M6MGB64BM34CWG [RENESAS]
M6MGB64BM34CWG;型号: | M6MGB64BM34CWG |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | M6MGB64BM34CWG |
文件: | 总3页 (文件大小:56K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Renesas LSIs
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
M6MGB/T64BM34CWG
67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
&
Stacked-CSP ( Chip Scale Package)
Description
The M6MGB/T64BM34CWG is a Stacked Chip Scale
Package (S-CSP) that contents 64M-bit Flash memory and
32M-bit Mobile RAM in a 67-pin Stacked CSP for lead free use.
The M6MGB/T64BM34CWG is suitable for a high
performance cellular phone and a mobile PC that are
required to be small mounting area, weight and small power
dissipation.
64M-bit Flash memory is a 4,194,304 words, single power
supply and high performance non-volatile memory fabricated
by CMOS technology for the peripheral circuit and DINOR IV
(Divided bit-line NOR IV) architecture for the memory cell. All
memory blocks are locked and can not be programmed or
erased, when F-WP# is Low. Using Software Lock Release
function, program or erase operation can be executed.
Features
Access Time
Flash
85ns (Max.)
85ns (Max.)
Mobile RAM
Supply Voltage
F-VCC=M-VCC=2.7 ~ 3.0V
Ta=-40 ~ 85 degree
67pin S-CSP
Ambient Temperature
Package
32M-bit Mobile RAM is a 2,097,152 words high density RAM
fabricated by CMOS technology for the peripheral circuit and
DRAM cell for the memory array. The interface is compatible
to an asynchronous SRAM.
Ball pitch 0.80mm
Outer-ball:Su-Ag-Cu
The cells are automatically refreshed and the refresh control is
not required for system. The device also has the partial block
refresh scheme and the power down mode by writing the
command.
Application
Mobile communication products
PIN CONFIGURATION (TOP VIEW)
INDEX(Laser Marking)
8
4
5
6
7
1
2
3
NC
NC
A
NC
NC
NC
B
C
D
E
F
M-
GND
F-
M-
F-
A16 A20
A18
A17
A7
LB#
WP#
WE#
F-
RY/BY#
M-
UB#
F-
RP#
A8
A11
A15
A14
A13
A12
A5
A4
NC
M-
OE#
A21 A10
A9
A19
DQ11
A0
A6
F-
CE#
DQ13 DQ15
M-
DQ9
DQ8
DQ0
DQ12
NC
A3
A2
G
H
J
F-
GND
DQ10
DQ2
DQ6
WE#
F-
OE#
F-
GND
M-
VCC
DQ4
DQ5
DQ14
DQ7
A1
M-
CE#
F-
VCC
DQ1
DQ3
NC
NC
NC
NC
K
L
NC
NC
M
(Top View)
8.5 mm
F-VCC
M-VCC
F-GND
M-GND
A0-A20
A21
DQ0-DQ15 :Data I/O
F-CE#
M-CE#
:VCC for Flash Memory
:VCC for Mobile RAM
:GND for Flash Memory
:GND for Mobile RAM
:Common address for Flash/Mobile RAM
:address for Flash
F-RY/BY# : Flash Memory Ready /Busy
F-OE#
M-OE#
F-WE#
M-WE#
F-WP#
F-RP#
M-LB#
M-UB#
:Output enable for Flash Memory
:Output enable for Mobile RAM
:Write enable for Flash Memory
:Write enable for Mobile RAM
:Write protect for Flash
:Reset power down for Flash
:Lower byte control for Mobile RAM
:Upper byte control for Mobile RAM
:Flash chip enable
:Mobile RAM chip enable
NC
: Non Connection
Rev.0.0.48a_bbzb
1
Renesas LSIs
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
M6MGB/T64BM34CWG
67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
&
Stacked-CSP ( Chip Scale Package)
MCP Block Diagram
F-Vcc
F-GND
A0 to A21
A0 to A21
F-RY/BY#
F-CE#
F-WP#
F-RP#
F-WE#
F-OE#
64Mbit DINOR IV
Flash Memory
M-GND
M-Vcc
DQ0 to DQ15
A0 to A20
M-WE#
M-OE#
M-UB#
M-LB#
M-CE#
32Mbit
Mobile RAM
Note: In the data sheet there are “VCC”s , “GND”s , “OE”s and “WE”s.
In the Flash Memory part they mean F-Vcc, F-GND, F-OE# and F-WE#.
In the Mobile RAM part they mean M-Vcc, M-GND, M-OE# and M-WE#.
In the Mobile RAM part UB# and LB# are M-UB# and M-LB#, respectively.
Capacitance
Limits
Typ.
Symbol
Parameter
Conditions
Unit
Min.
Max.
18
Input
capacitance
Output
A21-A0, F-OE#, F-WE#, F-CE#, F-WP#, F-
RP#, M-CE#, M-OE#, M-WE#, M-LB#, M-UB#
CIN
pF
pF
Ta=25°C, f=1MHz,
Vin=Vout=0V
COUT
DQ15-DQ0, F-RY/BY#
22
Capacitance
Rev.0.0.48a_bbzb
2
Renesas LSIs
Preliminary
Notice: This is not a final specification.
Some parametric limits are subject to change.
M6MGB/T64BM34CWG
67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
&
Stacked-CSP ( Chip Scale Package)
Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan
Keep safety first in your circuit designs!
·
Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable
material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
·
·
·
These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual
property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.
Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by
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Corporation product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com).
When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision
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Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology
Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular,
medical, aerospace, nuclear, or undersea repeater use.
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The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials.
If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved
destination.
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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
REJ03C0035
© 2003 Renesas Technology Corp.
New publication, effective April 2003.
Rev.0.0.48a_bbzb
47
Specifications subject to change without notice
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