2SC4304_15 [JMNIC]
Silicon NPN Power Transistors;型号: | 2SC4304_15 |
厂家: | QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:188K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4304
DESCRIPTION
·With TO-220F package
·High voltage
·High speed switching
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
900
Open base
800
V
Open collector
7
3
V
A
ICM
Collector current-peak
Base current
6
A
IB
1.5
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25℃
35
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4304
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=10mA ; IB=0
800
IC=0.7A ;IB=0.14A
IC=0.7A ;IB=0.14A
VCB=800V; IE=0
0.5
1.2
100
100
30
V
V
μA
μA
IEBO
VEB=7V; IC=0
hFE
DC current gain
IC=0.7A ; VCE=4V
IE=0; VCB=10V;f=1MHz
IE=-0.3A ; VCE=12V
10
COB
Output capacitance
50
15
pF
fT
Transition frequency
MHz
Switching times
ton
Turn-on time
0.7
4.0
0.7
μs
μs
μs
IC=0.7A; IB1=0.1A
IB2=-0.35A
VCC=250V ,RL=357Ω
ts
Storage time
Fall time
tf
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4304
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4304
4
相关型号:
2SC4308RF
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN
HITACHI
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