2SC4308 [RENESAS]

Silicon NPN Epitaxial Planar; NPN硅外延平面
2SC4308
型号: 2SC4308
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon NPN Epitaxial Planar
NPN硅外延平面

文件: 总6页 (文件大小:161K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC4308  
Silicon NPN Epitaxial Planar  
REJ03G0723-0200  
(Previous ADE-208-1103)  
Rev.2.00  
Aug.10.2005  
Application  
VHF Wide band amplifier  
Outline  
RENESAS Package code: PRSS0003DA-C  
(Package name: TO-92 (2))  
1. Base  
Emitter  
ector  
Absolute Maximum Rating
(Ta = 25°C)  
Item  
Collector to base voltage  
ymbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
30  
Collector to emitter vol
Emitter to base volta
Collector current  
20  
3
V
V
300  
mA  
mA  
mW  
°C  
°C  
Collector peak current  
Collector power dissipation  
Junction temperature  
Storage temperature  
iC (peak)  
PC  
500  
600  
Tj  
150  
Tstg  
–55 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 5  
2SC4308  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)CBO  
V(BR)CEO  
ICBO  
Min  
30  
20  
Typ  
Max  
Unit  
V
Test conditions  
IC = 100 µA, IE = 0  
Collector to base breakdown voltage  
Collector to emitter breakdown voltage  
Collector cutoff current  
V
IC = 1 mA, RBE = ∞  
VCB = 25 V, IE = 0  
VEB = 3 V, IE = 0  
1
µA  
µA  
Emitter cutoff current  
IEBO  
10  
200  
DC current transfer ratio  
hFE  
50  
1.5  
VCE = 5 V, IC = 50 mA  
GHz VCE = 5 V, IC = 50 mA  
pF VCB = 10 V, IE = 0, f = 1 MHz  
Gain bandwidth product  
fT  
2.5  
4.0  
Collector output capacitance  
Cob  
Rev.2.00 Aug 10, 2005 page 2 of 5  
2SC4308  
Main Characteristics  
Typical Output Characteristics  
Maximum Collector Dissipation Curve  
200  
600  
400  
200  
2.0  
1.5  
100  
0.1  
0.5mA  
IB = 0  
2.0  
0
50  
100  
150  
0
1.0  
Ambient Temperature Ta (°C)  
CollEmitter Voltage VCE (V)  
DC Current Transfer Ratio vs.  
Collector Current  
Voltage vs.  
rent  
1,000  
100  
10  
0.1  
VCE = 5 V  
Pulse Test  
VCE = 5 V  
Pulse Test  
Ta = 75°C  
Ta = –25°C  
75  
25  
25  
1
1
10  
100  
1,000  
Co
Collector Current IC (mA)  
Gain Bandwidth Product vs.  
Collector Current  
Collon  
Voltagrent  
1.0  
10,000  
1,000  
100  
VCE = 5 V  
Ta = 75°C  
25  
0.1  
–25  
IC = 10 IB  
Pulse Test  
0.01  
1
10  
100  
1,000  
1
10  
100  
1,000  
Collector Current IC (mA)  
Collector Current IC (mA)  
Rev.2.00 Aug 10, 2005 page 3 of 5  
2SC4308  
Collector Output Capacitance  
vs. Collector Current  
Emitter Input Capacitnce vs.  
Emitter to Base Votlage  
100  
100  
10  
1
f = 1 MHz  
IE = 0  
f = 1 MHz  
IC = 0  
10  
1
10  
100  
0.1  
1.0  
10  
Emitteto Base Voltage VEB (V)  
Collector to Base Voltage VCB (V)  
Rev.2.00 Aug 10, 2005 page 4 of 5  
2SC4308  
Package Dimensions  
JEITA Package Code  
SC-43A  
RENESAS Code  
PRSS0003DA-C  
Package Name  
MASS[Typ.]  
0.25g  
Unit: mm  
TO-92(2) / TO-92(2)V  
4.8 0.3  
3.8 0.3  
0.60 Max  
0.5 Max  
0.5 Max  
1.27  
2.54  
Ordering Information  
Part Name  
Shipping Container  
ox, Radial Taping  
2SC4308TZ-E  
2500  
Note: For some grades, prode contact the Renesas sales office to check the state of  
production before or
Rev.2.00 Aug 10, 2005 page 5 of 5  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technouct best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belochnology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-parthe use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and on on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without nr other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Rutor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other l
Please also pay attention to information published by Renesas Technology Corp. by vagy Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including progorithms, please be sure to  
evaluate all information as a total system before making a final decision on the aenesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the inform
5. Renesas Technology Corp. semiconductors are not designed or manufacturnder circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an auistributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus ol, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessarese materials.  
7. If these products or technologies are subject to the Japanese expunder a license from the Japanese government and  
cannot be imported into a country other than the approved dest
Any diversion or reexport contrary to the export control laws adestination is prohibited.  
8. Please contact Renesas Technology Corp. for further detaied therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/ormation.  
Renesas Technology America
450 Holger Way, San Jose, C
Tel: <1> (408) 382-7500, F
Renesas Technology
Dukes Meadow, Millboare, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100
Renesas Technology Hong K
7th Floor, North Tower, World Finur City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852>
Renesas Technology Taiwan Co., Ltd
10th Floor, No.99, Fushing North Road, Tei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  

相关型号:

2SC4308RF

RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN
HITACHI

2SC4308RF

VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, TO-92, 3 PIN
RENESAS

2SC4308RR

暂无描述
RENESAS

2SC4308TZ

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
RENESAS

2SC4308TZ-E

Silicon NPN Epitaxial Planar
RENESAS

2SC431

POWER TRANSISTOR
SHINDENGEN

2SC4310

2SC4310
SHINDENGEN

2SC4312

2SC4312
SHINDENGEN

2SC4313

2SC4313
SHINDENGEN

2SC4313

Silicon NPN Power Transistor
ISC

2SC4315

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
TOSHIBA

2SC4315TE85L

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
TOSHIBA