M6MGB641S8AKT [RENESAS]

M6MGB641S8AKT;


型号：	M6MGB641S8AKT
厂家：	RENESAS TECHNOLOGY CORP
描述：	M6MGB641S8AKT
文件：	总3页 (文件大小：115K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Renesas LSIs

M6MGB/T641S8AKT

67,108,864-BIT (4,194,304-WORD BY 16-BIT / 8,388,608-WORD BY 8-BIT) CMOS

FLASH MEMORY &

8,388,608-BIT (524,288-WORD BY 16-BIT / 1,048,576-WORD BY 8BIT) CMOS SRAM

Stacked- mMCP (micro Multi Chip Package)

DESCRIPTION

The M6MGB/T641S8AKT is a Stacked micro Multi Chip

Package (S- m MCP) that contents 64M-bit Flash memory

and 8M-bit Static RAM and are available in a 52-pin TSOP

for lead free use.

The M6MGB/T641S8AKT is suitable for a high performance

cellular phone and a mobile PC that are required to be small

mounting area, weight and small power dissipation.

FEATURES

64M-bit Flash memory is a 4,194,304 words / 8,388,608

bytes single power supply and high performance non-

volatile memory fabricated by CMOS technology for the

peripheral circuit and DINOR IV (Divided bit-line NOR IV)

architecture for the memory cell. All memory blocks are

Access time

Flash

SRAM

70ns (Max.)

85ns (Max.)

Supply voltage

VCC = 2.7 ~ 3.0V

locked and can not be programmed or erased, when F-WP# Ambient temperature

is Low. Using Software Lock Release function, program or

erase operation can be executed.

Ta=-40 ~ 85 °C

Package

52pin TSOP(Type-II), Lead pitch 0.4mm

Outer-lead finishing : Sn-Cu

8M-bit SRAM is a 524,288 words / 1,048576 bytes

asynchronous SRAM fabricated by CMOS technology for

the peripheral circuit and CMOS type transistor for the

memory cell.

APPLICATION

Mobile communication products

PIN CONFIGURATION (TOP VIEW)

A15

A14

A13

A12

A11

A10

A16

BYTE#

S-UB#

GND

S-LB#

DQ15/A-1

DQ7

DQ14

DQ6

A19

DQ13

DQ5

S-CE1#

WE#

F-RP#

F-WP#

S-VCC

S-CE2

A21

DQ12

DQ4

M6MGB/T641S8AKT

F-VCC

DQ11

DQ3

DQ10

DQ2

A20

A18

DQ9

A17

DQ1

DQ8

DQ0

OE#

GND

F-CE#

10.49 mm

Outline 52PTJ-A

F-VCC

S-VCC

GND

A-1-A18

A19-A21

DQ0-DQ15

F-CE#

S-CE#,S-CE2

OE#

:Vcc for Flash

:Vcc for SRAM

WE#

:Flash/SRAM Write Enable

:Flash Write Protect

:Flash Reset Power Down

:Flash/SRAM Byte Enable

:SRAM Lower Byte

F-WP#

F-RP#

BYTE#

S-LB#

S-UB#

:GND for Flash/SRAM

:Flash/SRAM common Address

:Address for Flash

:Data I/O

:Flash Chip Enable

:SRAM Chip Enable

:Flash/SRAM Output Enable

:SRAM Upper Byte

Rev.1.0_48a_bebz

Renesas LSIs

M6MGB/T641S8AKT

67,108,864-BIT (4,194,304-WORD BY 16-BIT / 8,388,608-WORD BY 8-BIT) CMOS

FLASH MEMORY &

8,388,608-BIT (524,288-WORD BY 16-BIT / 1,048,576-WORD BY 8BIT) CMOS SRAM

Stacked-

MCP (micro Multi Chip Package)

MCP Block Diagram

F-Vcc

GND

A0 to A21

F-CE#

F-WP#

F-RP#

BYTE#

64Mbit DINOR

Flash Memory

S-Vcc

DQ0 to DQ15

A0 to A18

WE#

8Mbit

SRAM

OE#

S-UB#

S-LB#

S-CE1#

S-CE2

Note 1): In case of x8 organization, A-1 is added, and only Lower Byte data(DQ0 to DQ7) are assigned to I/O and

Upper Byte data(DQ8 to DQ15) are High-Z.

Note 2): In the data sheet there are “VCC”s which mean “F-VCC” or "S-VCC". In the SRAM part there are “UB#” and

“LB#” which mean “S-UB#” and “S-UB#”, respectively.

Capacitance

Limits

Typ.

Symbol

Parameter

Conditions

Unit

Min.

Max.

Input

capacitance

CIN

Ta=25°C,

f=1MHz,

Vin=Vout=0V

A21-A0, OE#, WE#, F-CE#, BYTE#, F-RP#,

F-WP#, S-CE1#, S-CE2, S-UB#, S-LB#

Output

Capacitance

COUT

DQ15-DQ0

Rev.1.0_48a_bebz

Renesas LSIs

M6MGB/T641S8AKT

67,108,864-BIT (4,194,304-WORD BY 16-BIT / 8,388,608-WORD BY 8-BIT) CMOS

FLASH MEMORY &

8,388,608-BIT (524,288-WORD BY 16-BIT / 1,048,576-WORD BY 8BIT) CMOS SRAM

Stacked- mMCP (micro Multi Chip Package)

Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan

Keep safety first in your circuit designs!

Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to

personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable

material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual

property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.

Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application

examples contained in these materials.

All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by

Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology

Corporation product distributor for the latest product information before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com).

When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision

on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.

Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology

Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular,

medical, aerospace, nuclear, or undersea repeater use.

The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials.

If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved

destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.

REJ03C0052

New publication, effective April 2003.

Rev.1.0_48a_bebz

Specifications subject to change without notice

M6MGB641S8AKT [RENESAS]

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