2SC4304 [SANKEN]

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose); 硅NPN三重扩散平面型晶体管(开关稳压器和通用)
2SC4304
型号: 2SC4304
厂家: SANKEN ELECTRIC    SANKEN ELECTRIC
描述:

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
硅NPN三重扩散平面型晶体管(开关稳压器和通用)

晶体 稳压器 开关 晶体管 功率双极晶体管 局域网
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2 S C4 3 0 4  
Silicon NPN Triple Diffused Planar Transistor (High Voltage High Speed Switchihg Transistor)  
Application : Switching Regulator and General Purpose  
External Dimensions FM20(TO220F)  
Absolute maximum ratings  
Electrical Characteristics  
(Ta=25°C)  
(Ta=25°C)  
2SC4304  
900  
2SC4304  
100max  
100max  
800min  
10 to 30  
0.5max  
1.2max  
15typ  
Symbol  
ICBO  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Conditions  
Unit  
µA  
µA  
V
Unit  
±0.2  
4.2  
±0.2  
10.1  
c
0.5  
2.8  
VCB=800V  
V
800  
IEBO  
VEB=7V  
V
7
V(BR)CEO  
hFE  
IC=10mA  
V
±0.2  
ø3.3  
a
b
3(Pulse6)  
1.5  
VCE=4V, IC=0.7A  
IC=0.7A, IB=0.14A  
IC=0.7A, IB=0.14A  
VCE=12V, IE=0.3A  
VCB=10V, f=1MHz  
A
VCE(sat)  
VBE(sat)  
fT  
IB  
V
V
A
PC  
35(Tc=25°C)  
150  
W
°C  
°C  
±0.15  
1.35  
Tj  
MHz  
pF  
±0.15  
1.35  
COB  
50typ  
Tstg  
–55 to +150  
+0.2  
-0.1  
0.85  
+0.2  
-0.1  
0.45  
±0.2  
2.4  
2.54  
2.54  
Typical Switching Characteristics (Common Emitter)  
±0.2  
2.2  
VCC  
(V)  
RL  
IC  
VBB1  
VBB2  
(V)  
IB1  
IB2  
tstg  
tf  
ton  
Weight : Approx 2.0g  
a. Type No.  
b. Lot No.  
()  
(A)  
(V)  
(A)  
(A)  
(µs)  
(µs)  
(µs)  
B
C E  
250  
357  
0.7  
10  
–5  
0.1  
–0.35  
4.0max  
0.7max  
0.7max  
IC VCE Characteristics (Typical)  
VCE(sat),VBE(sat) IC Temperature Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(IC/IB=5)  
(VCE=4V)  
3
3
700mA  
VCE(sat)  
2
–55˚C (Case Temp)  
25˚C (Case Temp)  
125˚C (Case Temp)  
2
1
2
1
0
100mA  
VBE(sat)  
1
0
0.01  
0
0
1
2
3
4
0.05  
0.1  
0.5  
1
3
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Collector-Emitter Voltage VCE(V)  
Base-Emittor Voltage VBE(V)  
Collector Current IC(A)  
hFE IC Characteristics (Typical)  
tontstgtf IC Characteristics (Typical)  
θ
j-a t Characteristics  
(VCE=4V)  
4
1
7
5
50  
125˚C  
25˚C  
tstg  
VCC 250V  
IC:IB1:–IB2=10:1.5:5  
–55˚C  
1
10  
5
tf  
0.5  
ton  
0.5  
0.3  
0.1  
0.1  
2
1
10  
100  
1000  
0.5  
Collector Current IC(A)  
1
2
0.01  
0.05  
0.1  
0.5  
1
3
Time t(ms)  
Collector Current IC(A)  
Safe Operating Area (Single Pulse)  
Reverse Bias Safe Operating Area  
Pc Ta Derating  
10  
5
10  
5
35  
30  
1
1
0.5  
0.5  
20  
10  
0.1  
0.1  
Without Heatsink  
Natural Cooling  
L=3mH  
0.05  
0.05  
Without Heatsink  
Natural Cooling  
IB2=–1.0A  
Duty:less than 1%  
0.01  
0.01  
Without Heatsink  
2
0
0.005  
2
0.005  
5
10  
50 100  
500 1000  
50  
100  
500  
1000  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
100  

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