M6MGB331S8BKT [RENESAS]
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI; 33554432位（ 2,097,152 - 字×16位/ 4194304 - WORD 8 - BIT） CMOS FLASH MEMORY和8,388,608位（ 524,288 -字×16位/ 1048576 - WORD 8 -BI
| 型号： | M6MGB331S8BKT |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI |
| 文件： | 总3页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Renesas LSIs
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
M6MGB/T331S8BKT
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS
FLASH MEMORY &
8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM
Stacked - µ MCP (micro Multi Chip Package)
Description
The M6MGB/T331S8BKT is suitable for a high
performance cellular phone and a mobile PC that are
required to be small mounting area, weight and small
power dissipation
The M6MGB/T331S8BKT is a Stacked micro Multi Chip
Package (S- mMCP) that contents 32M-bit Flash memory
and 8M-bit Static RAM in a 52-pin TSOP for lead free use.
32M-bit Flash memory is a 4,194,304 bytes / 2,097,152
words, , single power supply and high performance non-
volatile memory fabricated by CMOS technology for the
peripheral circuit and DINOR (Divided bit-line NOR IV)
architecture for the memory cell. All memory blocks are
locked and can not be programmed or erased, when F-WP#
is low. Using Software Lock Release function, program or
erase operation can be executed.
Features
Access Time
Flash
70ns (Max.)
SRAM
85ns (Max.)
Supply Voltage
VCC=2.7 ~ 3.0V
Ta=-40 ~ 85 °C
52pin TSOP(Type-II),
Ambient Temperature
Package
8M-bit SRAM is a 1,048,576 bytes / 524,288 words
asynchronous SRAM fabricated by CMOS technology for the
peripheral circuit .
Lead pitch 0.4mm
Outer-lead finishing:Sn-Cu
Application
Mobile communication products
PIN CONFIGURATION (TOP VIEW)
A15
A14
A13
A12
A11
A10
A9
A16
1
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
BYTE#
S-UB#
GND
2
3
4
S-LB#
5
DQ15/A-1
DQ7
6
7
A8
DQ14
DQ6
8
A19
9
S-CE1#
WE#
F-RP#
F-WP#
S-VCC
S-CE2
DU
DQ13
DQ5
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
DQ12
DQ4
M6MGB/T331S8BKT
F-VCC
DQ11
DQ3
DQ10
DQ2
A20
A18
A17
DQ9
A7
DQ1
DQ8
A6
A5
DQ0
A4
OE#
A3
GND
F-CE#
A0
A2
Outline
A1
52PTJ-A
10.49 mm
F-VCC
S-VCC
GND
A-1 - A18
A19 - A20
:Vcc for Flash
:Vcc for SRAM
:GND for Flash/SRAM
:Flash/SRAM common Address
:Address for Flash
F-WP#
F-RP#
BYTE#
S-LB#
S-UB#
DU
:Flash Write protect
:Flash Reset Power Down
:Flash/SRAM Byte Enable
:SRAM Lower Byte
:SRAM Upper Byte
:Do not use
DQ0 - DQ15 :Data I/O
F-CE#
S-CE1#
S-CE2
OE#
:Flash Chip Enable
:SRAM Chip Enable1
:SRAM Chip Enable2
:Flash/SRAM Output Enable
:Flash/SRAM Write Enable
WE#
1
Rev.0.1.48a_bebz
Renesas LSIs
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
M6MGB/T331S8BKT
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS
FLASH MEMORY &
8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM
Stacked - µ MCP (micro Multi Chip Package)
MCP Block Diagram
F-Vcc
GND
1) 2)
A0 to A20
1) 2)
A0 to A20
F-CE#
F-WP#
F-RP#
BYTE#
32Mbit DINOR(IV)
Flash Memory
1)
S-Vcc
DQ0 to DQ15
1)
A0 to A18
WE#
8Mbit
SRAM
OE#
S-UB#
S-LB#
S-CE1#
S-CE2
Note 1): In case of x8 organization, A-1 is added, and only Lower Byte data(DQ0 to DQ7) are assigned to I/O and
Upper Byte data(DQ8 to DQ15) are High-Z.
Note 2): In the data sheet there are “VCC”s which mean “F-VCC” or "S-VCC". In the SRAM part there are “UB#” and
“LB#” which mean “S-UB#” and “S-LB#”, respectively.
Note 3): “DU(Don’t Use)” pin must be OPEN ,otherwise be inputted within 0V ~ Vcc.
Capacitance
Limits
Typ.
Symbol
CIN
Parameter
Conditions
Unit
pF
Min.
Max.
18
Input
A20-A0, OE#, WE#, F-CE#, F-WP#, F-RP#,
capacitance S-CE1#, S-CE2, BYTE#, S-LB#, S-UB#
Ta=25 °C,
f=1MHz,
Vin=Vout=0V
Output
COUT
DQ15-DQ0
Capacitance
22
pF
2
Rev.0.1.48a_bebz
Renesa LSIs
M6MGB/T331S8BKT
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS
3.0V-ONLY FLASH MEMORY &
8,388,608-BIT (524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT) CMOS SRAM
Stacked - µ MCP (micro Multi Chip Package)
Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan
Keep safety first in your circuit designs!
·
Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable
material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
·
·
·
These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual
property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.
Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by
Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology
Corporation product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com).
When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision
on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.
Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology
Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular,
medical, aerospace, nuclear, or undersea repeater use.
·
·
·
·
The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials.
If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved
destination.
·
·
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
REJ03C0217
© 2003 Renesas Technology Corp.
New publication, effective April 2003.
Specifications subject to change without notice
相关型号：
M6MGD137W34DWG
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
RENESAS
M6MGD13TW34DWG
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
RENESAS
©2020 ICPDF网 联系我们和版权申明