2SC4308 [ISC]
isc Silicon NPN RF Transistor; ISC的硅NPN晶体管RF
| 型号： | 2SC4308 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN RF Transistor |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC4308
DESCRIPTION
·Low Noise
·High Gain Bandwidth Product
APPLICATIONS
·Designed for use in VHF wide band amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
30
UNIT
V
20
V
3
V
Collector Current-Continuous
Collector Current-Peak
300
500
0.6
mA
mA
W
ICM
Collector Power Dissipation
@TC=25℃
PC
TJ
Junction Temperature
150
-55~150
℃
Storage Temperature Range
℃
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC4308
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
ICBO
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
CONDITIONS
MIN
30
TYP.
MAX
UNIT
V
IC= 100μA ; IE= 0
IC= 1mA ; RBE= ∞
VCB= 25V; IE= 0
20
V
1
μA
μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
10
hFE
DC Current Gain
IC= 50mA ; VCE= 5V
IC= 50mA ; VCE= 5V
IE= 0 ; VCB= 10V;f= 1.0MHz
50
200
fT
Current-Gain—Bandwidth Product
Output Capacitance
1.5
2.5
4.0
GHz
pF
COB
2
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
iscRF Product Specification
isc Silicon NPN RF Transistor
2SC4308
isc Website：www.iscsemi.cn
相关型号：
2SC4308RF
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN
HITACHI
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