2SC4306 [KEXIN]
High-Current Switching Applications; 大电流开关应用![2SC4306](http://pdffile.icpdf.com/pdf1/p00149/img/icpdf/2SC4306_826366_icpdf.jpg)
型号: | 2SC4306 |
厂家: | ![]() |
描述: | High-Current Switching Applications |
文件: | 总2页 (文件大小:46K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SMD Type
Transistors
High-Current Switching Applications
2SC4306
TO-252
Unit: mm
6.50+0.15
-0.15
2.30+0.1
-0.1
5.30+0.2
0.50+0.8
-0.7
-0.2
Features
Low saturation voltage.
Fast switching speed.
Large current capacity.
0.127
max
0.80+0.1
-0.1
0.60+0.1
2.3
4.60+0.15
-0.1
1 Base
-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
30
20
V
5
V
8
A
Collector current (pulse)
Base current
ICP
12
A
IB
1.5
A
Collector dissipation
Tc=25
PC
1
15
W
W
PC
Jumction temperature
Storage temperature
Tj
150
Tstg
-55 to +150
1
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SMD Type
Transistors
2SC4306
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
IEBO
Testconditons
Min
Typ
Max
1
Unit
ìA
VCB = 20V, IE=0
VEB = 4V, IC=0
1
ìA
VCE = 2V , IC = 500mA
VCE = 2V , IC = 6A
VCE = 2V , IC = 500mA
VCB = 10V , f = 1.0MHz
100
70
400
DC current gain
hFE
Gain bandwidth product
fT
250
60
MHz
pF
mV
V
Output capacitance
Cob
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCE(sat) IC = 5A , IB = 250mA
VBE(sat) IC = 5A , IB = 250mA
V(BR)CBO IC = 10ìA , IE = 0
220
1
400
1.3
30
20
5
V
V(BR)CEO
V
IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
V
Turn-on time
ton
30
300
ns
Storage time
Fall time
tstg
250 1000
ns
ns
tf
15
150
hFE Classification
Rank
hFE
R
S
T
100 200
140 280
200 400
2
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2SC4308RF
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN
HITACHI
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