M6MGB647M17AKT [RENESAS]

M6MGB647M17AKT;


型号：	M6MGB647M17AKT
厂家：	RENESAS TECHNOLOGY CORP
描述：	M6MGB647M17AKT
文件：	总3页 (文件大小：51K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Renesas LSIs

Preliminary

Notice: This is not a final specification.

Some parametric limits are subject to change.

M6MGB/T647M17AKT

67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY

16,777,216-BIT (1,048,576-WORD BY 16-BIT) CMOS MOBILE RAM

Stacked-uMCP (micro Multi Chip Package)

Description

The M6MGB/T647M17AKT is suitable for a high

The M6MGB/T647M17AKT is a Stacked micro Multi Chip

Package (S-uMCP) that contents 64M-bit Flash memory and performance cellular phone and a mobile PC that are

16M-bit Mobile RAM in a 52-pin TSOP.

required to be small mounting area, weight and small power

dissipation.

64M-bit Flash memory is a 4,194,304 words, single power

supply and high performance non-volatile memory fabricated

by CMOS technology for the peripheral circuit and DINOR IV

(Divided bit-line NOR IV) architecture for the memory cell. All

memory blocks are locked and can not be programmed or

erased, when F-WP# is Low. Using Software Lock Release

function, program or erase operation can be executed.

Features

Access Time

Flash

85ns (Max.)

Mobile RAM

85ns (Max.)

Supply Voltage

FM-VCC=2.7 ~ 3.0V

Ta=-20 ~ 85 degree

52pin TSOP(Type-II),

Lead pitch 0.4mm

Ambient Temperature

Package

16M-bit Mobile RAM is a 1,048,576 words high density RAM

fabricated by CMOS technology for the peripheral circuit and

DRAM cell for the memory array. The interface is compatible

to an asynchronous SRAM.

The cells are automatically refreshed and the refresh control

is not required for system. The device also has the partial

block refresh scheme and the power down mode by writing

the command.

Application

Mobile communication products

PIN CONFIGURATION (TOP VIEW)

A15

A14

A13

A12

A11

A10

A16

M-CE#

M-UB#

GND

M-LB#

DQ15

DQ7

DQ14

DQ6

A19

DQ13

DQ5

WE#

F-RP#

F-WP#

DQ12

DQ4

FM-VCC

DQ11

DQ3

A21

A20

A18

A17

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

GND

F-CE#

Outline

52PTJ-A

10.49 mm

FM-VCC :Common VCC for Flash/Mobile RAM

OE#

:Output enable for Flash/Mobile RAM

GND

A0-A19

:Common GND for Flash/Mobile RAM

:Common address for Flash/Mobile RAM

WE# :Write enable for Flash/Mobile RAM

F-WP# :Write protect for Flash

A20,A21 :Common address for Flash

DQ0-DQ15 :Data I/O

F-RP# :Reset power down for Flash

M-LB# :Lower byte control for Mobile RAM

M-UB# :Upper byte control for Mobile RAM

F-CE#

M-CE#

:Flash chip enable

:Mobile RAM chip enable

Rev.1.0_48a_abzb

Renesas LSIs

Preliminary

Notice: This is not a final specification.

Some parametric limits are subject to change.

M6MGB/T647M17AKT

67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY

16,777,216-BIT (1,048,576-WORD BY 16-BIT) CMOS MOBILE RAM

Stacked-uMCP (micro Multi Chip Package)

MCP Block Diagram

FM-Vcc

GND

A0 to A21

F-CE#

F-WP#

F-RP#

64Mbit DINOR IV

Flash Memory

DQ0 to DQ15

A0 to A19

WE#

16Mbit

Mobile RAM

OE#

M-UB#

M-LB#

M-CE#

Note: In the data sheet there are “VCC”s and they means FM-VCC(the common power supply for Flash and Mobile

RAM). In the Mobile RAM part UB# and LB# are M-UB# and M-LB#, respectively.

Capacitance

Limits

Test Conditions

Parameter

Symbol

Unit

Min.

Typ.

Max.

A21-A0, OE#, WE#, F-CE#, M-CE#, F-WP#,

F-RP#, M-LB#, M-UB#

Input

capacitance

Ta = 25 degree,

f = 1MHz,

CIN

Output

capacitance

COUT

Vin = Vout = 0V

DQ15-DQ0

Rev.1.0_48a_abzb

Renesas LSIs

Preliminary

Notice: This is not a final specification.

Some parametric limits are subject to change.

M6MGB/T647M17AKT

67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY

16,777,216-BIT (1,048,576-WORD BY 16-BIT) CMOS MOBILE RAM

Stacked-uMCP (micro Multi Chip Package)

Nippon Bldg.,6-2,Otemachi 2-chome, Chiyoda-ku,Tokyo,100-0004 Japan

Keep safety first in your circuit designs!

Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is alwaysthe possibility that trouble may occur with them. Trouble with semiconductors may lead to

personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable

material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

These materials are intended as a reference to assist our customers in the selection of theRenesasTechnology Corporation product best suited to the customer's application; they do not convey any license under any intellectual

property rights, or any other rights, belonging toRenesasTechnology Corporation or a third party.

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All information contained in these materials, including productdata, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by

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Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.

Please also pay attention to information published byRenesas Technology Corporation by various means, including theRenesasTechnology Corporation Semiconductor home page (http://www.renesas.com).

When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a totalsystem before making a final decision

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Pleasecontact Renesas Technology Corporation for further details on these materials or the products contained therein.

REJ03C0010

New publication, effective Aprol 2003.

Specifications subject to change without notice

M6MGB647M17AKT [RENESAS]

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