S2000AFI [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
S2000AFI
型号: S2000AFI
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:40K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
S2000AFI  
DESCRIPTION  
·
·With TO-3P(H)IS package  
·High voltage  
·Fast switching  
APPLICATIONS  
·Horizontal deflection for color TV  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-3P(H)IS) and symbol  
3
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
1500  
700  
UNIT  
V
Open emitter  
Open base  
V
Open collector  
10  
V
8
A
ICM  
Collector current-peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
15  
A
PC  
TC=25  
50  
W
150  
Tj  
Tstg  
-55~150  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-C  
Thermal resistance from junction to case  
2.5  
/W  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
S2000AFI  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
VCEO(SUS)  
V(BR)EBO  
VCEsat  
VBEsat  
ICES  
PARAMETER  
CONDITIONS  
MIN  
700  
10  
TYP.  
MAX  
UNIT  
V
Collector-emitter sustaining voltage IC=100mA ;IB=0  
Emitter-base breakdown voltage  
IE=10mA ;IC=0  
V
Collector-emitter saturation voltage IC=4.5A ;IB=2.0A  
1.0  
1.3  
V
Base-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=4.5A ;IB=2.0A  
CE=1500V; VBE=0  
V
V
1
2
mA  
mA  
TC=125℃  
IEBO  
VEB=5V; IC=0  
1
hFE  
IC=1A ; VCE=5V  
8
fT  
Transition frequency  
IC=0.1A ; VCE=5V;f=5MHz  
7
MHz  
Switching times inductive load  
ts  
tf  
Storage time  
Fall time  
7
μs  
μs  
IC=4.5A ; hFE=2.5; VCC=140V  
LC=0.9mH; LB=3μH  
0.55  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
S2000AFI  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)  
3

相关型号:

S2000AF_07

High voltage NPN Power transistor for standard Definition CRT display
STMICROELECTR

S2000AF_0708

High voltage NPN power transistor for standard definition CRT display
STMICROELECTR

S2000AP

Microcontroller, 8-Bit, S2000 CPU, MOS, PDIP40,
AMI

S2000C

PROTIMETER
AMPHENOL

S2000D

PROTIMETER
AMPHENOL

S2000F

TO-39(H) PACKAGE SERIES
ETC

S2000N

NPN TRIPLE DIFFUSED MESA TYPE (COLOR TV HORIZONTAL OUTPUT, SWITCHING REGULATOR APPLICATIONS)
TOSHIBA

S2000N

Silicon NPN Power Transistors
ISC

S2000N

Silicon NPN Power Transistors
SAVANTIC

S2000P

Microcontroller, 8-Bit, S2000 CPU, MOS, PDIP40,
AMI

S2001L

SCRs 1-70 AMPS NON-SENSITIVE GATE
TECCOR

S2001L/LR

Trigger Device
TECCOR