2SC4308 [HITACHI]
Silicon NPN Epitaxial Planar; NPN硅外延平面
| 型号： | 2SC4308 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Epitaxial Planar |
| 文件： | 总6页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4308
Silicon NPN Epitaxial Planar
Application
VHF Wide band amplifier
Outline
TO-92 (2)
1. Base
2. Emitter
3. Collector
3
2
1
2SC4308
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
20
V
3
V
300
mA
mA
mW
°C
°C
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
iC (peak)
PC
500
600
Tj
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
30
—
—
V
IC = 100 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
20
—
—
V
IC = 1 mA, RBE = ∞
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
hFE
fT
—
—
1
µA
µA
VCB = 25 V, IE = 0
—
—
10
200
—
—
VEB = 3 V, IE = 0
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
50
1.5
—
—
VCE = 5 V, IC = 50 mA
VCE = 5 V, IC = 50 mA
VCB = 10 V, IE = 0, f = 1 MHz
2.5
4.0
GHz
pF
Cob
2
2SC4308
Typical Output Characteristics
Maximum Collector Dissipation Curve
200
100
600
400
200
2.0
1.5
0.1
0.5mA
IB = 0
0
1.0
2.0
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Base to Emitter Voltage vs.
Collector Current
1,000
10
V
CE = 5 V
VCE = 5 V
Pulse Test
Pulse Test
Ta = 75°C
Ta = –25°C
100
1.0
0.1
75
25
25
–25
10
1
10
100
1,000
1
10
100
1,000
Collector Current IC (mA)
Collector Current IC (mA)
3
2SC4308
Collector to Emitter Saturation
Voltage vs. Collector Current
Gain Bandwidth Product vs.
Collector Current
1.0
10,000
1,000
100
VCE = 5 V
Ta = 75°C
25
0.1
–25
IC = 10 IB
Pulse Test
0.01
1
10
100
1,000
1
10
100
1,000
Collector Current IC (mA)
Collector Current IC (mA)
Collector Output Capacitance
vs. Collector Current
Emitter Input Capacitnce vs.
Emitter to Base Votlage
100
100
10
1
f = 1 MHz
E = 0
f = 1 MHz
C = 0
I
I
10
1
10
Collector to Base Voltage VCB (V)
100
0.1
1.0
Emitter to Base Voltage VEB (V)
10
4
Unit: mm
4.8 ± 0.3
3.8 ± 0.3
0.60 Max
0.45 ± 0.1
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (2)
Conforms
Conforms
Weight (reference value) 0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
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Tel: 535-2100
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Germany
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Taipei Branch Office
3F, Hung Kuo Building. No.167,
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Tel: <886> (2) 2718-3666
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Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
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Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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