S2000AF [STMICROELECTRONICS]
High voltage NPN Power transistor for standard Definition CRT display; 对于标准清晰度CRT显示器高压NPN功率晶体管
| 型号： | S2000AF |
| 厂家： | 
ST |
| 描述： | High voltage NPN Power transistor for standard Definition CRT display |
| 文件： | 总8页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S2000AF
High voltage NPN Power transistor for standard
Definition CRT display
Preliminary Data
Features
■ State-of-the-art technology:
– Diffused collector “Enhanced generation”
■ Stable performances versus operating
temperature variation
■ Low base-drive requirement
3
2
■ Tigh h range at operating collector current
FE
1
■ High ruggedness
ISOWATT218FX
■ Fully insulated power package U.L. compliant
■ In compliance with the 2002/93/EC European
directive
Applications
Internal schematic diagram
■ Horizontal deflection output for CRT TV
■ Switch mode power supplies for CRT TV
Description
The S2000AF is manufactured using Diffused
Collector in Planar Technology adopting new and
enhanced high voltage structure for updated
performance to the Horizontal Deflection stage.
Order codes
Part Number
Marking
Package
ISOWATT218FX
Packaging
S2000AF
S2000AF
Tube
March 2007
Rev 1
1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
8
Electrical ratings
S2000AF
1
Electrical ratings
Table 1.
Symbol
Absolute maximum rating
Parameter
Value
1500
700
9
Unit
V
VCES
VCEO
VEBO
IC
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Collector-base voltage (IC = 0)
Collector current
V
V
8
A
ICM
Collector peak current (tP < 5ms)
Base current
15
A
IB
4
A
PTOT
Total dissipation at Tc = 25°C
50
W
Insulation withstand voltage (RMS) from all three leads to
external heatsink
Vins
2500
V
Tstg
TJ
Storage temperature
-65 to 150
150
°C
Max. operating junction temperature
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case _______________max
2.5
°C/W
2/8
S2000AF
Electrical characteristics
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 3.
Symbol
Electrical characteristics
Parameter
Test conditions
Min. Typ. Max. Unit
VCE = 1500V
Collector cut-off current
(VBE =0)
0.2
2
mA
mA
ICES
VCE = 1500V; TC= 125°C
Emitter cut-off current
(IC =0)
IEBO
VEB = 9V
1
mA
V
Collector-emitter
sustaining voltage
(1)
IC = 100mA
700
VCEO(sus)
(IC =0)
IC = 4.5A
IC = 4.5A
IB = 2A
IB = 1A
1
5
Collector-emitter
saturation voltage
(1)
V
V
VCE(sat)
Base-emitter saturation
voltage
(1)
IC = 4.5A
IB = 1A
1.2
VBE(sat)
IC = 1A
VCE = 5V
10
30
9
(1)
DC current gain
hFE
IC = 4.5A
VCE = 5V 4.5
IC = 4.5A
IB(on) = 0.5A
Inductive load
Storage time
Fall time
ts
tf
VBE(off) = -2.7V fh = 16KHz
2.5
0.2
µs
µs
LBB(off) = 4.5µH
1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
3/8
Electrical characteristics
S2000AF
2.1
Test circuits
Figure 1.
Power losses and inductive load switching
Figure 2.
Reverse biased safe operating area
4/8
S2000AF
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
5/8
Package mechanical data
S2000AF
ISOWATT218FX MECHANICAL DATA
mm.
DIM.
MIN.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
TYP
MAX.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
A
C
D
D1
E
F
F2
G
G1
H
5.45
15.30
9
15.70
10.20
23.20
26.70
44.40
4.70
L
L2
L3
L4
L5
L6
L7
N
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40
24.70
15
2.20
R
4.20
Dia
3.80
7627132 B
6/8
S2000AF
Revision history
4
Revision history
Table 4.
Date
02-Mar-2007
Revision history
Revision
Changes
1
Initial release.
7/8
S2000AF
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8/8
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