
- Weight: 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
P025C/A
5/6
S2000AFI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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.
6/6
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TOSHIBA
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